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Positive resist composition and base material carrying layer of the positive resist composition

a technology of positive resist and composition, which is applied in the direction of photosensitive materials, electrical appliances, instruments, etc., can solve the problems of poor film-forming properties of resist composition, decreased dry etching resistance, and insatiable results

Inactive Publication Date: 2004-08-05
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a positive resist composition that can be used in processes using F.sub.2 excimer laser and other light sources having wavelengths equal to or shorter than that of KrF excimer laser. The composition includes an alkali-soluble polysiloxane resin, an acid generator, and a compound in which at least one hydrogen atom of a phenolic hydroxy group or carboxyl group is substituted with an acid-decomposable group. The composition has high definition and can form resist patterns with good sectional shapes. The technical effect of the invention is to provide a positive resist composition that can meet the requirements of advanced semiconductor devices with smaller design rules.

Problems solved by technology

However, such binary system positive resists comprising polyhydroxybenzylsilsesquioxane having an acid-unstable group in combination with an acid generator are not satisfactory in definition and resist pattern shape and should be improved.
If the weight average molecular weight is less than 1000, the resulting resist composition is poor in film-forming property and has decreased dry etching resistance.
If the content of Ingredient (A) is less than 3% by weight, the resulting resist composition is poor in film-forming property and has decreased dry etching resistance.
In contrast, if it exceeds 10% by weight, the film of the resist composition cannot significantly have a desired thickness.
In contrast, if it exceeds 20 parts by weight, the resist composition cannot be significantly homogenous and has deteriorated storage stability.
However, in exposed portions, the acid-decomposable group is decomposed by catalytic reaction of an acid generated from the acid generator (B), and these compounds become alkali-soluble.
If the substitution ratio is less than 50%, the resulting resist composition exhibits low contrast and cannot form satisfactory resist patterns.
If the proportion of Ingredient (C) is less than 1 part by weight, the resulting resist composition exhibits low contrast and cannot form satisfactory resist patterns.
In contrast, if it exceeds 50 parts by weight, the resist composition exhibits insufficient dry etching resistance.

Method used

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  • Positive resist composition and base material carrying layer of the positive resist composition
  • Positive resist composition and base material carrying layer of the positive resist composition
  • Positive resist composition and base material carrying layer of the positive resist composition

Examples

Experimental program
Comparison scheme
Effect test

preparation example

[0094] Ingredient (A) for use in the present invention was prepared according to the method described in Japanese Patent No. 2567984.

[0095] In a 500-ml three-neck flask equipped with a stirrer, reflux condenser, dropping funnel and thermometer, 84.0 g (1.0 mol) of sodium hydrogencarbonate and 400 ml of water were placed, and to this mixture, a mixture of 51.1 g (0.20 mol) of p-methoxybenzyltrichlorosilane, 16.9 g (0.08 mol) of phenyltrichlorosilane and 100 ml of diethyl ether was added dropwise from the dropping funnel over 2 hours, followed by aging for 1 hour. After the completion of reaction, the reaction mixture was extracted with ether, and ether was removed by distillation under a reduced pressure, and 0.2 g of a 10% by weight potassium hydroxide solution was added to the resulting hydrolysate, followed by aging at 200.degree. C. for 2 hours, to thereby yield a copoly(pmethoxybenzylsilse-squioxane / phenylsilsesquioxane). The above-prepared copolymer was dissolved in 150 ml of a...

example 1

[0097] Ingredient (A): the resin obtained in Preparation Example (a copoly(p-hydroxybenzyl / phenyl-silsesquioxane) comprising a p-hydroxybenzylsilsesquioxane unit and a phenylsilsesquioxane unit in a molar ratio of 70:30 and having a weight average molecular weight of 7500)

[0098] Ingredient (B): triphenylsulfonium trifluoromethanesulfonate

[0099] Ingredient (C): the following compound (C-5) 10

[0100] Additional Ingredient: triethanolamine

[0101] In 1660 parts by weight of propylene glycol monomethyl ether monoacetate, 100 parts by weight of Ingredient (A), 3 parts by weight of Ingredient (B), 30 parts by weight of Ingredient (C) and 0.3 part by weight of the additional ingredient were dissolved, followed by filtration through a 0.1-.mu.m membrane filter, to thereby yield a coating solution of a positive resist composition.

[0102] The above-prepared coating solution of positive resist composition was applied onto a 6-inch silicon wafer by spin coating, and was dried on a hot plate at 90.d...

example 2

[0105] A solution of a positive resist composition was prepared in the same manner as in Example 1, except that 30 parts by weight of the following compound (C-9) was used instead of Ingredient (C) used in Example 1. 11

[0106] Next, a resist layer was formed and was patterned in the same manner as in Example 1, to thereby yield a 180-nm line-and-space pattern with a satisfactory, nearly rectangular sectional shape at an exposure of 20 mJ / cm.sup.2.

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Abstract

A positive resist composition includes (A) an alkali-soluble polysiloxane resin, (B) an acid generator composed of a compound which generates an acid upon irradiation of active light or radiant ray, and (C) a compound in which at least one hydrogen atom of phenolic hydroxyl group or carboxyl group is substituted with an acid-decomposable group. This positive resist composition is useful for processes using F2 excimer laser (157 nm), extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and other light sources having wavelengths equal to or shorter than that of KrF excimer laser, and has high definition and can form resist patterns with good sectional shapes. A base material carrying a layer of the positive resist composition is also useful.

Description

[0001] This is a divisional of application Ser. No. 09 / 922,723 filed Aug. 7, 2001; the disclosure of which is incorporated herein by reference.FIELD OF THE INVENTION[0002] The present invention relates to a positive resist composition and a base material carrying a resist layer composed of the positive resist composition.DESCRIPTION OF THE RELATED ART[0003] Semiconductor devices are more and more being intensified in the degree of integration in recent years. The mass production of large-scale integrated circuits (LSIs) using 0.18-.mu.m design rules had been already launched, and the mass production of LSIs using 0.15-.mu.m design rules was launched at the end of 2000.[0004] In the lithography process for such semiconductors, attempts are made to put LSIs using about 0.13-.mu.m design rules into practical use. Such attempts include the use of a chemically amplified positive or negative resist as the resist; the combination use of the chemically amplified positive or negative resist ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C08G77/50C08G77/52C08L83/06C08L83/14G03F7/075G03F7/039G03F7/11H01L21/027
CPCG03F7/0392Y10S430/115Y10S430/106G03F7/0757
Inventor OGATA, TOSHIYUKIENDO, KOUTAROKOMANO, HIROSHI
Owner TOKYO OHKA KOGYO CO LTD