Method for forming sputtering target
a technology of sputtering target and target, which is applied in the field of sputtering target, can solve the problems of difficult to secure the reliability of such a transistor, amorphous oxide semiconductor film, unstable physical properties, etc., and achieve the effect of high crystallinity
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embodiment 1
[0040]In this embodiment, a sputtering target of one embodiment of the present invention will be described.
[0041]FIG. 1 shows a method for forming a sputtering target.
[0042]First, raw materials are weighed in a step S101. As the raw materials, first to n-th (n is a natural number greater than or equal to 2) oxide powders are used. For example, an indium oxide powder, a gallium oxide powder, and a zinc oxide powder are used. Note that instead of the gallium oxide powder, a tin oxide powder, an aluminum oxide powder, a titanium oxide powder, a nickel oxide powder, a zirconium oxide powder, a lanthanum oxide powder, a cerium oxide powder, a neodymium oxide powder, a hafnium oxide powder, a tantalum oxide powder, or a tungsten oxide powder may be used. In this embodiment, the molar ratio of the indium oxide powder to the gallium oxide powder and the zinc oxide powder is 2:2:1, 8:4:3, 3:1:1, 1:1:1, 4:2:3, 1:1:2, 3:1:4, or 3:1:2. With such a molar ratio, a sputtering target including a po...
embodiment 2
[0068]In this embodiment, a sputtering target which is partly different from that in Embodiment 1 will be described.
[0069]FIG. 2 shows a method for forming a sputtering target. Note that between the method for forming a sputtering target shown in FIG. 2 and that shown in FIG. 1, there is a difference only in pressure treatment which is performed before the second baking. Thus, for steps up to and including the step S109 of drying treatment and a removal of the organic substance in FIG. 2, description in Embodiment 1 is referred to.
[0070]In a step S120, the dried molded body from which the organic substance has been removed is subjected to pressure treatment. In the pressure treatment, the molded body is preferably pressed, and for example, a weight is preferably used. Alternatively, the molded body may be pressed under high pressure using compressed air.
[0071]The pressure treatment performed on the molded body enables a crystal portion in the In—Ga—Zn oxide included in the molded bo...
embodiment 3
[0078]In this embodiment, a sputtering target which is partly different from those in Embodiment 1 and Embodiment 2 will be described.
[0079]FIG. 3 shows a method for forming a sputtering target. Note that in the method for forming a sputtering target shown in FIG. 3, second baking is performed together with pressure treatment, which is the only difference from the method shown in FIG. 1. Thus, for steps up to and including the step S109 of drying treatment and a removal of the organic substance in FIG. 3, description in Embodiment 1 is referred to.
[0080]In a step S130, the dried molded body from which the organic substance has been removed is subjected to pressure treatment and second baking treatment together. For the pressure treatment, description of the pressure treatment in Embodiment 2 is referred to. Further, for the second baking treatment, description of the second baking in Embodiment 1 is referred to. Specifically, the molded body may be baked as well as being pressed usi...
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Abstract
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