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ULTRA SMALL GRAIN-SIZE NANOCRYSTALLINE DIAMOND FILM HAVING A SiV PHOTOLUMINESCENCE AND MANUFACTURING METHOD THEREOF

a nanocrystalline diamond and nanocrystalline technology, applied in the direction of polycrystalline material growth, crystal growth process, chemically reactive gas, etc., can solve the problems of poor spatial coherence of luminescent nitrogen vacancy, low luminescent efficiency, and difficulty in producing nanocrystalline diamonds with nitrogen vacancy, etc., to achieve easy operation and reduce grain size

Inactive Publication Date: 2018-11-15
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a method to create ultra-small diamond grains with uniform particle size distribution using one device. The technique involves film growth and plasma bombardment to reduce grain size, which is important for the application of nano-diamonds in biological experiments. The small size of diamond grains (about 2-5 nm) makes them ideal for label tracing and drug delivery. The method is simple to operate and has important scientific benefits.

Problems solved by technology

Such a wide emitting range results in a low luminescent efficiency and poor spatial coherence of the luminescent nitrogen vacancy.
It is very difficult to produce nanocrystalline diamonds with nitrogen vacancy in this size.
These limit the application of nanocrystalline diamond particles with nitrogen vacancy luminescence in biological experiments.
However, nanocrystalline diamond grains with uniform grain size up to 2 nm have not yet been experimentally prepared.

Method used

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  • ULTRA SMALL GRAIN-SIZE NANOCRYSTALLINE DIAMOND FILM HAVING A SiV PHOTOLUMINESCENCE AND MANUFACTURING METHOD THEREOF
  • ULTRA SMALL GRAIN-SIZE NANOCRYSTALLINE DIAMOND FILM HAVING A SiV PHOTOLUMINESCENCE AND MANUFACTURING METHOD THEREOF
  • ULTRA SMALL GRAIN-SIZE NANOCRYSTALLINE DIAMOND FILM HAVING A SiV PHOTOLUMINESCENCE AND MANUFACTURING METHOD THEREOF

Examples

Experimental program
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Effect test

example 1

[0029]First, the single crystal silicon substrate was ultrasonically vibrated (ultrasound power 200 W) in a mixture of Ti powder (0.1 g), diamond micron powder (0.1 g) and acetone (50 mL) for 45 min, then it was put in fresh acetone and ultrasonically vibrated for 1 min. After drying, it was placed in fresh acetone again and ultrasonically vibrated for 1 min. After drying, the substrate for nanocrystalline diamond film growth was obtained. The above pre-treated single crystal silicon substrate was placed into a microwave plasma chemical vapor deposition apparatus to deposit a nanocrystalline diamond film. The microwave plasma chemical vapor deposition method used methane and argon as gas source, the methane-argon gas volume ratio was 4:196, the growth power was 1200 W, the growth pressure was 150 torr, and the growth time was 1 h. The obtained nanocrystalline diamond film had a thickness of about 1 pin and a grain size of about 10 nm. The microwave plasma chemical vapor deposition a...

example 2

[0034]First, the single crystal silicon substrate was ultrasonically vibrated (ultrasound power 200 W) in a mixture of Ti powder (0.1 g), diamond micron powder (0.1 g) and acetone (50 mL) for 45 min, then it was put in fresh acetone and ultrasonically vibrated for 1 min. After drying, it was placed in fresh acetone again and ultrasonically vibrated for 1 min. After drying, the substrate for nanocrystalline diamond film growth was obtained. The above pre-treated single crystal silicon substrate was placed into a microwave plasma chemical vapor deposition apparatus to deposit a nanocrystalline diamond film. The microwave plasma chemical vapor deposition method used methane and argon as gas source, the methane-argon gas volume ratio was 4:196, the growth power was 1200 W, the growth pressure was 150 torr, and the growth time was 1 h. The obtained nanocrystalline diamond film had a thickness of about 1 μm and a grain size of about 10 nm. The microwave plasma chemical vapor deposition ap...

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Abstract

An ultra small grain-size nanocrystalline diamond film having a SiV photoluminescence, is manufactured by the following method: (1) manufacturing, on a single crystal silicon substrate, a nanocrystalline diamond film having a SiV photoluminescence by using a microwave plasma chemical vapor deposition method; (2) performing oxygen plasma etching treatment on the nanocrystalline diamond film obtained in step (1) for 5-30 min by using an oxygen plasma bombardment method in a mixed gas plasma having an oxygen-nitrogen gas volume ratio of 1:4-6 and at an atmospheric pressure of 0.5-6 torr and a microwave power of 600-1000 W, thereby obtaining the ultra small grain-size nanocrystalline diamond film having the SiV photoluminescence.

Description

(I) TECHNICAL FIELD[0001]The invention relates to an ultra small grain-size nanocrystalline diamond film having SiV photoluminescence and their Manufacturing Method Thereof.(II) BACKGROUND ART[0002]Nanocrystalline diamond particles have excellent biocompatibility and good optical stability, and it is easy to surface-modify and surface functionalize. Such properties make nanocrystalline diamond particles particularly suitable for biological applications, including intracellular labelling and tracking, extracellular drug delivery, and the adsorptive detection of bioactive molecules. Therefore, the luminescent color center caused by defects in diamond is extremely important. Color center refers to a defect in the crystal, which is caused by point defects, point defect pairs, or point defect groups capturing electrons or holes. The color center can cause light absorption in the visible spectral region. That is, the luminescence of the color center can be achieved by excitation in a cert...

Claims

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Application Information

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IPC IPC(8): C30B29/04C30B25/10C30B25/18C30B35/00
CPCC30B29/04C30B25/105C30B25/186C30B35/007C09K11/65B33Y30/00B33Y40/00B82Y30/00B82Y40/00C23C16/274C30B25/00C23C16/56
Inventor HU, XIAOJUNCHEN, CHENGKE
Owner ZHEJIANG UNIV OF TECH