Method of fabricating group-III nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based c
A technology of nitride semiconductors and manufacturing methods, applied in semiconductor devices, semiconductor/solid-state device manufacturing, chemical instruments and methods, etc., can solve problems such as difficult control of crystal nuclei and limited crystallinity
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example 1
[0141] An example of a method of manufacturing a Group III nitride semiconductor crystal will now be described. The substrate used was a sapphire single crystal substrate having a (0001) plane. The substrate was organically cleaned with acetone and placed on a silicon carbide (SiC) holder, which was then placed in an MOCVD apparatus. RF is introduced into the heating system for temperature control in the MOCVD apparatus. Thermocouples enclosed in quartz tubes are inserted into the holder to measure the temperature increase in the device.
[0142] After the substrate was placed in the apparatus, it was heated to 1180°C in a hydrogen atmosphere and kept at this temperature for 10 minutes to remove any oxide film from the substrate surface. Then the temperature was reduced to 1100°C, and in the same hydrogen atmosphere containing no nitrogen source, the metal-organic material, trimethylaluminum (TMA), was fed to the substrate at a flow rate of 12 μmol / min for 1 minute. The TMA...
example 2
[0145] In the case of Example 1, organic cleaning and heat treatment were performed on a sapphire single crystal substrate having a (0001) plane in a growth apparatus. Then, the substrate was kept at 1180°C in a hydrogen atmosphere without a nitrogen source, TMA and TMG were applied at a flow rate of 12 μmol / min for 1 minute, and an alloy of Al and Ga was deposited on the sapphire single crystal substrate. The temperature was kept at 1180°C, TMA and TMG were closed, and ammonia (NH 3 ) for 3 minutes to nitride the Al-Ga alloy. Then, ammonia was applied and the temperature was kept at 1180°C, and a metal-organic material, trimethylgallium (TMG), was applied at a flow rate of 140 μmol / min to achieve GaN epitaxy on a substrate with Al-Ga alloy deposits. Growth 1.1 μm.
[0146] The epitaxial wafer thus produced had a mirror image surface, and the half-maximum peak width of the X-ray rocking curve of the gallium nitride epitaxial layer was 720 seconds, showing excellent crystalli...
example 3
[0154] Using the same method as in Example 1, the sapphire single crystal substrate having a (0001) plane was organically cleaned and heat-treated in a growth device. Subsequently, TMA, TMG and trimethylindium (TMI), Another metal-organic material for 30 seconds to form an alloy of Al, Ga, and In on a sapphire substrate. The supply of the metal-organic material was turned off, the temperature was kept at 1180° C., ammonia was applied at a flow rate of 0.2 mol / min for 3 minutes, and the Al / Ga / In alloy was nitrided. Then, maintaining the application of ammonia at the same flow rate and maintaining the temperature of the device at 1180 °C, TMG was applied at a flow rate of 140 μmol / min to grow GaN on the substrate with Al / Ga / In alloy by 1.1 μm.
[0155] The epitaxial wafer thus produced had a mirror image surface, and the half-maximum peak width of the X-ray rocking curve of the gallium nitride epitaxial layer was 620 seconds. This shows excellent crystallinity of the epitaxial...
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