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Thin film material for sunlight blind area ultraviolet detector and its producing method

A technology for ultraviolet detectors and thin-film materials, which is applied in semiconductor/solid-state device manufacturing, photometry, metal material coating processes, etc., can solve the problems of high cost, expensive raw materials and equipment, and complicated manufacturing process, and achieve low cost. , the effect of simple manufacturing process

Inactive Publication Date: 2007-12-26
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the thin-film materials used in solar-blind zone ultraviolet detectors are mainly aluminum-gallium-nitride (GaAIN) systems, which require thin-film preparation technologies such as metal-organic vapor deposition and molecular beam epitaxy. High, high toxicity of organic sources and other defects

Method used

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  • Thin film material for sunlight blind area ultraviolet detector and its producing method

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Embodiment 1

[0015] A kind of thin film material that sun-blind area ultraviolet detector is used, and its molecular formula is Ni 0.7 Mg 0.3 O, ie x=0.3. Adopt following process step: A) according to molecular formula Ni 0.7 Mg 0.3 Magnesium / nickel atomic ratio in O, put 2g of magnesium acetate and 5.5g of nickel acetate into a glass container, then add 100ml of chemically pure hexanediol methyl ether, then add 5ml of chemically pure glacial acetic acid, at 60°C Stir for 70 minutes, place and age for 24 hours to obtain a uniform and transparent green sol; B) apply a layer of sol on the substrate by spin coating; C) dry the substrate coated with sol at 80°C for 40 minutes , heat treatment at 500°C for 2 hours, then high temperature heat treatment at 900°C for 6 hours and then natural cooling to obtain the desired film material. When using the spin coating method to coat a layer of sol on the substrate, the rotation speed is 3000rpm, and the substrate is a quartz glass sheet. The forbi...

Embodiment 2

[0017] A kind of thin film material that sun-blind area ultraviolet detector is used, and its molecular formula is Ni 0.8 Mg 0.2 O, namely x=0.2, adopt following process step: A) according to molecular formula Ni 0.8 Mg 0.2 Magnesium / nickel atomic ratio in O, put 1g of magnesium acetate and 4.63g of nickel acetate into a glass vessel, then add 100ml of chemically pure hexanediol methyl ether, and 10ml of chemically pure glacial acetic acid, stir at 60°C for 50 minutes, placed and aged for 24 hours to obtain a uniform and transparent green sol; B) immerse the clean substrate in the sol, and coat a layer of sol on the substrate by pulling method; C) place the substrate coated with the sol on Dry at 80°C for 30 minutes, heat-treat at 500°C for 1 hour, then heat-treat at 1100°C for 2 hours and then cool naturally to obtain the desired film material. When using the pulling method to coat a layer of sol on the substrate, the pulling speed is 10 cm per minute, and the substrate is...

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Abstract

A film material used in a solar blind zone UV detector characterizes that the formula of said film material is Nil-xMgxO and said material is manufactured by the following technology steps: 1, according to the atomic ratio of Mg / Ni in the formula, Mg acetate and Ni acetate in the formula, Mg acetate and Ni acetate in the weight ratio of 1:1.27-1:4.63 are put in a container to be mixed for 50-70minutes under 60deg.C taking hexanediol methyl oxide as the solvent, glacial acetic acid as the catalyst to get a uniform transparent green sol after 24 hours digestion. 2, coating a layer of sol on the substrate with the pulling method or spin coating method, 3, drying the substrate coated with the sol under 80deg.C, heat-processing it for 1-2h under 500deg.C, then processing it under 900-1100deg.C, for 2-6h and cooling it naturally to get the necessary film material.

Description

technical field [0001] The invention relates to a thin film material, in particular to a thin film material for an ultraviolet detector in a sun-blind zone and a manufacturing method thereof. Background technique [0002] With the development of spectroscopic technology, people's focus has gradually shifted to short wavelengths, among which, the spectrum with a wavelength in the range of 240-280nm is a special area. Due to the absorption of sunlight by the atmosphere, the light in the range of 240-280nm is absorbed and cannot reach the surface of the earth. There is no light in this band in the sunlight near the surface of the earth, so this band is called the solar blind zone. Since the ultraviolet detector in the solar blind area is not sensitive to sunlight, it can detect the tail flames from enemy aircraft, missiles, etc. without being affected by sunlight, and can also be used for fire alarm, ultraviolet communication, and high-voltage lines. online testing etc. [00...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/00H01L27/14H01L21/02C23C18/00G01J1/02
Inventor 季振国何作鹏
Owner ZHEJIANG UNIV