Method for nondestructively detecting direct linkage quality of indium phosphide and gallium arsenide base material

Abstract

This invention provides a direct bonding structure quality method for lossless measurement for III-V compound semi-conductor InP and GaAs basic substance, which is the following: to distinguish the quality of interface structure area by checking whether the absorb wave appears in the wave length position; to make distribution graph of whole bonding quality uniformity according to the absorb intensity values and to provide improvement clue for the bonding apparatus and conditions; later to draw other absorb wave band ,such as working wave length intensity contour line to prescribe the light loss of the wave band of the bonding interface to provide important information for study.

Description

technical field [0001] The invention provides a method for non-destructively testing the quality of the direct bonding structure of III-V group compound semiconductor InP and GaAs-based materials, belonging to the technical field of testing semiconductor optoelectronic materials and devices. Background technique [0002] The direct bonding technique once used for Si-based materials has been widely used in the assembly of III-V materials in recent years. Compared with traditional epitaxial techniques such as MBE and MOCVD, the direct bonding process does not introduce additional line dislocations in the epitaxial layer, which is an important reason for the application of this technology in combining different material structures; however, direct bonding also It brings adverse effects, such as the bonding process introduces a large number of edge dislocation groups near the interface of heterogeneous materials, which affects the electrical and optical properties. Make its per...

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Problems solved by technology

Although infrared imaging technology has been applied in the research on the bonding mechanism of Si-based materials and the testing of related structures (T.Piotrowski and W.Jung, "Characterization of silicon wafer bonding by observation in transmitted infrared radiation from an extended source", Thin Solid Films Vol.364, 274 (2000)), but its application in the bonding structure of III-V compound semiconductor materials InP-GaAs has not been reported yet, and the direct bond between InP and GaAs-based materials is detected by infrared spectroscopy two-dimensional scanning method The quality of the composite structure is an international precedent

[0005] L. Sagalowicz, A. Rudra, E. Kapon, M. Hammar, F. Salomonsson, et al [A. Black, P.-H. Jouneau, T. Wipijewski, "Defects, structure, and chemistry of InP-GaAs interfaces obtained by wafer bonding”, J.Appl.Phys.Vol.87, 4135(2000)], using transmission electron microscopy (TEM) to conduct a detailed study of the InP-GaAs bonding structure cross section, such as interface edge dislocation groups, vacancies And the observation of the lattice structure of the material near the interface, etc. However, the transmission electron microscope can only detect the local microscopic area, and cannot be used for the characterization of the overall uniformity of the bonding structure;

[0006] Hiroshi Wada, Yoh Ogawa, and Takeshi Kamijoh, in "Electrical characteristics of directly-bonded GaAs and InP", [Appl.Phys.Lett.Vol.Vol.62, 738 (1993)], InP-GaAs bonded structure However, the preparation of the sample is inconvenient, and the bonding pressure, temperature and annealing time will all have an impact on the electrical properties of the bonded structure. , the electrical criterion has its uncertainty

[0007] Also R.J.Ram, J.J.Dudley, J.E. Bowers, L. Yang, K. Carey, S.J.Rosner, and K.Nauka et al., ["GaAs to InP wafer fusion", J.Appl.Phys.Vol.78, 4227 (1995) ] and Yoshitaka Ohiso and Chikara Amano et al., ["Thin-film wafer fusion for buried-heterostructure InP-based lasers fabricated on a GaAs substrate", J.Appl.Phys.Vol.87, 2857 (2000)], respectively using Electron beam-induced current (EBIC) and cathode ray-induced fluorescence (CL) methods are used to obtain bonding interface information, and the results obtained are more intuitive. However, these two methods are not easy to characterize large-area samples, and have high requirements for sample preparation. Requirements; such as EBIC requires that the InP epitaxial layer be transferred to the GaAs surface by a bonding method, so it is necessary to prepare an InP-based sample structure for this method, and the structure after bonding needs to be made of contact electrodes; while the CL method requires The InGaAsP layer is used as a fluorescent excitation layer, and the InP-based samples used for bonding experiments also need to prepare their specific structures

[0008] To sum up, so far there is no better method to directly and non-destructively evaluate the direct bonding quality of InP and GaAs-based materials, including the evaluation method for the direct bonding structure quality of InP and GaAs epitaxial layers

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