The invention relates to a synthesis method of
indium phosphide and a synthesis device thereof. A first container for storing
indium and a second container for storing
phosphorus in a sealed
pipe areboth placed in a
phosphorus pressure control area initially, the temperature of the
phosphorus pressure control area is greater than or equal to the
vaporization temperature of phosphorus and is lowerthan the
melting point of
indium phosphide, the temperature of the phosphorous
pressure control area is utilized to melt and preheat indium and vaporize phosphorus, and in the moving direction of thesealed
pipe, the first container is located in front of the second container; the sealed
pipe moves from the phosphorous pressure
control area to a reaction area, the temperature of the reaction areais greater than or equal to the
melting point of
indium phosphide, in the reaction area, phosphorus steam is melted into an indium melt to form an
indium phosphide melt; the sealed pipe moves from the reaction area to a polycrystal cooling area, the temperature of the polycrystal cooling area is lower than the reaction area, and the
indium phosphide melt cools into an indium
phosphide polycrystalin the polycrystal cooling area. According to the invention, the phosphorous pressure
control area is utilized to store liquid indium to effectively avoid the Si
pollution problem caused by reactionof high temperature indium with a
quartz crucible wall, and the InP polycrystal product has higher purity.