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High dielectric constant grid medium PrAlxOy film

A technology of high dielectric constant and equivalent dielectric constant, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of large dielectric constant weakening, high dielectric constant, small dielectric constant, etc., and achieve high-level Effective dielectric constant, high dielectric constant, and the effect of improving interface properties

Inactive Publication Date: 2008-12-10
SHANGHAI JIAO TONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to SiO 2 The dielectric constant is small, and it has a greater weakening effect on the dielectric constant of the pseudo-binary compound, which is not conducive to obtaining a high dielectric constant.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Example 1PrAl x o y Thin film, % by weight: Al 2 o 3 1%, the rest is Pr 2 o 3 .

[0015] Weigh the materials according to the ratio to prepare the ceramic target. Preparation of PrAl on Silicon Wafers by Electron Beam Evaporation x o y film. The back vacuum of the reaction chamber is 10 -3 Pa, the electron beam current used during evaporation is 10mA. PrAl x o y The film was subjected to rapid thermal annealing in a high-purity nitrogen atmosphere at 500°C for 3 minutes.

[0016] After various performance tests, the obtained PrAl x o y The equivalent dielectric constant of the film is 18, and PrAl x o y The frequency dependence of the CV curve of the MOS structure with the oxide layer is small, and the interface state density is similar to other high-K materials, at 10 12 / cm 2 On the order of eV, there is a transition layer at the interface, which is the coexistence area of ​​Pr, Al, Si, and O. The existence of the interface layer reduces the equival...

Embodiment 2

[0018] Example 2PrAl x o y The film weight percentage is: Al 2 o3 10%, the rest is Pr 2 o 3 .

[0019] Weigh the materials according to the ratio to prepare the ceramic target. Preparation of PrAl on Silicon Wafers by Electron Beam Evaporation x o y film. The back vacuum of the reaction chamber is 10 -3 Pa, the electron beam current used during evaporation is 10mA. PrAl x o y The film was subjected to rapid thermal annealing in a high-purity nitrogen atmosphere at 500°C for 3 minutes.

[0020] After various performance tests, the obtained PrAl x o y The equivalent dielectric constant of the film is 20, and PrAl x o y The frequency dependence of the CV curve of the MOS structure with the oxide layer is small, and the interface state density is similar to other high-K materials, at 10 12 / cm 2 ·eV level, the transition layer at the interface is very thin, and it is a region where Pr, Al, Si, and O coexist. The reduction of interfacial layer thickness promotes t...

Embodiment 3

[0022] Example 3PrAl x o y The film weight percentage is: Al 2 o 3 12% and the rest in Pr 2 o 3 .

[0023] Weigh the materials according to the ratio to prepare the ceramic target. Preparation of PrAl on Silicon Wafers by Electron Beam Evaporation x o y film. The back vacuum of the reaction chamber is 10 -3 Pa, the electron beam current used during evaporation is 10mA. PrAl x o y The film was subjected to rapid thermal annealing in a high-purity nitrogen atmosphere at 500°C for 3 minutes.

[0024] After various performance tests, the obtained PrAl x o y The equivalent dielectric constant of the film is 25, and PrAl x o y The frequency dependence of the CV curve of the MOS structure with the oxide layer is small, and the interface state density is similar to other high-K materials, at 10 12 / cm 2 ·eV level, the transition layer at the interface is very thin, and it is a region where Pr, Al, Si, and O coexist. The reduction of interfacial layer thickness prom...

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PUM

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Abstract

A high dielectric constant gate dielectric binary compound oxide PrAlxOy film in the field of material technology, which contains components and weight percentages: Al2O3 1% to 24%, and the rest is Pr2O3. When the weight percentage of Al2O3 is 12%, the interface layer between PrAlxOy and silicon is the thinnest, and the equivalent dielectric constant is 25. The PrAlxOy film obtained by the invention is an amorphous film, which remains amorphous after being rapidly heat-treated at 800 DEG C for 5 minutes, has a high crystallization temperature, and has good interface stability with the silicon wafer. PrAlxOy films have the properties of high dielectric constant and low leakage current, and can be used not only as gate dielectric materials in MOSFET structures, but also as insulating layers in MIM structures in radio frequency circuits and mixed-signal integrated circuits.

Description

technical field [0001] The invention relates to a thin film in the field of material technology, in particular to a high dielectric constant gate dielectric binary composite oxide PrAl x o y film. Background technique [0002] In recent years, microelectronics technology with silicon integrated circuits as the core has achieved rapid development. The development of integrated circuit chips basically follows Moore's law, that is, the integration level of semiconductor chips doubles every 18 months. But size reduction is ultimately constrained by technology and the laws of physics. According to the "International Semiconductor Technology Development Plan" formulated by the US Semiconductor Industry Association SIA in 1999, by 2014, the gate length will be reduced to 0.022μm, and the corresponding equivalent oxide thickness should reach 3-6 . As the feature size of the device continues to shrink, when the line width is less than 0.1 μm, the thickness of the gate oxide laye...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/51H01L29/78H01L29/739
Inventor 凌惠琴陈寿面李明毛大立杨春生
Owner SHANGHAI JIAO TONG UNIV
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