Multiple layer modulation-doped ZnO-MgZnO transparent conductive oxide thin film
An oxide film, modulation doping technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as impurity ion scattering
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Embodiment 1
[0019] By radio frequency sputtering:
[0020] A co-sputtering device is used, and three sputtering sources are set on the device to sputter metal Zn target (99.99%), metal Al target (99.99%) and (or) 99.999% Mg-Zn alloy target or Mg x Zn 1-x O ceramic target, wherein the composition of Mg in the Mg-Zn alloy target can be changed, Mg x Zn 1-x The O ceramic target is made by mixing ZnO powder (99.999%) and MgO powder (99.999%) according to the Mg content of 10% to 33%, after grinding, forging and sintering. The material sputtered from 1 to 2 targets collects on the substrate surface. Using different substrate materials S (glass, sapphire), the substrate S needs to be pre-sputtered and cleaned before film formation. During sputtering, the substrate S is rotated and heated (adjustable from room temperature to 700°C). Ar and O 2 Introduced through a special ventilation tube, and then controlled and adjusted the following conditions and parameters:
[0021] Target diameter φ6...
Embodiment 2
[0030] Molecular Beam Epitaxy:
[0031] The molecular beam epitaxy (MBE) system consists of a Knudson chamber and a radio frequency plasma chamber. Install Zn(7N), Mg(4N), Al(4N) in the Knudson chamber, and the radio frequency plasma chamber is equipped with O 2 (5N), the background vacuum in the MBE growth chamber was 5×10 -8 pa, the working air pressure is 8×10 -5 pa, Zn, Mg, Al molecular beam current is equivalent to 2×10 -4 pa, 2×10 -6 ~1×10 -5 pa, the substrate S is treated before deposition, such as a sapphire substrate, first heat treatment at 750°C for 10 minutes, then plasma radiation at 500°C for 10 minutes, and then deposit ZnO buffer layer B1 (10-20nm at 570°C ), the oxygen flow rate is 0.9sccm, and the Zn molecular beam current is equivalent to (BEP)3×10 -6 Torr, the growth rate of ZnO is controlled by the oxygen flux. At the same temperature, under the same Zn molecular beam flow, by changing the Mg molecular beam (equivalent to 1×10 -8 ~7×10 -8 Torr) an...
Embodiment 3
[0033] Pulse laser deposition method: KrF excimer laser as excitation source, repetition frequency 1Hz, distance between target and substrate S 4cm, laser pulse energy density 1~3J / cm 2 , the background air pressure of the growth chamber is 10 -4 Pa, laser irradiation ZnO target (99.999%) to grow ZnO buffer layer B1 (10~20nm), temperature about 400°C, oxygen pressure 2Pa, then laser irradiation Mg x Zn 1-x O: Al target growth Mg x Zn 1-x O: Al thin film D (2-6nm), temperature about 500°C, oxygen pressure 5-15Pa, and then ablate Mg x Zn 1-x Deposition of Mg on O ceramic target x Zn 1-x O B (1 ~ 3nm), the conditions are the same as the doping, and finally ablate the ZnO ceramic target ZnO:O v Thin film M (2-6nm), the temperature is about 400°C, and the oxygen pressure is 1Pa. In this way, one cycle of preparation of the transparent conductive oxide is completed. By repeating the above steps 20-160 times, the doped ZnO-MgZnO transparent conductive oxide thin film can be ...
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