Unlock instant, AI-driven research and patent intelligence for your innovation.

A GaN base LED P type transparent conductive film and its making method

A technology of transparent conductive film and light-emitting diodes, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of increased sheet resistance and decreased transmittance, and achieve the goals of lower working voltage, high light transmittance, and extended service life Effect

Inactive Publication Date: 2009-09-16
ZHEJIANG INVENLUX TECH
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to increase the transmittance of the metal film in the visible light region, it must be made into an extremely thin film. However, when the metal film is quite thin (about 100 Angstroms), it is easy to form an island-shaped discontinuous film that increases the sheet resistance. When the island-shaped film is further enlarged, the transmittance will also be reduced due to the scattering effect, and the light transmittance of nickel and gold alloy metal films is only 65%-75%

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A GaN base LED P type transparent conductive film and its making method
  • A GaN base LED P type transparent conductive film and its making method
  • A GaN base LED P type transparent conductive film and its making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Please refer to figure 1 , the preparation method of the GaN-based light-emitting diode P-type layer transparent conductive film according to the present invention generally includes the following steps:

[0031] (1) Utilize metal-organic chemical vapor deposition (MOCVD) equipment to obtain N-type GaN layer 12, active light-emitting layer 13, and P-type GaN layer 14 on the sapphire substrate 11 by sequential epitaxial growth, such as image 3 as shown,

[0032] (2) Etch a step exposing the N-type GaN layer 12 by inductively coupled plasma dry etching, such as Figure 4 as shown,

[0033] (3) At a vacuum degree of 9.99×10 -7 Under the condition of Torr, utilize E / B & Thermal (electron beam vapor deposition machine) to evaporate the nickel 15 of 5 angstroms on the p-type GaN layer 14, as Figure 5 as shown,

[0034] (4) in the alloy furnace that feeds 1sccm oxygen and 4sccm nitrogen, temperature is under the condition of 400 ℃, the wafer that is vapor-deposited with...

Embodiment 2

[0039] The method for manufacturing the P-type layer transparent conductive film of gallium nitride-based light-emitting diodes according to the present invention generally includes the following steps:

[0040] (1) Using MOCVD equipment to sequentially grow epitaxially on the sapphire substrate 11 to obtain an N-type GaN layer 12, an active light-emitting layer 13, and a P-type GaN layer 14,

[0041] (2) Etching a step exposing the N-type GaN layer 12 by inductively coupled plasma dry etching,

[0042] (3) At a vacuum degree of 9.99×10 -7 Under the condition of Torr, use E / B & Thermal to vapor-deposit 10 angstroms of nickel 15 on the p-type GaN layer 14,

[0043] (4) in the alloy furnace that passes into 2sccm oxygen and 8sccm nitrogen, temperature is under the condition of 450 ℃, carry out the heat treatment of 15min to the wafer that is vapor-deposited with nickel 15,

[0044] (5) At a vacuum degree of 9.99×10 -7 Under the condition of Torr, use the ITO vapor deposition ...

Embodiment 3

[0048] The method for manufacturing the P-type layer transparent conductive film of gallium nitride-based light-emitting diodes according to the present invention generally includes the following steps:

[0049] (1) Using MOCVD equipment to sequentially grow epitaxially on the sapphire substrate 11 to obtain an N-type GaN layer 12, an active light-emitting layer 13, and a P-type GaN layer 14,

[0050] (2) Etching a step exposing the N-type GaN layer 12 by inductively coupled plasma dry etching,

[0051] (3) At a vacuum degree of 9.99×10 -7 Under the condition of Torr, use E / B & Thermal to vapor-deposit 12 angstroms of nickel 15 on the p-type GaN layer 14,

[0052] (4) in the alloy furnace that passes into 3sccm oxygen and 12sccm nitrogen, temperature is under the condition of 475 ℃, carry out the thermal treatment of 15min to the wafer that vapor-deposits nickel 15,

[0053] (5) At a vacuum degree of 9.99×10 -7 Under the condition of Torr, use the ITO vapor deposition machi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a P-type layer transparent conductive film of a gallium nitride-based light-emitting diode and a manufacturing method thereof. The transparent conductive film is made of a combination of Ni / ITO, Al / ITO or NiO / ITO, and the thickness of aluminum 5-30 angstroms, the thickness of nickel oxide is 5-40 angstroms, and the thickness of indium tin oxide is 1000-3000 angstroms. The production method is to deposit one of aluminum or nickel oxide on the p-type gallium nitride layer. Heat treatment is performed on the wafer deposited with aluminum, followed by evaporation of indium tin oxide on the surface of aluminum and nickel oxide, and finally heat treatment is performed on the wafer deposited with Al / ITO and NiO / ITO. The transparent conductive film obtains high light transmittance in the range of visible light, and also obtains low contact resistivity.

Description

technical field [0001] The invention relates to a light-emitting diode, more specifically, to a P-type transparent conductive film of a gallium nitride-based light-emitting diode and a manufacturing method thereof. Background technique [0002] Due to its wide energy gap (about 3.4eV at room temperature) and its direct energy gap relationship, gallium nitride material is very suitable as a material for blue and green light emitting material components. [0003] During deposition in metalorganic chemical vapor phase epitaxy systems, NH 3 The released H atoms form a recombination center with Mg, and the deep energy level to which the recombination center belongs takes away most of the hole carriers, resulting in semi-insulating semiconductor properties, and in the process of thermal annealing activation, only About 1% of the Mg doping is activated. So in order to achieve lower contact resistance, higher hole concentration is necessary. And because of this reason, the charac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/32H01L33/42
CPCH01L33/32H01L33/42
Inventor 陈国聪王孟源雷秀铮
Owner ZHEJIANG INVENLUX TECH