Praseodymium-doped tungstate luminescent material and use thereof
A technology of tungstate and tungstate, which is applied in display and scintillation materials, and in the field of light emission, to achieve wide application prospects, low cost, and favorable lighting and color rendering effects
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example 1
[0011] Example 1: the raw material PbO, WO 3 and Pr 6 o 11 Place them in an oven at 160°C for more than 10 hours to remove moisture from the raw materials. Then the above raw materials were pressed by Pr 3+ PbWO with a doping concentration of 2at.% 4 The ratio of the crystals is required to be weighed, and the prepared raw materials are fully mixed on the drum mixer, and then the oil pressure is used at 4 tons / cm 2 The pressure is pressed into a sheet of φ50mm. Place the thin slice in a furnace at 950°C for 48 hours at a constant temperature for sintering, then grind, press, and sinter for many times until the material after multiple sinterings is identified as Pr by X-ray phase analysis. 3+ Doped PbWO 4 Single crystal powder, the crystal belongs to the tetragonal crystal system, the space group is I4 1 / a, unit cell parameters are: a=b=5.4698 Ȧ, c=12.0634 Ȧ, α=β=γ=90°, Z=4. The powder can convert a photon in the deep ultraviolet region or a shorter wavelength band int...
example 2
[0012] Example 2: Growth of Pr by pulling method 3+ Doped PbWO 4 single crystal. φ60×40mm 3 The crystal growth crucible is put into the induction heating furnace, and the crucible is filled with insulation powder around the crucible, and the Pr 3+ Doped PbWO 4 powder. Then configure the temperature field in sequence, use Pt / Pt-10%Rh thermocouple to measure the temperature, control the equal-diameter growth of the crystal by weighing method, the orientation of the seed crystal [001], and heat by the medium frequency induction method. The growth conditions are as follows: the melting temperature is 1140°C, the temperature is kept at about 20°C higher than the melting temperature for 2 hours, the temperature is slowly lowered to about 5°C above the melting point, and the seed crystal is introduced. After introduction, shouldering, and equal-diameter growth, the crystal pulling speed is 1.0-1.2mm / h, the rotation speed is 15-20rpm, and the temperature gradient at the growth in...
example 3
[0013] Example 3: the raw material La 2 o 3 、WO 3 and Pr 6 o 11 Place them in an oven at 160°C for more than 10 hours to remove moisture from the raw materials. Then the above raw materials were pressed by Pr 3+ Doping concentration of 2at.% La 2 (WO 4 ) 3 The ratio of the crystals is required to be weighed, and the prepared raw materials are fully mixed on the drum mixer, and then the oil pressure is used at 4 tons / cm 2 The pressure is pressed into a sheet of φ50mm. Place the thin slice in a furnace at 950°C for 48 hours at a constant temperature for sintering, then grind, press, and sinter for many times until the material after multiple sinterings is identified as Pr by X-ray phase analysis. 3+ Doped La 2 (WO 4 ) 3 Single crystal powder, the crystal belongs to the monoclinic system, the space group is C2 1 / c, unit cell parameters are: a=7.873 Ȧ, b=11.841 Ȧ, c=11.654 Ȧ, α=γ=90°, β=109.25°, Z=4.
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