Praseodymium-doped tungstate luminescent material and use thereof

A technology of tungstate and tungstate, which is applied in display and scintillation materials, and in the field of light emission, to achieve wide application prospects, low cost, and favorable lighting and color rendering effects

Inactive Publication Date: 2007-07-18
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Pr 3+ Ion-doped PbWO 4 Crystals as luminescent materials, especially Pr 3+ Ions are used as quantum tailoring luminescent cent

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0011] Example 1: the raw material PbO, WO 3 and Pr 6 o 11 Place them in an oven at 160°C for more than 10 hours to remove moisture from the raw materials. Then the above raw materials were pressed by Pr 3+ PbWO with a doping concentration of 2at.% 4 The ratio of the crystals is required to be weighed, and the prepared raw materials are fully mixed on the drum mixer, and then the oil pressure is used at 4 tons / cm 2 The pressure is pressed into a sheet of φ50mm. Place the thin slice in a furnace at 950°C for 48 hours at a constant temperature for sintering, then grind, press, and sinter for many times until the material after multiple sinterings is identified as Pr by X-ray phase analysis. 3+ Doped PbWO 4 Single crystal powder, the crystal belongs to the tetragonal crystal system, the space group is I4 1 / a, unit cell parameters are: a=b=5.4698 Ȧ, c=12.0634 Ȧ, α=β=γ=90°, Z=4. The powder can convert a photon in the deep ultraviolet region or a shorter wavelength band int...

example 2

[0012] Example 2: Growth of Pr by pulling method 3+ Doped PbWO 4 single crystal. φ60×40mm 3 The crystal growth crucible is put into the induction heating furnace, and the crucible is filled with insulation powder around the crucible, and the Pr 3+ Doped PbWO 4 powder. Then configure the temperature field in sequence, use Pt / Pt-10%Rh thermocouple to measure the temperature, control the equal-diameter growth of the crystal by weighing method, the orientation of the seed crystal [001], and heat by the medium frequency induction method. The growth conditions are as follows: the melting temperature is 1140°C, the temperature is kept at about 20°C higher than the melting temperature for 2 hours, the temperature is slowly lowered to about 5°C above the melting point, and the seed crystal is introduced. After introduction, shouldering, and equal-diameter growth, the crystal pulling speed is 1.0-1.2mm / h, the rotation speed is 15-20rpm, and the temperature gradient at the growth in...

example 3

[0013] Example 3: the raw material La 2 o 3 、WO 3 and Pr 6 o 11 Place them in an oven at 160°C for more than 10 hours to remove moisture from the raw materials. Then the above raw materials were pressed by Pr 3+ Doping concentration of 2at.% La 2 (WO 4 ) 3 The ratio of the crystals is required to be weighed, and the prepared raw materials are fully mixed on the drum mixer, and then the oil pressure is used at 4 tons / cm 2 The pressure is pressed into a sheet of φ50mm. Place the thin slice in a furnace at 950°C for 48 hours at a constant temperature for sintering, then grind, press, and sinter for many times until the material after multiple sinterings is identified as Pr by X-ray phase analysis. 3+ Doped La 2 (WO 4 ) 3 Single crystal powder, the crystal belongs to the monoclinic system, the space group is C2 1 / c, unit cell parameters are: a=7.873 Ȧ, b=11.841 Ȧ, c=11.654 Ȧ, α=γ=90°, β=109.25°, Z=4.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to light emitting, display and scintillation material technology, and is especially one kind of light-emitting Pr doped tungstate material and its use. The light-emitting Pr doped tungstate material may be in monocrystal, powder or glass form. By means of the quantum cutting of Pr3+ ion and the energy transfer between tungstate radical and Pr3+ ion, one photon in deep ultraviolet area or in even short wavelength area is converted into two visible photons for human eye and CCD to sense, so as to realize quantum cutting to the 490-650 nm visible light area in the total quantum efficiency over 100 %. The light-emitting Pr doped tungstate material is used as the ultraviolet and even short wavelength ray excited light emitting material and the scintillation material in short wavelength photon detector and high energy particle detector.

Description

technical field [0001] The invention relates to the field of luminescence, display and scintillation materials, in particular to praseodymium-doped tungstate and its growth preparation and application which can be applied in the above fields. Background technique [0002] At present, mercury fluorescent lamp is a widely used lighting fixture, but because mercury vapor has serious pollution to the environment, researchers are working hard to develop green lighting lamps, which use inert gas discharge instead of mercury vapor discharge. At the same time, in the current flat-panel displays, the plasma display is a promising device, especially in the super-large display, which has a position that cannot be replaced by other flat-panel displays. The display also uses inert gas discharge. The emission wavelength of inert gas discharge is mainly in the deep ultraviolet region shorter than 200nm. In the field of lighting and display, it is necessary to use the ultraviolet photons ge...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09K11/78
Inventor 黄艺东熊飞兵林炎富龚兴红陈雨金罗遵度谭奇光
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products