Raw material formulation and method for low-temperature silicon carbide synthesization

A technology of silicon carbide and low temperature, which is applied in the field of raw material formula for low temperature synthesis of silicon carbide, can solve the problems of low carbothermal reduction temperature and long reaction time, and achieve the effect of simple equipment, easy source and low reaction temperature

Inactive Publication Date: 2007-09-26
FUZHOU UNIVERSITY
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Problems solved by technology

Chinese patent (publication number: CN 1401564A) reported that phenolic resin was used as the carbon source and silicate was used as the silicon source, and the precursor was synthesized by the sol-gel method under the catalysis of transition metals, and then reacted at 1250 ° C to obtain The carbothermal reduction temperature

Method used

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  • Raw material formulation and method for low-temperature silicon carbide synthesization
  • Raw material formulation and method for low-temperature silicon carbide synthesization
  • Raw material formulation and method for low-temperature silicon carbide synthesization

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Example Embodiment

[0021] The corresponding minimum reaction temperature in Example 2 was 900°C.

Example Embodiment

[0022] The corresponding minimum reaction temperature in Example 3 was 850°C.

Example Embodiment

[0023] Example 1

[0024] 25g of sucrose was dissolved in a mixed solution of 20ml of deionized water and 30ml of absolute ethanol, 3.5g of ferric nitrate (ferric nitrate nonahydrate) was added, and 50ml of TEOS and 10ml of 3.5% oxalic acid solution were added dropwise at the same time. Stir well at 60°C for hydrolysis until the solution becomes gel. The gel was dried at 100 °C for 30 h to obtain a silicon carbide precursor xerogel. The resulting dry glue was placed in a vacuum graphite furnace, and the air pressure in the furnace was pumped to 10 -2 Pa, continue to start the mechanical pump, heat at a heating rate of 20°C / min under power vacuum conditions, record the change of air pressure in the furnace with temperature, and draw a curve of air pressure in the furnace versus temperature, as shown in Figure 1, determine the carbon The minimum temperature required to prepare silicon carbide by thermal reduction is 1000°C. Then the reaction is carried out under the condition...

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Abstract

The invention discloses a raw material dispense prescriptions to synthesize carbofrax at low temperature and method, which comprises the following steps: making cane sugar, alcohol water solution, ferric nitrate, normal ethyl-silicones acid and acid catalyst as raw material dispense prescriptions; dissolving cane sugar into alcohol water solution; adding into ferric nitrate; dipping normal ethyl-silicones acid and acid catalyst; preparing carbofrax forerunner body xerogel; placing xerogel in vacuum graphite oven to carbon thermal reduction; preparing carbofrax; cooling model to room temperature; dealing several hours in the air; washing with mixed solution of fluohydric acid and azotic acid; washing; filtering; drying; getting purified carbofrax.

Description

technical field [0001] The invention belongs to the field of silicon carbide materials, and in particular relates to a raw material formula and method for synthesizing silicon carbide at low temperature. Background technique [0002] Silicon carbide (SiC) has the advantages of good thermal conductivity, chemical stability, thermal shock resistance, etc., and has been widely used in catalysis, ceramics, metal composite materials and wear-resistant materials. Semiconductor materials with band gap, high electron mobility and high thermal conductivity have good application prospects in the fields of electronics, luminescence, and sensors. At present, the preparation method of silicon carbide is mainly the Acheson method, that is, coke powder and quartz sand are mixed in a molar ratio of 3:1, an appropriate amount of additives are added, and then heated to above 2000 ° C in an electric arc furnace. A series of complex chemical reactions produce silicon carbide. Domestic and for...

Claims

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Application Information

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IPC IPC(8): C01B31/36
Inventor 魏可镁郑勇郑瑛王榕
Owner FUZHOU UNIVERSITY
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