NPN type germanium-silicon heterogenous dual-pole transistor and its making method

Abstract

The invention is concerned with a kind of NPN type of SiGe heterojunction bipolar transistor and its preparation method, belonging to semiconductor device preparation technology field. Implant selectivity ion into impure collector, and carry epitaxial growth of SiGe base area after high temperature annealing. It activates the implanted impurity primely and keeps the quality of SiGe layer. Product integrating circuit unit apparatus, and its collector is at a same plane with base pole and emitter. This method carries epitaxial growth of N- collector and SiGe area to reduce autoeciousness parameter of apparatus. It uses sidewall to separate and form silicide on outside base area and emitter to reduce resistance between base pole and emitter and enhance high frequency capability of apparatus.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device preparation, in particular to an NPN-type germanium-silicon heterojunction bipolar transistor (SiGeHBT) and a manufacturing method thereof. Background technique [0002] The performance of silicon-germanium heterojunction transistors with energy band engineering characteristics is obviously better than that of silicon bipolar transistors with doping engineering characteristics, and has been developed rapidly in recent years. The energy band structure of NPN SiGeHBT inhibits the injection of holes from the base region to the emitter region, which is conducive to the injection of electrons from the emitter region to the base region, thus improving the injection efficiency of the emitter, and the current gain is mainly determined by the energy band instead of only by The impurity concentration ratio of the emitter region and the base region is determined, so that the impurity concentrati...

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Problems solved by technology

[0003] The structure of SiGeHBT has three forms: non-self-aligned, self-aligned and super-self-aligned. The process of self-aligned and super-self-aligned structures is complicated. The process of existing non-self-aligned structures is relatively simple, but there are also defects. For example, the selective ion implantation collector (SIC) is carried out after SiGe epitaxy, and impurity ions penetrate through the SiGe layer, causing a certain degree of lattice damage to the SiGe layer, and the annealing temperature and time required for lattice recovery are subject to certain restrictions. limit, otherwise it is easy to relax the SiGe layer, resulting in junction leakage

In addition, the steps brought by the deep trench isolation need to be backfilled and planarized, otherwise it will cause difficulties in the subsequent process, such as the metal is easy to break at the steps, etc.

Finally, the base resistance and its contact resistance in conventional bipolar junction transistors are difficult to make small, and the base resistance and each ohmic contact resistance have a great influence on the high-frequency power gain and noise performance of the device, so it is necessary to reduce the base resistance and each ohmic contact resistance to improve the high frequency performance of the device

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