NPN type germanium-silicon heterogenous dual-pole transistor and its making method

A heterojunction bipolar, manufacturing method technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of SiGe layer relaxation, metal broken bars, leakage, etc., to reduce series resistance, The effect of improving high frequency performance and reducing parasitic parameters

Inactive Publication Date: 2008-01-09
中国电子信息产业集团有限公司 +1
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Problems solved by technology

[0003] The structure of SiGeHBT has three forms: non-self-aligned, self-aligned and super-self-aligned. The process of self-aligned and super-self-aligned structures is complicated. The process of existing non-self-aligned structures is relatively simple, but there are also defects. For example, the selective ion implantation collector (SIC) is carried out after SiGe epitaxy, and impurity ions penetrate through the SiGe layer, causing a certain degree of lattice damage to the SiGe layer, and the annealing temperature and time required for lattice recovery are subject to certain restrictions. limit, otherwise it is easy to relax the SiGe layer, resul

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  • NPN type germanium-silicon heterogenous dual-pole transistor and its making method
  • NPN type germanium-silicon heterogenous dual-pole transistor and its making method

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Embodiment Construction

[0031] The present invention provides an NPN-type silicon-germanium heterojunction bipolar transistor (SiGeHBT) and a manufacturing method thereof. The upper electrode and through hole of the base are not shown). After simplified steps, a discrete device with a collector on the back side can also be fabricated, the structure of which is shown in schematic diagram 2. The method adopts conventional microfabrication, and the manufacturing process characteristics of the NPN-type germanium-silicon heterojunction bipolar transistor are as follows:

[0032] 1. Formation of the collector region, first, SiO is fabricated on the P-type silicon wafer 1 2 Layer 7, using dry etching or / and wet etching, on SiO 2 A window of local N+ buried layer 2 is opened on layer 7, and a high dose of N-type impurity arsenic, antimony or phosphorus is injected, and then annealed in a high-temperature furnace to make the N+ / P junction depth meet the design requirements, usually 1-3 μm deep. Boron ion ...

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Abstract

The invention is concerned with a kind of NPN type of SiGe heterojunction bipolar transistor and its preparation method, belonging to semiconductor device preparation technology field. Implant selectivity ion into impure collector, and carry epitaxial growth of SiGe base area after high temperature annealing. It activates the implanted impurity primely and keeps the quality of SiGe layer. Product integrating circuit unit apparatus, and its collector is at a same plane with base pole and emitter. This method carries epitaxial growth of N- collector and SiGe area to reduce autoeciousness parameter of apparatus. It uses sidewall to separate and form silicide on outside base area and emitter to reduce resistance between base pole and emitter and enhance high frequency capability of apparatus.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device preparation, in particular to an NPN-type germanium-silicon heterojunction bipolar transistor (SiGeHBT) and a manufacturing method thereof. Background technique [0002] The performance of silicon-germanium heterojunction transistors with energy band engineering characteristics is obviously better than that of silicon bipolar transistors with doping engineering characteristics, and has been developed rapidly in recent years. The energy band structure of NPN SiGeHBT inhibits the injection of holes from the base region to the emitter region, which is conducive to the injection of electrons from the emitter region to the base region, thus improving the injection efficiency of the emitter, and the current gain is mainly determined by the energy band instead of only by The impurity concentration ratio of the emitter region and the base region is determined, so that the impurity concentrati...

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Application Information

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IPC IPC(8): H01L29/737H01L21/331
Inventor 张伟钱佩信刘志弘徐阳熊小义周卫王玉东李高庆蒋志许平
Owner 中国电子信息产业集团有限公司
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