Highly heat-resistant synthetic polymer compound and high withstand voltage semiconductor device

A technology for synthesizing polymers and compounds, which is applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc. The effect of high dispersion effect
CN101107293AInactive Publication Date: 2008-01-16THE KANSAI ELECTRIC POWER CO +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
THE KANSAI ELECTRIC POWER CO
Publication Date
2008-01-16
Estimated Expiration
Not applicable · inactive patent

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Abstract

The outer surface of a wide-gap semiconductor device is covered with a synthetic polymer compound. The synthetic polymer compound is formed by linking a plurality of third organosilicon polymers through covalent bonding which is formed by addition reaction, and has a three-dimensional steric structure. The third organosilicon polymers are obtained by linking one or more kinds of first organosilicon polymers having a bridge structure formed by siloxane bonds (Si-O-Si bonds) with one or more kinds of second organosilicon polymers having a linear structure formed by siloxane bonds. Insulating ceramic fine particles having high heat conductivity are preferably mixed with the synthetic polymer compound.
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Description

technical field

[0001] The present invention relates to a synthetic high molecular compound with high heat resistance and a high withstand voltage power semiconductor device covered with the synthetic high molecular compound. The semiconductor device has high heat resistance and good heat dissipation. Background technique

[0002] For a power semiconductor device that handles relatively large power, the temperature of the semiconductor device becomes high due to heat generated when high-power energization is performed, and such a power semiconductor device is required to have high heat resistance. Power semiconductor devices at the present stage are basically silicon (Si) power semiconductor devices, but the heat resistance limit temperature of Si power semiconductor devices is usually 150°C. Attempts are currently being made to increase the heat-resistant limit temperature of silicon power semiconductor devices to around 200°C.

[0003] On the other hand, attempts have bee...

Claims

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