Radiation-absorbing composite diamond heat-exchanging diaphragm and manufacture method thereof
A technology of composite diamond and heat exchange film, which is applied in the field of radiation absorbing composite diamond heat exchange film and its preparation, can solve the problems of falling off of different growth layers, insufficient thermal conductivity, unstable glow, etc. Short, strong thermal shock resistance, stable and unchanged absorption rate
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Embodiment 1
[0022] The preparation method of the radiation absorbing composite diamond heat exchange diaphragm is as follows:
[0023] a. One-time chemical vapor deposition diamond heat sink.
[0024] The MW-PCVD microwave plasma chemical vapor deposition system is used to prepare the diamond heat sink. 2 And CH 4 It is used as a raw material medium and a metal molybdenum sheet as a substrate. It belongs to a non-polar discharge method, and can obtain high-quality, high-purity transparent diamond film under lower pressure. The substrate processing method is to grind with diamond paste for 15 minutes, and then ultrasonically treat with acetone and alcohol for 10 minutes. Both hydrogen and methane are controlled by mass flow meters, H 2 Flow rate is 200sccm, CH 4 The flow rate is 3sccm, the microwave power is 4.2KW, the deposition pressure is 11KPa, the substrate temperature is 850°C, and the growth rate is about 3μm / h. The thermal conductivity of the prepared diamond diaphragm is 15W / K·cm, and...
Embodiment 2
[0031] Prepare the radiation-absorbing composite diamond heat exchange membrane according to the same method as in Example 1, the difference is only:
[0032] (1) The deposition process conditions of a chemical vapor deposition diamond heat sink are: H 2 Flow rate is 200sccm, CH 4 The flow rate is 1sccm, the microwave power is 3.8KW, the deposition pressure is 17KPa, the substrate temperature is 950°C, and the growth rate is about 1μm / h. The thermal conductivity of the obtained diamond film is 18W / K·cm and the resistivity is 10 15 Ω·cm.
[0033] (2) The deposition process conditions of the secondary chemical vapor deposition of black diamond film are: the flow rates of hydrogen and methane are: H 2 = 160sccm, CH 4 =15sccm,; the temperature in the deposition chamber is 750°C; the air pressure in the deposition chamber is 135 Torr; the bias voltage is 750V, the current is 8.8A; the deposition time is 3 hours. The obtained black diamond film has a thermal conductivity of 8W / K·cm and ...
Embodiment 3
[0035] Prepare the radiation-absorbing composite diamond heat exchange membrane according to the same method as in Example 1, the difference is only:
[0036] (1) The deposition process conditions of a chemical vapor deposition diamond heat sink are: H 2 Flow rate is 200sccm, CH 4 The flow rate is 2sccm, the microwave power is 4KW, the deposition pressure is 13KPa, the substrate temperature is 750°C, and the growth rate is about 2μm / h. The prepared diamond sheet has a thermal conductivity of 17W / K·cm and a resistivity of 10 14 Ω·cm.
[0037] (2) The deposition process conditions of the secondary chemical vapor deposition of black diamond film are: the flow rates of hydrogen and methane are: H 2 = 160sccm, CH 4 =10sccm,; the temperature in the deposition chamber is 850°C; the air pressure in the deposition chamber is 125 Torr; and the deposition time is 2 hours. The obtained black diamond film has a thermal conductivity of 7W / K·cm and a resistivity of 10 11 Ω·cm, the roughness is 1...
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