Preparation method of ZnO nano crystal whisker reinforced silicon-based lead zirconate titanate piezoelectric composite thick film

A technology of silicon-based zirconium titanate and nano whiskers, which is applied in the manufacture/assembly of piezoelectric/electrostrictive devices, etc., can solve the problems of large loss of piezoelectric performance, failure, and large surface roughness, and achieve surface The effect of smooth and crack-free, wide application potential and excellent mechanical properties

Inactive Publication Date: 2009-09-16
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, the preparation of PZT thick films by traditional chemical methods is prone to microcracks, which seriously affects the performance of thick films and even leads to their failure. In addition, there are problems such as large surface roughness, which limits the development and application of thick films; After the improved traditional process, such as the use of 0-3 composite, non-piezoelectric phase, polymer and other low-voltage phase reinforcement methods, even if the generation of micro-cracks is reduced, the mechanical properties of PZT thick film are still unsatisfactory, and the work is prone to fatigue , poor stability, and greater loss of piezoelectric performance

Method used

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  • Preparation method of ZnO nano crystal whisker reinforced silicon-based lead zirconate titanate piezoelectric composite thick film
  • Preparation method of ZnO nano crystal whisker reinforced silicon-based lead zirconate titanate piezoelectric composite thick film
  • Preparation method of ZnO nano crystal whisker reinforced silicon-based lead zirconate titanate piezoelectric composite thick film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] 1) The raw materials used in the experiment are analytically pure lead acetate trihydrate, zirconium nitrate and tetrabutyl titanate, ethylene glycol monomethyl ether and glacial acetic acid are used as solvent, and acetylacetone is used as catalyst; according to the chemical formula Pb(Zr 0.52 Ti 0.48 )O 3 The molar ratio of raw materials is weighed, and the final PZT sol concentration is controlled at 0.4Mol / l;

[0028] 2) First, dissolve zirconium nitrate in ethylene glycol monomethyl ether to form a solution with a concentration of 0.25Mol / l, stir until transparent and clear, then add tetrabutyl titanate and acetylacetone, reflux and stir until clear. Among them, acetylacetone is used as a stabilizer, and its volume ratio to tetrabutyl titanate is 1:1.6;

[0029] 3) Dissolve analytically pure lead acetate trihydrate in acetic acid, the concentration of the acetic acid solution of lead acetate trihydrate is 2Mol / l, heat between 100°C and 117°C for 20min, distill to...

Embodiment 2

[0036] 1) The raw materials used in the experiment are analytically pure lead acetate trihydrate, zirconium nitrate and tetrabutyl titanate, ethylene glycol monomethyl ether and glacial acetic acid are used as solvent, and acetylacetone is used as catalyst; according to the chemical formula Pb(Zr 0.52 Ti 0.48 )O 3 The molar ratio of raw materials is weighed, and the final PZT sol concentration is controlled at 0.4Mol / l;

[0037] 2) First, dissolve zirconium nitrate in ethylene glycol monomethyl ether to form a solution with a concentration of 0.25Mol / l, stir until transparent and clear, then add tetrabutyl titanate and acetylacetone, reflux and stir until clear. Among them, acetylacetone is used as a stabilizer, and its volume ratio to tetrabutyl titanate is 1:1.6;

[0038] 3) Dissolve analytically pure lead acetate trihydrate in acetic acid, the concentration of the acetic acid solution of lead acetate trihydrate is 2Mol / l, heat between 100°C and 117°C for 20min, distill to...

Embodiment 3

[0045] 1) The raw materials used in the experiment are analytically pure lead acetate trihydrate, zirconium nitrate and tetrabutyl titanate, ethylene glycol monomethyl ether and glacial acetic acid are used as solvent, and acetylacetone is used as catalyst; according to the chemical formula Pb(Zr 0.52 Ti 0.48 )O 3 The molar ratio of raw materials is weighed, and the final PZT sol concentration is controlled at 0.4Mol / l;

[0046] 2) First, dissolve zirconium nitrate in ethylene glycol monomethyl ether to form a solution with a concentration of 0.25Mol / l, stir until transparent and clear, then add tetrabutyl titanate and acetylacetone, reflux and stir until clear. Among them, acetylacetone is used as a stabilizer, and its volume ratio to tetrabutyl titanate is 1:1.6;

[0047] 3) Dissolve analytically pure lead acetate trihydrate in acetic acid, the concentration of the acetic acid solution of lead acetate trihydrate is 2Mol / l, heat between 100°C and 117°C for 20min, distill to...

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Abstract

The invention relates to a preparation method of ZnO nano crystal whisker reinforced silicon-based lead zirconate titanate piezoelectric composite thick film and belongs to the field of electronic material. The method of the invention comprises the steps of adding ZnO nano crystal whisker to alcohol to be prepared into ZnO suspension with a certain concentration, alternately coating clear PZT sol and ZnO suspension on a Pt / Cr / SiO2 / Si substrate by a spin coating method to form film, alternately coating for plural times until a desired thickness is obtained, and finally thermally processing the obtained thick film in a high-temperature tube furnace to obtain the silicon-based PZT piezoelectric composite thick film. The PZT piezoelectric composite thick film prepared by the method has smooth surfaces, uniform components and a film thickness more than 1 micron, and has no cracks. The PZT piezoelectric composite thick film prepared by the invention meets the actual requirements of MEMS ferro-electricity and piezoelectric device on the thick film, and can be widely applied to the high-tech fields of aviation, spaceflight, weapon, ship, information and communication.

Description

technical field [0001] The invention relates to a preparation method of ZnO nano-whisker reinforced silicon-based lead zirconate titanate piezoelectric composite thick film, which belongs to the field of electronic materials. Background technique [0002] Lead zirconate titanate is PZT, its chemical formula is PbZr x Ti 1-x o 3 , belongs to ABO 3 Binary system solid solution of type perovskite structure (PbZrO 3 and PbTiO 3 solid solution). In each perovskite cell, lead ions (Pb 2+ ) occupies the positions of 8 vertices, oxygen ions (O 2- ) occupy 6 face centers, zirconium or titanium ions (Zr 4+ / Ti 4+ ) is located at the center of the octahedron. The radii of zirconium and titanium ions are 0.072 (nm) and 0.061 (nm) respectively, which are smaller than the vacancies of the octahedron, so displacement can occur after an external electric field or pressure is applied, and at the same time, oxygen ions will displace in the opposite direction of zirconium and titaniu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/22C04B35/81C04B35/491C04B35/622H01L41/39
Inventor 曹茂盛段中夏赵全亮袁杰路冉
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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