Antireflection film used in all-angle and wide wavelength range and preparation method thereof

A wide-wavelength, full-angle technology, applied in the field of anti-reflection film and its preparation, can solve the problems of high cost, complex process, inability to use polycrystalline silicon and amorphous silicon solar cells, etc., and achieve the effect of increasing mechanical properties and firmness.

Inactive Publication Date: 2010-03-10
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are mainly three types of anti-reflection films for solar cells. The first type is a traditional low-refractive index single-layer film or a multi-layer film stack with a thickness of 1/4 wavelength. Low reflectivity, such as the surface of silicon solar cells is often coated with silicon nitride (SiN x ) film, the disadvantage of this type of anti-reflection film is that it can only achieve good anti-reflection effect in a limited wavelength range and normal incidence
The second type is the graded index antireflection film. The refractive index of this type of film decreases gradually from the substrate to the air. If the refractive index of the designed film is close to the substrate

Method used

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  • Antireflection film used in all-angle and wide wavelength range and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] 1) Mix metal alkoxide, water, ethanol and hydrochloric acid with a molar ratio of 1:1:10:0.01, stir, carry out hydrolysis polymerization, and age for 7 days, wherein the metal alkoxide is ethyl orthosilicate;

[0022] 2) Coating the aged solution on the surface of the optical glass substrate 1 by a pulling method at a pulling rate of 50 mm / min, annealing at a temperature of 200° C. after the film is formed, to obtain the first sol-gel cross-linked Linked film layer 2;

[0023] 3) The substrate 1 coated with the first sol-gel cross-linked film layer 2 is immersed in an aqueous solution of polyelectrolyte polydiallyldimethylammonium chloride for 5 minutes to make the first sol-gel cross-linked film layer 2 The surface is uniformly positively charged. After taking it out, rinse it with deionized water to remove excess polyelectrolyte polydiallyl dimethyl ammonium chloride. The molecular weight of polyelectrolyte polydiallyl dimethyl ammonium chloride is 20~ 350,000, the c...

Embodiment 2

[0029] 1) Mix metal alkoxide, water, ethanol and hydrochloric acid with a molar ratio of 1:4:40:0.01, stir, carry out hydrolysis polymerization, and age for 5 days, wherein the metal alkoxide is ethyl orthosilicate and titanic acid Butyl ester and mixed solution, the molar ratio is 1: 1;

[0030] 2) Coating the aged solution on the surface of the silicon single crystal substrate 1 with a pulling method at a pulling rate of 400 mm / min, and annealing at 500°C after the film is formed to obtain the first sol-gel Cross-linked film layer 2;

[0031] 3) The substrate 1 coated with the first sol-gel cross-linked film layer 2 is immersed in an aqueous solution of polyelectrolyte polydiallyldimethylammonium chloride for 5 minutes to make the first sol-gel cross-linked film layer 2 The surface is uniformly positively charged. After taking it out, rinse it with deionized water to remove excess polyelectrolyte polydiallyl dimethyl ammonium chloride. The molecular weight of polyelectrolyt...

Embodiment 3

[0037] 1) Mix metal alkoxide, water, ethanol and hydrochloric acid with a molar ratio of 1:2:37:0.01, stir, carry out hydrolysis polymerization, and age for 7 days, wherein the metal alkoxide is ethyl orthosilicate;

[0038] 2) Coating the aged solution on the surface of the optical glass substrate 1 by a pulling method at a pulling rate of 300 mm / min, and annealing at a temperature of 500° C. after the film is formed, to obtain the first sol-gel cross-linking method. Linked film layer 2;

[0039] 3) The substrate 1 coated with the first sol-gel cross-linked film layer 2 is immersed in an aqueous solution of polyelectrolyte polydiallyldimethylammonium chloride for 5 minutes to make the first sol-gel cross-linked film layer 2 The surface is uniformly positively charged. After taking it out, rinse it with deionized water to remove excess polyelectrolyte polydiallyl dimethyl ammonium chloride. The molecular weight of polyelectrolyte polydiallyl dimethyl ammonium chloride is 20~ ...

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Abstract

The invention discloses an antireflection film used in the all-angle and wide wavelength range and a preparation method thereof. The film comprises a substrate, a first sol-gel layer, a silica nanoparticle layer and a second sol-gel layer. A first sol-gel film layer is prepared on the substrate by a pulling method, then a silica particle layer is prepared on the surface of the film by a molecularself-assembly technique, and finally a second sol-gel film layer is prepared on the surface of the film layer by the pulling method, wherein, the film on each layer is subjected to heat treatment. Byoptimizing the technological parameters, the film can have the following characteristics: the refractive index in the direction from the substrate to the air decreases progressively, the thickness matches and the surface micro-structure is two-dimensional ordered; therefore, the film realizes the antireflection effect in the all-angle and wide wavelength range and simultaneously has the ability of film forming in large area, the mechanical property and firmness of the whole antireflection film can be effectively improved, and the energy use ratios of the solar cells and the solar collector tubes are increased.

Description

technical field [0001] The invention relates to a film and a preparation method thereof, in particular to an anti-reflection film used in a full angle and wide wavelength range and a preparation method thereof. Background technique [0002] With the rapid development of the global economy, the demand for energy is becoming more and more urgent. However, the amount of fossil energy such as oil, coal, and natural gas on the earth is limited and will be exhausted within a certain period of time, which will inevitably lead to an energy crisis. The research and development of solar energy has gradually been paid attention to, and the industrial scale is huge. Among them, solar cells, solar collectors and other devices use monocrystalline silicon, polycrystalline silicon and glass as substrate materials. Since materials such as silicon and glass have a certain refractive index (the refractive index of silicon in the visible light to near-infrared region is between 3.4-5, and that ...

Claims

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Application Information

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IPC IPC(8): B32B9/04B32B5/16B32B7/02G02B1/11C03C17/34G02B1/111
Inventor 叶辉尹伊许坚刘旭
Owner ZHEJIANG UNIV
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