Method for preparing trichlorosilane and dichlorosilane by hydrogenating silicon tetrachloride through microwave plasma

A hydrogenated silicon tetrachloride production, microwave plasma technology, applied in the direction of silicon halides, halosilanes, etc., can solve the problems of high equipment requirements, high energy consumption, low plasma ionization degree, etc., to achieve a high conversion rate, The effect of high ion density and simple system

Inactive Publication Date: 2010-06-16
INST OF PROCESS ENG CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0007] 1. A lot of impurities are introduced in the reaction, which brings difficulties to the subsequent purification;
[0008] 2. The one-time conversion rate of the reaction is low, the product needs to be separated and purified many times, and the energy consumption is high;
[0009] 3 The reaction is high temperature and high pressure, high equipment requirements and high operating costs
Therefore these two kinds of plasma methods are bound to consume a large amount of energy and raw materials, and the economic benefits are poor.
[0015] 2 The electric fie

Method used

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  • Method for preparing trichlorosilane and dichlorosilane by hydrogenating silicon tetrachloride through microwave plasma
  • Method for preparing trichlorosilane and dichlorosilane by hydrogenating silicon tetrachloride through microwave plasma

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Example Embodiment

[0045] Example 1

[0046] SiCl 4 As raw material, reference figure 1 The system and process flow of this invention are introduced in detail to produce SiHCl 3 Methods.

[0047] This example produces SiHCl 3 The system includes the following parts: the first gas control system for starting the arc gas hydrogen and argon gas 1, adjusting the raw material gas hydrogen and SiCl 4 Inlet second gas control system 2, plasma reactor 3, condensation separation system for separating chlorosilane from other gases 4, tail gas treatment system for separating hydrogen, argon and hydrogen chloride gas 5, various chlorosilanes Separate fractionation and separation system 6, microwave generator 7 that provides microwaves for the plasma generator, microwave transmission waveguide 8 and microwave resonator 9. The above-mentioned equipment is conventional equipment used in this profession; figure 1 The system shown uses SiCl 4 Production of SiHCl as raw material 3 The method specifically includes the...

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Abstract

The invention provides a method for preparing trichlorosilane and dichlorosilane by hydrogenating silicon tetrachloride through microwave plasma, which aims to solve the problems of high energy consumption, low single-pass conversion rate and high equipment investment in the catalytic hydrogenation of the silicon tetrachloride by a Siemens method and problems of high energy consumption and material consumption and difficult industrialization in hydrogenating the silicon tetrachloride by a conventional thermal plasma method and a radio-frequency induction plasma method in the conventional polysilicon industry. The method comprises the following steps: forming a stable cold plasma through arced hydrogen, argon or a mixture of the two under excitation of microwaves; forming a plasma jet flow by a plasma torch under the condition of the flow of the arced gas; and ejecting feed gas into a specific area of the plasma jet flow to form an active particle consumption zone in which the silicon tetrachloride is hydrogenated into trichlorosilane. The single-pass conversion rate of the silicon tetrachloride of the method reaches about 60 percent; and the method has the advantages of simple subsequent treatment of a product, low requirement on equipment and operation control, and easy realization of industrialization.

Description

technical field [0001] The invention relates to a method for producing trichlorosilane, in particular to a method for producing trichlorosilane and dichlorosilane by using microwave plasma hydrogenation technology. Background technique [0002] In the current industrial production of polysilicon at home and abroad, most production plants adopt the Siemens method, using trichlorosilane chemical vapor deposition of polysilicon. Trichlorosilane is produced by catalytic reaction of hydrogen chloride and metallurgical silicon under the conditions of 300°C and 0.45MPa, and silicon tetrachloride is the main by-product of the reaction. Among the synthetic products, trichlorosilane accounts for about 80%, and silicon tetrachloride accounts for about 20%. The synthesis gas is separated by cold distillation, silicon tetrachloride is separated as a by-product, and the purified trichlorosilane enters the next step of polysilicon vapor deposition reaction. [0003] The gas-phase deposit...

Claims

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Application Information

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IPC IPC(8): C01B33/107
Inventor 张伟刚卢振西
Owner INST OF PROCESS ENG CHINESE ACAD OF SCI
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