Structure of SiC or Si substrate GaN-based crystal and method for growing same
A growth method and substrate technology, applied in the field of optoelectronics, can solve problems such as complex implementation and no implementation method given, and achieve the effects of easy implementation, novel method, and improved crystal quality
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[0023] Such as figure 2 As shown, the structure of the SiC or Si substrate GaN-based crystal grown by resonance in the present invention also includes SiC or Si substrate, AlN buffer layer, N-type GaN layer, MQW (multiple quantum well) layer and P-type GaN from bottom to top. Floor. The AlN buffer layer has 3-5 cycles of three-dimensional and two-dimensional structure. The thickness of the three-dimensional AlN is 50nm-100nm, and the thickness of the two-dimensional AlN is 30nm-60nm. It is grown by the MOCVD (metal organic chemical vapor deposition) method. The AlN buffer layer It is obtained through the resonant growth method of three-dimensional and two-dimensional cyclic growth. The specific growth process is:
[0024] (1) First, deposit a high-temperature AlN buffer layer on the SiC or Si substrate in the MOCVD equipment at 900℃-1100℃, the specific process is: first at 900℃-1000℃, NH 3 Under the condition of flow rate of 2L / min-4L / min, the three-dimensional growth of AlN (...
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