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N-shaped titanium oxide nanotube/p-shaped diamond heterojunction photocatalytic material and preparation method

A photocatalytic material, diamond technology, applied in the direction of metal/metal oxide/metal hydroxide catalyst, catalyst activation/preparation, chemical instruments and methods, etc., to improve separation, maintain photocatalytic performance, and stabilize photocatalytic performance Effect

Inactive Publication Date: 2010-07-28
JILIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the research and method of preparing n-type titanium oxide nanotube / p-type diamond heterojunction photocatalyst with anatase structure have not been reported yet.

Method used

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  • N-shaped titanium oxide nanotube/p-shaped diamond heterojunction photocatalytic material and preparation method
  • N-shaped titanium oxide nanotube/p-shaped diamond heterojunction photocatalytic material and preparation method
  • N-shaped titanium oxide nanotube/p-shaped diamond heterojunction photocatalytic material and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1 Growth of TiO on boron-doped polycrystalline diamond film 2 Nanotube Preparation.

[0024] The boron-doped p-type polycrystalline diamond film is prepared by microwave plasma CVD, the substrate is intrinsic silicon Si, the microwave power is 400-600W, the pressure is 7.5-8.5kPa, the flow rate of hydrogen gas is 200-300sccm, and the flow rate of methane gas is 4-6sccm. The boron source uses borane or trimethyl borate, and the borane or trimethyl borate is carried by hydrogen gas into the reaction chamber, the flow rate is 5-15 sccm, the substrate temperature is kept at 700-900°C, and the film growth time is 3-6h.

[0025] To grow boron-doped p-type CVD polycrystalline micro-diamond film, hot filament CVD, DC hot cathode CVD or DC jet CVD can also be used.

[0026] 30ml of equimolar (0.025mol / L) Zn(Ac) and HMT mixture was stirred for 10min and then poured into the lining of a 40ml reactor. Put the above-mentioned p-type diamond film vertically into it, seal it...

Embodiment 2

[0029] Example 2 Testing the electrical properties of the n-type titanium oxide nanotube / p-type diamond heterojunction

[0030] The electrical properties of the n-type titanium oxide nanotube / p-type diamond heterojunction obtained in Example 1 were studied. n-type TiO 2 Schematic diagram of nanotube / p-type diamond heterojunction structure Figure 4 shown. Press the conductive side of the conductive glass (ITO) down on the TiO 2 The nanotube array is used as a conductive cathode; p-type diamond is used as an anode. Use silver paste to connect copper wires to make ohmic electrodes. Connect it with a Keithley 2400 digital source meter for testing with wires. I-V test results such as Figure 5 It is shown that the heterojunction has obvious rectifying properties.

Embodiment 3

[0032] The n-type titanium oxide nanotube / p-type diamond heterojunction obtained in Example 1 was used for photocatalytic degradation of the organic dye reactive yellow 15 (RY15) in a self-made reactor. In the experiment, the irradiation light source is a 500W high-pressure mercury lamp, the concentration of reactive yellow 15 dye is 10mg / L, the volume is 4ml, and the illuminated area of ​​the sample is 2cm 2 . In order to compare the photocatalytic effect of the heterojunction photocatalytic material, in addition to the long TiO 2 Photocatalytic tests performed on intrinsic diamond polycrystalline films of nanotubes. Compare the result as Figure 6 shown. By comparison, the n-type titanium oxide nanotube / p-type diamond heterojunction exhibits more excellent photocatalytic performance.

[0033] In order to measure the photocatalytic stability of the n-type titanium oxide nanotube / p-type diamond heterojunction photocatalytic material, the heterojunction photocatalytic mater...

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Abstract

The invention relates to an n-shaped titanium oxide nanotube / p-shaped diamond heterojunction photocatalytic material and a preparation method, belonging to the technical field of photocatalytic materials and the preparation thereof. The photocatalytic material is formed by growing an n-shaped TiO2 nanotube with an anatase structure on a p-shaped diamond. The preparation method comprises the following steps of: 1. growing a boron-doped p-shaped polycrystalline diamond film or boron-doped p-shaped diamond single crystal; 2. sputtering a ZnO seed crystal layer on a p-shaped diamond; 3. growing a ZnO nano rod on the ZnO seed crystal layer in the mixed water solution of zinc acetate and hexamethylene tetramine; and 4. growing the n-shaped TiO2 nanotube on the p-shaped diamond in the mixed solution of ammonium fluorotitanate and boric acid by using the ZnO nano rod as a template. The.TiO2 nanotube is prepared on the diamond by utilizing a liquid-phase synthesis method, thus heterojunction with excellent photocatalytic performance is obtained; and the method is simple, has low cost, and is suitable for large-scale production and application.

Description

technical field [0001] The invention belongs to the technical field of photocatalytic materials and their preparation. Specifically relate to a titanium dioxide (TiO2) with anatase structure 2 ) nanotube (TiNT) is an n-type semiconductor material, and boron-doped diamond is a p-type semiconductor material, and a p-n heterojunction photocatalytic material and a preparation method thereof. technical background [0002] TiO 2 Due to the unique physical and chemical properties of the material, it has potential application value in the fields of photocatalytic degradation of organic pollutants, photocatalytic hydrogen production from water, and solar cells. However, due to the fast recombination of photogenerated electron-hole pairs, TiO 2 The quantum yield is low, so the application in the field of photocatalytic degradation of organic pollutants is limited. In order to improve the TiO 2 Properties of photocatalytic materials, with TiO 2 Related heterojunction materials an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J37/02B01J23/06
Inventor 李红东苑举君吕宪义高世勇
Owner JILIN UNIV
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