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Preparation method of injector-shaped ZnO nanostructural array for field emission

A nanostructure and injector technology, which is applied in chemical instruments and methods, single crystal growth, liquid phase epitaxial layer growth, etc., can solve the difficulty of effective control of the aspect ratio of the tip part of the one-dimensional ZnO nanostructure, high reaction temperature , Difficult to large-scale industrial production and other issues, to achieve the effect of easy industrial scale implementation, simple and easy operation process, and improved electrical conductivity

Inactive Publication Date: 2012-04-18
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods usually require high reaction temperature and long reaction time, high cost, low efficiency, and difficult to large-scale industrial production; or the prepared array structure is difficult to separate from the template, resulting in poor electrical contact with the substrate, Difficulty obtaining ideal field emission performance
In addition, these synthesis methods are also difficult to effectively control the aspect ratio of the tip part of the one-dimensional ZnO nanostructure.

Method used

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  • Preparation method of injector-shaped ZnO nanostructural array for field emission
  • Preparation method of injector-shaped ZnO nanostructural array for field emission
  • Preparation method of injector-shaped ZnO nanostructural array for field emission

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Experimental program
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Effect test

Embodiment 1

[0019] (1) Dissolve analytically pure zinc nitrate hexahydrate into distilled water, and keep stirring to prepare Zn 2+ A clear solution with a concentration of 0.005mol / L, and the pH of the solution is controlled at 5.0±0.1 with NaOH or HCl, and the resulting solution is recorded as A;

[0020] (2) Use the A solution prepared above as the electrolyte, and use a three-electrode electrochemical deposition system (conductive glass as the working electrode, a platinum electrode as the counter electrode, and a saturated calomel electrode as the reference electrode) to directly grow ZnO on the conductive glass substrate. Nanopillar array; the deposition potential used is -0.5V, the electrolyte temperature is 50°C, and the deposition time is 30min;

[0021] (3) Dissolve analytically pure zinc nitrate hexahydrate, hexamethylenetetramine and sodium fluoride in a beaker containing distilled water in sequence, and keep stirring, the molar concentration ratio of the three is 1:1:1, where...

Embodiment 2

[0025] (1) Dissolve analytically pure zinc nitrate hexahydrate into distilled water, and keep stirring to prepare Zn 2+ A clear solution with a concentration of 0.005mol / L, and the pH of the solution is controlled at 5.0±0.1 with NaOH or HCl, and the resulting solution is recorded as A;

[0026] (2) Use the A solution prepared above as the electrolyte, and use a three-electrode electrochemical deposition system (conductive glass as the working electrode, a platinum electrode as the counter electrode, and a saturated calomel electrode as the reference electrode) to directly grow ZnO on the conductive glass substrate. Nanopillar array; the deposition potential used is -1.1V, the electrolyte temperature is 50°C, and the deposition time is 30min;

[0027] (3) Dissolve analytically pure zinc nitrate hexahydrate, hexamethylenetetramine and sodium fluoride in a beaker containing distilled water successively, and keep stirring, the molar concentration ratio of the three is 1:1:2, wher...

Embodiment 3

[0031] (1) Dissolve analytically pure zinc nitrate hexahydrate into distilled water, and keep stirring to prepare Zn 2+ A clear solution with a concentration of 0.005mol / L, and the pH of the solution is controlled at 5.0±0.1 with NaOH or HCl, and the resulting solution is recorded as A;

[0032] (2) Use the A solution prepared above as the electrolyte, and use a three-electrode electrochemical deposition system (conductive glass as the working electrode, a platinum electrode as the counter electrode, and a saturated calomel electrode as the reference electrode) to directly grow ZnO on the conductive glass substrate. Nanopillar array; the deposition potential used is -1.5V, the electrolyte temperature is 50°C, and the deposition time is 30min;

[0033](3) Dissolve analytically pure zinc nitrate hexahydrate, hexamethylenetetramine and sodium fluoride in a beaker containing distilled water successively, and keep stirring, the molar concentration ratio of the three is 1:1:2, where...

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Abstract

The invention relates to a preparation method of an injector-shaped ZnO nano-structural array for field emission, which is a two-step synthesis method based on an aqueous solution system. The method comprises the following steps: firstly, adopting a electrochemical deposition method to directly grow a ZnO nano-column array on a conductive glass substrate; and secondly, adopting the aqueous solution chemical growing method to perform epitaxial growth of nano-needles on the original end surfaces of the ZnO nano-columns. The injector-shaped ZnO nano-structural array is prepared by the two-step synthesis method, thus the adhesive strength of the ZnO nano-structural array on the conductive substrate can be ensured, the electrical conductivity can be increased, the controllable growth of the pointed nanostructure, which is beneficial for electron emission can be realized and the field emission performance of the array structure can be improved.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials, semiconductor materials and devices, and specifically relates to the preparation technology of ZnO nano-array structures, in particular to a preparation method of a syringe-shaped ZnO nano-structure array for field emission. Background technique [0002] ZnO is a wide bandgap II-VI semiconductor material with a bandwidth of 3.37eV and an exciton binding energy of up to 60meV at room temperature. It has excellent chemical properties, thermal stability, and good luminescence and photoelectric conversion properties. It has been widely used in optoelectronics, especially in nano optoelectronic devices. Therefore, studying the growth mechanism of ZnO nanomaterials and controlling their morphology, size and scale distribution are the basis for preparing and improving functional nanodevices. So far, various ZnO nanostructures have been prepared, especially nanowires [J.Nanosci.Nanotech...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D9/04C30B19/12C30B29/16
Inventor 徐峰孙立涛董方洲毕恒昌尹奎波万能
Owner SOUTHEAST UNIV
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