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Li-containing alpha-sialon fluorescent substance and method for manufacturing same, illumination device, and image display device

A manufacturing method and technology for lighting appliances, which are applied in the field of sialon-based phosphors, can solve problems such as low melting points, and achieve high fluorescence intensity effects

Inactive Publication Date: 2013-09-04
UBE IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Regardless of the disclosure of Patent Documents 5 and 6, regarding the growth of primary particles of Li-containing α-sialon, since Li is an element that is easily evaporated, and Li-related substances are easy to produce compounds with relatively low melting points, it cannot Considered in the same way as Ca-α-sialon

Method used

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  • Li-containing alpha-sialon fluorescent substance and method for manufacturing same, illumination device, and image display device
  • Li-containing alpha-sialon fluorescent substance and method for manufacturing same, illumination device, and image display device
  • Li-containing alpha-sialon fluorescent substance and method for manufacturing same, illumination device, and image display device

Examples

Experimental program
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Embodiment 1~8

[0142] Amorphous silicon nitride powder obtained by reacting lithium carbonate powder, lithium nitride powder, europium oxide powder, aluminum nitride powder, silicon tetrachloride, and ammonia, or a specific surface area of ​​about 9.2 m 2 The crystalline silicon nitride of / g was weighed so that it might become the composition of Table 1. Table 1 shows the raw material composition in mol %, and Table 2 shows the raw material composition in wt %. The nylon balls for stirring and the weighed powder were put into a container, and mixed with a vibration mill under nitrogen atmosphere for 1 hour. After mixing, the powder was taken out and filled in a crucible made of boron nitride. The packing density at this time is about 0.5 g / cm when crystalline silicon nitride is used 3 , about 0.18g / cm when amorphous silicon nitride is used 3 . It was placed on a resistance heating furnace and heated from room temperature to 1000°C for 1 hour at a heating rate of 200°C / h, 2 hours from 10...

Embodiment 9

[0157] The phosphor of Example 2 and the epoxy resin were mixed at a weight ratio of 20:100 to prepare a phosphor paste. This was applied to a blue light-emitting diode (wavelength: 470 nm) mounted on an electrode, heated at 120° C. for 1 hour, and further heated at 150° C. for 12 hours to cure the epoxy resin. The obtained light-emitting diode was lit, and it was confirmed that it was daylight-colored white.

Embodiment 10

[0159] The phosphor of Example 2 and the separately prepared red phosphor CaAlSiN 3 Mixing is performed to adjust the color tone of the phosphor. The results are shown in Table 5. According to the change in hue shown in Table 5, in combination with blue LEDs, white LEDs ranging from daylight color to light bulb color can be produced.

[0160] Table 1

[0161]

[0162] Table 2

[0163]

[0164]

[0165]

[0166] table 5

[0167]

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Abstract

Providing a phosphor having high fluorescence intensity and being capable of emitting a fluorescence color thereby making it possible to produce a white light-emitting diode of daytime white color or daylight color by combining it with a blue LED, a Li-containing ±-sialon-based phosphor represented by the formula: Li x Eu y Si 12-(m+n) Al (m+n) O n+´ N 16-n-´ (wherein assuming that the average valence of Eu is a, x+ya+´=m; 0.45‰¤x<1.2, 0.001‰¤y‰¤0.2, 0.9‰¤m‰¤2.5, 0.5‰¤n‰¤2.4, and ´>0). The average aspect ratio of the primary particle as measured by the image analysis of the scanning electron micrograph can be 2 or less and the average particle diameter D particle can be from 1 to 3.0 µm; or the aspect ratio of the primary particle as measured by the image analysis of the scanning electron micrograph can be 3 or less and the length of the short axis can be more than 3 µm.

Description

technical field [0001] The present invention relates to a photofunctional material having a function of converting a part of irradiated light into light of a wavelength different from the photofunctional material, and a method for producing the same. Specifically, it relates to a sialon-based phosphor activated by a rare-earth metal element suitable for light sources ranging from ultraviolet to blue. Moreover, it relates to the manufacturing method of the above-mentioned Sialon-based phosphor, a light-emitting device and an image display device using the same. Background technique [0002] In recent years, the development of white LEDs using blue light emitting diodes (LEDs) has been actively carried out by putting them into practical use. Compared with conventional white light sources, white LEDs have lower power consumption and longer lifespans, so they are being developed for use in backlights for liquid crystal panels, indoor and outdoor lighting equipment, and the like...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00C09K11/08C09K11/64
CPCC09K11/7728C09K11/7734H01L33/502Y02B20/181C09K11/0883Y02B20/00C09K11/77348H01L33/00
Inventor 坂田信一小田浩酒井拓马
Owner UBE IND LTD