Metal particle doped indium salt-based phosphor and preparation method thereof

A technology of indium salt and phosphor powder, applied in the field of phosphor powder, can solve the problems of reducing the luminous efficiency of phosphor powder, low voltage luminous efficiency, easy to decompose and emit gas, etc. Effect

Inactive Publication Date: 2012-02-01
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These phosphors have high luminous efficiency under the action of high-voltage electron beams (generally required voltage is generally above 3kV), but the luminous efficiency is not high under low voltage.
Among them, for the sulfide phosphor, under the bombardment of the electron beam, it

Method used

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  • Metal particle doped indium salt-based phosphor and preparation method thereof
  • Metal particle doped indium salt-based phosphor and preparation method thereof
  • Metal particle doped indium salt-based phosphor and preparation method thereof

Examples

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Example Embodiment

[0029] A preparation method of indium salt-based phosphor doped with metal particles, such as Figure 4 As shown, including the following steps:

[0030] S1, according to the general chemical formula Re' 1-x Re″InO 3 : The stoichiometric ratio of each element in yM, weighing the nanoparticles of M, the source compound of Re', the source compound of Re", and the source compound of indium; where Re' is one or two of Y, La, and Sc; Re" is one or two of Tm, Tb, Eu, Sm, Gd, Dy, Ce; M is one or two of Ag, Au, Pt, Pd; x is 0.001 to 0.2, y is 5 ×10 -5 ~1×10 -2 ;

[0031] S2. The weighed source compound of Re', the source compound of Re", and the source compound of In are dissolved in an aqueous alcohol solution to obtain a mixed solution;

[0032] S3. Adding the M nanoparticles to an aqueous solution containing a surface treatment agent to obtain surface-treated M nanoparticles;

[0033] S4. Add the surface-treated M nanoparticles to the mixed solution of step S2, stir, and then add citric...

Example Embodiment

[0043] Example 1

[0044] Preparation of Y by sol-gel method 0.999 Tm 0.001 InO 3 : 5×10 -4 Pt

[0045] Weigh 5.2 mg of chloroplatinic acid and dissolve it in 17 mL of ethanol. When it is completely dissolved, add 8 mg of sodium citrate and 1.2 mg of sodium lauryl sulfonate while stirring, and then slowly drop it into the solution with 0.4 mg of sodium borohydride. To 1×10 obtained in 10mL ethanol -3 mol / L sodium borohydride alcohol solution 0.4mL, after 5min reaction, add 1×10 -2 2.6 mL of mol / L hydrazine hydrate solution, after 40 minutes of reaction, 30 mL of Pt content is 5×10 -4 mol / L Pt nanoparticle sol. Weigh 0.15 g of PVP and add it to the Pt nanoparticle sol, and magnetically stir for 12 hours to obtain surface-treated Pt nanoparticles.

[0046] 0.01molY 0.999 Tm 0.001 InO 3 : 5×10 -4 Preparation of Pt: measure 10ml 1mol / L Y(NO 3 ) 3 , 1ml 0.01mol / L Tm(NO 3 ) 3 And 10ml 1mol / L In(NO 3 ) 3 Place the solution in a beaker, add 9ml of water and 30ml of ethanol mixed solution an...

Example Embodiment

[0047] Example 2

[0048] Preparation of La by sol-gel method 0.995 Sm 0.005 InO 3 :1×10 -3 Au

[0049] Weigh 7.6 mg of sodium borohydride and dissolve it in 10 mL of ethanol to obtain 10 mL of sodium borohydride alcohol solution with a concentration of 0.02 mol / L for use. Weigh 16.4mg of chloroauric acid and dissolve it in 7.5mL of ethanol. After it is completely dissolved, add 56mg of sodium citrate and 24mg of cetyltrimethylammonium bromide under stirring, and add to the mixed solution under magnetic stirring. Add 2.5mL of the sodium borohydride alcohol solution prepared above, and continue the reaction for 30 minutes to obtain a 10ml Au content of 4×10 -3 mol / L Au nanoparticle sol. Weigh 1g of PVP and add it to the Au nanoparticle sol, and magnetically stir for 8h to obtain the Au nanoparticle after surface treatment.

[0050] 0.01mlLa 0.995 Sm 0.005 InO 3 :1×10 -3 Preparation of Au: Measure 9.95ml 1mol / L LaCl 3 , 1ml0.05mol / L Sm(NO 3 ) 3 And 10ml 1mol / L In(NO 3 ) 3 Put the sol...

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Abstract

The invention belongs to the field of a light-emitting material, and discloses metal particle doped indium salt-based phosphor and a preparation method thereof. The general chemical formula of the indium salt-based phosphor is Re'1-xRe''InO3:yM; wherein Re' is one or two of Y, La and Sc; Re'' is one or two of Tm, Tb, Eu, Sm, Gd, Dy and Ce; M is one or two of Ag, Au, Pt and Pd nanoparticles; and x is 0.001-0.2; and y is 5*10-5 to 5*10-2. Metal nanoparticles are introduced into the indium salt-based phosphor, the light-emitting strength is greatly improved by surface plasmon resonance effects produced on metal surfaces, and the degree of improvement can reach 40 percent. Meanwhile, under low-voltage (0.5-3kV) excitation, the phosphor has the advantages of good light-emitting performance, high internal quantum efficiency, high chemical stability, good stability and the like.

Description

technical field [0001] The invention relates to the field of fluorescent powder, in particular to a rare earth ion-doped indium salt-based fluorescent powder containing metal particles for field emission display and a preparation method thereof. Background technique [0002] In recent years, field emission displays have attracted much attention due to their low operating voltage, low power consumption, no need for deflection yokes, no X-ray radiation, and resistance to radiation and magnetic field interference. However, there are relatively few phosphors suitable for low voltage, mainly ZnS:Ag, Cl, SrGa 2 S 4 : Ce, SrGa 2 S 4 :Eu, Y 2 o 2 S: Eu, Y 2 SiO 5 : Ce, ZnGa 2 o 4 : Mn, Y 2 SiO 5 : Tb, Y 3 al 5 o 12 :Tb and Y 2 o 3 : Eu et al. These phosphors have high luminous efficiency under the action of high-voltage electron beams (generally required voltage is generally above 3kV), but the luminous efficiency is not high under low voltage. Among them, for the ...

Claims

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Application Information

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IPC IPC(8): C09K11/78
Inventor 周明杰刘军马文波
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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