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Method for thinning grapheme layer by layer

A multi-layer graphene and graphene technology, applied in the field of two-dimensional material graphene, to achieve the effect of maintaining high quality

Active Publication Date: 2012-02-08
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Generally speaking, the layer number control of graphene is very important, but there are few reports on the technical route of layer-by-layer thinning by processing multi-layer graphene.

Method used

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  • Method for thinning grapheme layer by layer
  • Method for thinning grapheme layer by layer
  • Method for thinning grapheme layer by layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Embodiment 1: bilayer graphene is thinned into monolayer graphene

[0031] First of all, using aggregated graphite as raw material, in SiO 2 / Si substrate mechanical exfoliation to obtain bilayer graphene samples, in figure 1 Marked as 2L.

[0032] Plasma treatment process: put the sample into the cavity of the plasma asher, select the gas source as nitrogen, the gas flow rate as 100ml / min, the temperature as room temperature, the air pressure: 0.3mbar, and plasma bombardment for 10 seconds to obtain the damage of the top layer. bilayer graphene.

[0033] Annealing and thinning process: put the above-mentioned graphene sample into a tube furnace, and feed a high-purity argon flow of 200ml / min, and the furnace will heat up to 900°C within two hours; at this temperature, 5ml / min o 2 / Ar mixed gas for 5 minutes, and finally the tube furnace was naturally cooled to room temperature. Oxygen content in mixed gas 0.05wt%

[0034] Through the above process, double-layer g...

Embodiment 2

[0035] Embodiment 2: three-layer graphene is thinned into double-layer graphene

[0036]First of all, using aggregated graphite as raw material, in SiO 2 / Si substrate mechanically exfoliated to obtain a three-layer graphene sample ( Figure 5 ).

[0037] First thinning:

[0038] The first plasma treatment process: put the sample into the cavity of the plasma asher, select the gas source as nitrogen, the gas flow rate as 200ml / min, the temperature as room temperature, the air pressure: 0.5mbar, and plasma bombardment for 15 seconds to obtain Three-layer graphene with damaged top layer.

[0039] The first annealing process: put the above-mentioned graphene sample into a tube furnace, and pass a high-purity argon flow of 200ml / min, and the furnace will heat up to 1000°C within two hours; at this temperature, pass 5ml / minO 2 / Ar mixed gas (wherein the oxygen content is 0.05wt%) for 10 minutes, and finally the tube furnace is naturally cooled to room temperature. Achieve th...

Embodiment 3

[0044] Embodiment 3: Two-layer graphene is thinned into double-layer graphene

[0045] Preparation of two-layer graphene: use metal copper foil as a substrate, grow at 1000° C., methane and hydrogen flow rate 50 sccm: 100 sccm, and normal pressure for 5 minutes to obtain double-layer graphene. Removing the copper foil substrate to transfer bilayer graphene to SiO 2 / Si substrate.

[0046] By the same plasma treatment and annealing thinning process as in Example 2, the double-layer graphene is thinned into a single layer, and the Raman result is the same as that in Example 1. Figure 4 similar.

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Abstract

The invention relates to a method for thinning grapheme layer by layer, which is characterized in that the method comprises the following steps of: firstly utilizing the plasma ashing technology, bombarding multi-layer grapheme by plasma and then annealing in a high-temperature furnace to remove the grapheme on the top layer so as to realize the effect of precisely thinning the grapheme. Through more times of plasma bombarding and high-temperature annealing, the effect of thinning the multi-layer grapheme layer by layer can be realized. The method is characterized in that in combination with the grapheme modification and grapheme anisotropic oxidation process conducted by adopting the plasma technology, the method accurately etches the multi-layer grapheme and can realize the effect of precisely thinning the multi-layer grapheme on a monoatomic layer and keep the excellent performance of the thinned grapheme. The method is applied to the preparation of a grapheme nanostructure, a grapheme electronic device and the like.

Description

technical field [0001] The invention relates to a method for thinning graphene layer by layer, which can cut the number of layers of multilayer graphene, and is mainly used for thinning multilayer graphene and preparing graphene devices. It belongs to the field of two-dimensional material graphene. Background technique [0002] In 2004, Geim and others at the University of Manchester in the United Kingdom discovered the two-dimensional material graphene, which quickly triggered a worldwide research boom. Geim and Novoselov were therefore awarded the 2010 Nobel Prize in Physics. Graphene is a new and exotic material due to its unique properties, including thinnest, strongest, high thermal conductivity, high hardness, high electron mobility, zero effective mass, ballistic transport at room temperature, and higher current density than copper It is 6 orders of magnitude higher, and has huge potential applications in the fields of next-generation transistors, sensors, transparen...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 杨喜超谢晓明江绵恒丁古巧
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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