Production method of rectifier diode
A technology for rectifying diodes and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., and can solve the problem of affecting the surface alloy effect of the ohmic contact layer 200, poor ohmic contact of the alloy layer, and affecting the electrical performance of the device, etc. problem, to achieve the effect of increasing the effective current-carrying area, increasing the carrier concentration in the P region, and improving the electrical performance of the device
Inactive Publication Date: 2013-09-04
SICHUAN TAIJING MICROELECTRONICS
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0014] 6. Mesa corrosion
Due to the principle of diffusion, impurities in the P+ layer 201 will continue to migrate to the inside, affecting the surface alloy effect of the ohmic contact layer 200. Such an alloy layer has poor ohmic contact and affects the electrical performance of the device.
[0022] 2. The grain shape of the rectifier diode manufactured by the traditional method is a rectangular prism, the angle between the N region and the P is 180°, and the PN junction is just at the position of the prism close to the bottom surface. When coating the protective layer, the The thickness of the cladding layer is small, which is easy to cause voltage breakdown failure
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0061] In this example, the manufacturing process of rectifier diodes is as follows: Figure 4 shown, including:
[0062] Diffusion
[0063] Select N-type monocrystalline silicon wafers, prepare phosphorus-containing emulsion (phosphorus source), coat the phosphorus-containing emulsion on one side of the silicon wafer, put the silicon wafer coated with phosphorus source into a clean oven to dry the phosphorus source solvent. The dried silicon wafers can be loaded into boats, and the phosphorus side of the silicon wafers is placed in the quartz boats, and about 750 pieces are placed in each boat. Push the quartz boat step by step into the diffusion furnace for diffusion to obtain the N+ layer. After the diffusion time is up, pull out the quartz boat step by step from the diffusion furnace to cool down. After cooling, chemically split and clean the surface. The cleaned silicon wafers are sent to the sand blasting workshop for processing, and the processed silicon wafers are ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a production method of a rectifier diode, which is used for improving a production technology in the prior art and improving device properties. The production method of the rectifier diode, provided by the invention, comprises the following steps of: in a diffusion process of pipe core production, forming a four-layer structure, namely comprising an N<+> layer, an N<-> layer, a P<-> layer and a P<+> layer, on an N-type mono-crystalline silicon wafer by using a secondary diffusion technology when impurities in a P area are diffused, to obtain a pipe core with the four-layer structure. Therefore, effective concentration of current carriers in the P area is improved; in addition, the alloy quality of an ohm contact layer on the surface is improved, the contact resistance is reduced, and the effective current-carrying area is improved. In the production method provided by the invention, the process flow is regulated; the pipe core is corroded before a lead wire is welded so that the appropriate crystalline grain shape is easy to obtain; and a PN combined table is formed before the lead wire is welded, so that the usage amount of chemical agents is decreased and the pollution of the diode industry is greatly reduced.
Description
technical field [0001] The invention relates to a semiconductor device, in particular to a method for manufacturing a rectifier diode. Background technique [0002] Semiconductor rectifier diodes (referred to as rectifier diodes, diodes) are electronic devices that are widely used. A rectifier diode is usually composed of a die (also known as a crystal grain), a lead wire and a cladding layer, among which the die has a corresponding function, specifically the PN junction. [0003] The traditional method of manufacturing rectifier diodes includes: chip diffusion, nickel plating, cutting lobes, welding leads, mesa corrosion, coating protective layer, plastic packaging and other processes. The process flow is as follows: [0004] 1. Chip selection [0005] Generally, silicon-based rectifier diodes use N-type single crystal silicon as the basic material. [0006] 2. Diffusion of chips [0007] On the N-type single crystal silicon wafer, 5-valent impurities and 3-valent impu...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329H01L21/28H01L21/285
CPCH01L24/01H01L2224/33
Inventor 李治刿张剑俞建李驰明
Owner SICHUAN TAIJING MICROELECTRONICS