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Sodium tantalate film ultraviolet light detector and preparation method thereof

An ultraviolet light and detector technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as excessive particle size of materials, and achieve the effect of low defect density, simple process and good crystallinity

Inactive Publication Date: 2012-03-07
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Preparation of NaTaO by Hydrothermal Method 3 Thin film, get rid of the shortcomings of sol-gel process that may lead to film cracking due to multiple coatings, and can also overcome the problem of excessive particle size of solid-phase reaction materials. At the same time, it is simple in large-scale preparation process, low in cost, and low in defect density. , UV detector matrix material with good crystallinity provides a new channel, so it has important application value

Method used

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  • Sodium tantalate film ultraviolet light detector and preparation method thereof
  • Sodium tantalate film ultraviolet light detector and preparation method thereof
  • Sodium tantalate film ultraviolet light detector and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0024] First, a layer of NaTaO with a thickness of 0.5 μm was grown on a clean metal substrate by hydrothermal synthesis. 3 film.

[0025] Dissolve 2 grams of sodium hydroxide in 14 milliliters of deionized water, then place the sodium hydroxide solution in the reaction kettle, put the tantalum sheet (16mm×12mm×1mm) in the reaction kettle and seal the reaction kettle, then put the reaction The kettle was placed in a resistance furnace, and the temperature was adjusted to 150°C and heated for 9 hours; the reactor was taken out and cooled to room temperature, and then the tantalum sheet was taken out, rinsed with deionized water, and then dried with nitrogen.

[0026] In the prepared NaTaO 3 The thin film is covered with a mask plate complementary to the interdigitated electrode structure. Use magnetron sputtering technology to sputter a layer of metal on the finger pattern: put the sample in a vacuum chamber and evacuate to 3.0×10 -3 Pa; then pass Ar gas, the sputtering pres...

Embodiment 2

[0029] A layer of NaTaO with a thickness of 1 μm was grown on a metal substrate by hydrothermal synthesis 3 film.

[0030] Dissolve 2.6 grams of sodium hydroxide in 14 milliliters of deionized water, then place the sodium hydroxide solution in the reaction kettle, put the tantalum sheet (16mm×12mm×1mm) into the reaction kettle and seal the reaction kettle, then put the reaction The kettle was placed in a resistance furnace, and the temperature was adjusted to 150°C and heated for 12 hours; the reactor was taken out and cooled to room temperature, and then the tantalum sheet was taken out, rinsed with deionized water, and then dried with nitrogen.

[0031] In the prepared NaTaO 3 The thin film is covered with a mask plate complementary to the interdigitated electrode structure. Use magnetron sputtering technology to sputter a layer of metal on the finger pattern: put the sample in a vacuum chamber and evacuate to 3.0×10 -3 Pa; then pass Ar gas, the sputtering pressure is 0.8...

Embodiment 3

[0034] A layer of NaTaO with a thickness of 2 μm was grown on a metal substrate by hydrothermal synthesis 3 film.

[0035]Dissolve 3 grams of sodium hydroxide in 14 ml of deionized water, then place the sodium hydroxide solution in the reaction kettle, put the tantalum sheet (16mm×12mm×1mm) in the reaction kettle and seal the reaction kettle, then put the reaction The kettle was placed in a resistance furnace, and the temperature was adjusted to 180°C and heated for 12 hours; the reactor was taken out and cooled to room temperature, and then the tantalum sheet was taken out, rinsed with deionized water, and then dried with nitrogen.

[0036] In the prepared NaTaO 3 The thin film is covered with a mask plate complementary to the interdigitated electrode structure. Use magnetron sputtering technology to sputter a layer of metal on the finger pattern: put the sample in a vacuum chamber and evacuate to 3.0×10 -3 Pa; then pass Ar gas, the sputtering pressure is 0.8Pa, the sputte...

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Abstract

The invention belongs to the field of semiconductor photoelectric detection technology, and particularly relates to a NaTaO3 (sodium tantalate) film ultraviolet light detector taking a NaTaO3 film as a base material and Au, Pt or Ni as a metal electrode and a preparation method thereof. A layer of NaTaO3 film is grown on metal tantalum, and a layer of metal is sputtered on the NaTaO3 film coveredwith a mask by the magnetron sputtering technology; and the mask has an interdigital electrode structure so as to form a metal interdigital electrode on the film. The NaTaO3 film ultraviolet light detector provided by the invention is simple to prepare, has low cost and is expected to produce in a large scale; and the NaTaO3 film ultraviolet light detector has good detection performance on the ultraviolet rays with wavelength of 220-330 nm.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photodetection, in particular to a sodium tantalate (NaTaO 3 ) film as the base material, NaTaO with Au, Pt or Ni as the metal electrode 3 Thin film ultraviolet photodetector and its preparation method. Background technique [0002] Ultraviolet detection technology is another emerging detection technology besides laser, infrared and visible light detection. The huge application prospect shown makes it a hot spot in the field of photoelectric detection in recent years. [0003] At present, the semiconductor materials for making ultraviolet detectors are mainly concentrated in gallium nitride, diamond film, silicon carbide and zinc oxide. Due to the difficulty in the preparation process of these materials and the complicated manufacturing process of the device, the development of ultraviolet detection technology is slow. In order to get rid of these problems, people are actively carrying o...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/18C23C22/64C23C14/35C23C14/18
CPCY02P70/50
Inventor 阮圣平张敏张海峰刘彩霞冯彩慧周敬然陈维友
Owner JILIN UNIV
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