Thin film capacitor and method of fabrication thereof

A capacitor and electrode technology, which is applied in the field of film capacitors and the manufacture of such capacitors, can solve the problems of lowering the oxygen partial pressure and the upper limit of the processing temperature, weakening the mechanical stability of the foil, reducing the conductivity and strength, etc.

Active Publication Date: 2014-06-11
CDA工艺有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the poor oxidation resistance and low melting point of copper-based compositions, together with their tendency to thermomigrate and outgas, severely lowers the upper limit of oxygen partial pressure and processing temperature for fabricating TFCs on copper substrates.
For example, when a copper electrical conductor is kept at a temperature above 100°C in air, it undergoes oxidation, which results in a decrease in conductivity and strength
Furthermore, when using copper as a thin metal foil, the thin cross-section weakens the mechanical robustness of the foil, making it very susceptible to handling damage in the form of wrinkles due to manufacturing steps before, during and after deposition of the dielectric layer

Method used

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  • Thin film capacitor and method of fabrication thereof
  • Thin film capacitor and method of fabrication thereof

Examples

Experimental program
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Effect test

example 1

[0056] A 75 micron thick Ni 270 foil in cold rolled condition from HPM (Lancaster PA) was cut into strips measuring 3" x 8.5". 10 mTorr Ar-4% H flowing through a cryogenically pumped stainless steel chamber 2 , the central 3" x 6" area of ​​the bar was resistively heated at 1000°C for 30 minutes. This approach results in a recrystallized microstructure comprising cylindrically bounded grains whose boundaries extend from the top surface to the bottom surface of the foil.

[0057] At this point the foil is secured to a plastic plate and connected to a DC power source, becoming the anode in an electrochemical cell; it is then partially submerged in 60 vol% H 2 SO 4 and 200 mL / L glycerin, leaving the top 1" x 3" area out of the bath. A 3″ x 8.5″ Ni 270 plate was connected to the other terminal of the DC power supply to serve as the cathode, which was then also immersed in the solution, facing the anode, with a spacing of 2″. Then thermostatically regulated by a helical plastic ...

example 2

[0064] As-cold rolled 75 μm thick Ni 270 foil from HPM (Lancaster, PA) was cut into strips measuring 3" x 8.5". The foil was then fixed to a plastic plate and connected to a DC power source, becoming the anode in an electrochemical cell, which was then partially submerged in 60 vol% H 2 SO 4 and 200 mL / L glycerin, leaving the top 1" x 3" area out of the bath. A 3″ x 8.5″ Ni 270 plate was connected to the other terminal of the DC power supply to serve as the cathode, which was then also immersed in the solution, facing the anode, at a distance of 2″. Then thermostatically regulated by a helical plastic coil The solution, the coil use circulating water maintained at 20°C by an external heat exchanger. The bath is also stirred evenly with bubbling nitrogen. Then at 300mA / cm 2 The Ni 270 substrate was electrochemically polished for 20 min. This protocol will produce a mirror-like surface with a roughness rms less than 20 nm for a surface profile sampling length of about 71 micr...

example 3

[0072] As-cold as-rolled 75 micron thick Ni 270 foil from HPM (Lancaster, PA) was cut into strips measuring 3" x 8.5". 10 mTorr Ar-4% H flowing through a cryogenically pumped stainless steel chamber 2 , the central 3" x 6" area of ​​the bar was resistively heated at 1000°C for 30 minutes. This approach results in a recrystallized microstructure comprising cylindrically bounded grains whose boundaries extend from the top surface to the bottom surface of the foil.

[0073] At this point the foil is secured to a plastic plate and connected to a DC power source, which becomes the anode in an electrochemical cell, which is then partially submerged in 60 vol% H 2 SO 4and 200 mL / L glycerin, leaving the top 1" x 3" area out of the bath. A 3″ x 8.5″ Ni 270 plate was connected to the other terminal of the DC power supply to serve as the cathode, which was then also immersed in the solution, facing the anode, at a distance of 2″. Then thermostatically regulated by a helical plastic co...

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Abstract

Methods for fabricating a capacitor are provided. In the methods, a dielectric may be formed on a metal (e.g. nickel) substrate, and a copper electrode is formed thereon, followed by the thinning of the metal substrate from its non-coated face, and subsequently forming a copper electrode on the thinned, non-coated face of the substrate.

Description

technical field [0001] The present invention relates to film capacitors and methods of making such capacitors. Background technique [0002] The semiconductor industry is developing embedded capacitors to meet increasing demands for miniaturization and faster clock speeds. These devices consist of a high permittivity dielectric layer sandwiched between a foil substrate electrode and a top electrode, where both electrodes are typically copper. Coating of thin dielectric layers on metal foils can be achieved by methods such as reactive sputtering, laser ablation, metal organic chemical vapor deposition, liquid source atomized chemical deposition, chemical solution deposition, spin or spray coating, or dipping. In virtually all cases, however, removal of their organic molecular components is preferred by thermal treatment of the organometallic precursors therein, followed by sintering and crystallization of the inorganic residues to provide dielectric layers with useful proper...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/33H01G4/002
CPCH01G4/085H01G4/008H05K2203/0361H01G4/33H05K1/09H01G4/12H01L28/40H05K2201/0338H05K1/162H05K2201/0355Y10T29/43H01L27/04
Inventor J·C·费格罗亚D·F·里尔顿
Owner CDA工艺有限责任公司
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