Medium-and-low-temperature solar selective absorption thin film and preparation method thereof

A technology that selectively absorbs and solar energy is applied in the field of solar photothermal conversion, which can solve the problems of reducing film performance and achieve low cost, strong practical value, and good process stability.

Active Publication Date: 2012-08-01
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But in the preparation of Ti-TiO by magnetron sputtering method x N y In the process, process instability such as cathode target ignition and anode disappearance caused by targe

Method used

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  • Medium-and-low-temperature solar selective absorption thin film and preparation method thereof
  • Medium-and-low-temperature solar selective absorption thin film and preparation method thereof
  • Medium-and-low-temperature solar selective absorption thin film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0041] This example describes the process of preparing a medium-low temperature solar selective absorption film on a pure aluminum substrate, and analyzes its performance.

[0042] Step 1: Pretreatment of the substrate: select pure aluminum foil (thickness 0.4mm) as the substrate of the absorbing coating, clean it with detergent, deionized water, acetone and alcohol for 10 minutes, and dry it with N2 gas. Put it into the vacuum chamber and wait for the vacuum to reach 2×10 -4 After Pa, it was baked at 300°C for 30 minutes, and then Ar plasma treatment was performed on the sample by a reverse sputtering device, wherein the Ar pressure was 0.45 Pa, and the treatment time was 10 minutes to obtain a pretreated substrate.

[0043] Step 2: Preparation of the infrared reflective layer: select the metal Cu target material, pass Ar gas into the vacuum chamber, and prepare the metal infrared reflective layer on the pretreated substrate at room temperature by DC magnetron sputtering meth...

Embodiment 2

[0054] This example describes the process of preparing a medium-low temperature solar selective absorption thin film on a pure aluminum substrate, and analyzes its performance.

[0055] Step 1: Pretreatment of the substrate: select pure aluminum foil (thickness 0.4mm) as the substrate of the absorbing coating, clean it with detergent, deionized water, acetone and alcohol in order for 10 minutes, and pass through N 2 After the air is dried, put it into the vacuum chamber and wait for the vacuum to reach 2×10 -4 After Pa, it was baked at 300°C for 30 minutes, and then Ar plasma treatment was performed on the sample by a reverse sputtering device, wherein the Ar pressure was 0.45 Pa, and the treatment time was 10 minutes to obtain a pretreated substrate.

[0056] Step 2: Preparation of the infrared reflective layer: select the metal Cu target material, pass Ar gas into the vacuum chamber, and prepare the metal infrared reflective layer on the pretreated substrate at room temperat...

Embodiment 3

[0063] This example describes the process of preparing a medium-low temperature solar selective absorption film on a copper substrate, and analyzes its performance.

[0064] Step 1: Select red copper (thickness 0.2mm) as the substrate of the absorbing coating, clean it with detergent, deionized water, acetone and alcohol in sequence for 10 minutes, and pass through N 2 After air drying, put it into a vacuum chamber. To be vacuumed to 2×10 -4 After Pa, it was baked at 300°C for 30 min, and then the sample was treated with Ar plasma by a reverse sputtering device, where the Ar pressure was 0.46 Pa, and the treatment time was 10 min. The copper substrate also serves as an infrared reflective layer.

[0065] Step 2: Preparation of diffusion barrier layer and absorbing layer: use Cr target, adopt reactive magnetron sputtering method, pass Ar gas and N into the vacuum chamber at the same time 2 gas, on the infrared reflective layer to prepare Cr x N diffusion barrier layer, wher...

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Abstract

The invention discloses a medium-and-low-temperature solar selective absorption thin film. The medium-and-low-temperature solar selective absorption thin film mainly comprises a diffusion blocking layer, an absorption layer and an anti-reflection layer, which are sequentially deposited on a substrate with an infrared reflection function, or the medium-and-low-temperature solar selective absorption thin film mainly comprises an infrared reflection layer, the diffusion blocking layer, the absorption layer and the anti-reflection layer, which are sequentially deposited on the substrate, wherein the infrared reflection layer comprises the components of copper (Cu), molybdenum (Mo) or silver (Ag); the diffusion blocking layer comprises the composite component of chromium and nitrogen; the absorption layer consists of one or two of chromium simple substance / chromium oxide multi-component phase and chromium simple substance / chromium oxynitride multi-component phase; and the anti-reflection layer is a silicon dioxide (SiO2) ceramic thin film. The medium-and-low-temperature solar selective absorption thin film is high in solar spectrum absorption rate, low in infrared emissivity, high in heat stability and high in weather resistance and can be used in medium-and-low-temperature atmospheric environment of below 278 DEG C for a long time. The invention also discloses a preparation method for the medium-and-low-temperature solar selective absorption thin film. The preparation method employs a magnetron sputtering method and is simple in process, low in cost, high in stability and applicable to industrial large-area preparation.

Description

technical field [0001] The invention relates to the technical field of solar photothermal conversion, in particular to a medium-low temperature solar selective absorption film and a preparation method thereof. Background technique [0002] The solar selective absorption film layer needs to have high absorptivity (α) in the solar spectral range (0.35-2.5 μm), and low thermal emissivity (ie infrared emissivity, ε) in the mid-to-far infrared region (2.5-25 μm). The solar selective absorption film layer is the core part of the solar collector core, which directly affects the heat collection efficiency and processing cost of the solar water heater. The preparation process of the solar selective absorbing film has undergone process upgrading from simple spraying, chemical solution coating to vacuum evaporation and magnetron sputtering deposition. Among them, paint coatings were developed earlier, and commercialized products include: PbS / asphalt paint, PbS / ethylene propylene rubbe...

Claims

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Application Information

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IPC IPC(8): F24J2/48C23C14/35C23C14/06C23C14/08C23C14/14B32B9/04B32B15/00
CPCY02E10/40F24S70/225Y02P80/20
Inventor 刘志敏曹鸿涛吴亮梁凌燕孙喜莲
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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