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Preparation method for silicon dioxide block layer used for I-III-IV compound solar cell

A technology of I-III-IV and solar cells, applied in the field of solar cells, can solve the problems of reduced cell efficiency and achieve the effects of reduced cross-sectional area, increased barrier efficiency, and low process temperature

Active Publication Date: 2015-02-18
徐东
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Generally, the thickness of the barrier layer is 3 μm, but even if there is a barrier layer, due to the limited thickness, there will always be considerable heteroatoms such as Fe diffused into the absorber layer, which will reduce the battery efficiency. Therefore, the CIGS battery with stainless steel as the substrate The highest efficiency is 17.4%, which is still far behind the efficiency record of 19.9% ​​for glass substrate CIGS cells

Method used

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  • Preparation method for silicon dioxide block layer used for I-III-IV compound solar cell
  • Preparation method for silicon dioxide block layer used for I-III-IV compound solar cell

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preparation example Construction

[0016] The embodiment of the present invention is achieved in this way, and provides a method for preparing a silicon dioxide barrier layer for I-III-IV compound solar cells, which includes the following steps:

[0017] S01: Prepare an acid catalyst solution of alkyl orthosilicate, the acid catalyst solution of alkyl orthosilicate contains a molar ratio of 1:(1~5):(0.5~3):(0.001~0.1) Alkyl orthosilicate, isopropanol, H 2 O and HCl;

[0018] S02: Place the acid catalyst solution of the alkyl orthosilicate for 0.5-6h, and then add NH 4 OH solution to obtain silica sol, wherein the alkyl orthosilicate, isopropanol, H 2 The molar ratio of O and HCl is 1:(3-9):(1-6):(0.001~0.1), the NH 4 The molar ratio of OH to HCl is 1:1~4:1;

[0019] S03: Coating silica sol on the medium in an isopropanol atmosphere;

[0020] S04: Continue to age the medium coated with silica sol in an isopropanol atmosphere for 5 to 75 minutes, and then soak in an isopropanol solution to age to obtain an aged gel film;...

Embodiment 1

[0030] Under the rapid stirring of a magnetic stirrer, add H dropwise to the mixture of TEOS and isopropanol 2 A mixture of O, HCl and isopropanol to make TEOS: isopropanol: H 2 The molar ratio of O:HCl is 1:3:1:1.8×10 -3 ; After standing for 2h, add H dropwise to the above solution 2 O, NH 4 The mixture of OH and isopropanol makes TEOS: isopropanol: H 2 O:HCl:NH 4 The molar ratio of OH is 1:3:4:1.8×10 -3 : 3.6×10 -3 , To obtain silica sol. Coat a clean silicon wafer with a certain viscosity of silica sol in an isopropanol atmosphere, continue aging in an isopropanol atmosphere for 15 minutes, and then soak in an isopropanol solution for 1 day. The aged wet gel film passes through the N 2 In the atmosphere, the rapid heating and drying in the rapid heat treatment furnace is carried out. The heating process is a heating rate of 20°C / s, rising to 300°C, and then maintaining at this temperature for 30 minutes to obtain the I-III-IV group compound solar cell silica Barrier layer, f...

Embodiment 2

[0032] Under the rapid stirring of a magnetic stirrer, add H dropwise to the mixture of methyl orthosilicate and isopropanol 2 A mixture of O, HCl and isopropanol to make TEOS: isopropanol: H 2 The molar ratio of O:HCl is 1:1:0.5:1×10 -3 ; After standing for 6h, add H dropwise to the above solution 2 O, NH 4 The mixture of OH and isopropanol makes TEOS: isopropanol: H 2 O:HCl:NH 4 The molar ratio of OH is 1:6:6:1×10 -3 : 3×10 -3 , To obtain silica sol. Coat a clean silicon wafer with a certain viscosity of silica sol in an isopropanol atmosphere, continue to age in an isopropanol atmosphere for 75 minutes, and then soak in an isopropanol solution for 3 days. The aged wet gel film passes through the N 2 Under the atmosphere, the rapid heating and drying in the rapid heat treatment furnace, the heating process is the heating rate of 10℃ / s, rise to 500℃, and then keep at this temperature for 75 minutes, and place it in a nitrogen and hydrogen mixed atmosphere for high temperature an...

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Abstract

A method for preparing a silicon dioxide block layer for a group I-III-IV compound solar cell comprises the following steps: preparing an acid catalysis solution, of ortho-silicic acid alkyl ester, that comprises ortho-silicic acid alkyl ester, ethanol, H2O, and acid, and adding NH4OH water solution or adding NH4OH water solution and ethanol after placement, so as to obtain silica sol; coating the silica sol on a medium, and obtaining a gel membrane after aging; heating and drying the aged gel membrane to obtain a silicon dioxide block layer for a group I-III-IV compound solar cell. The method is simple and is suitable for batch production, and the obtained silicon dioxide block layer can better block heteroatoms on a substrate of the solar cell from spreading.

Description

Technical field [0001] The invention belongs to the field of solar cells, and specifically relates to a method for preparing a silicon dioxide barrier layer for I-III-IV group compound solar cells. Background technique [0002] Normally, I-III-VI compound solar cells are deposited on sodium-containing glass, and the preparation temperature is about 550°C. The highest efficiency of the I-III-VI group compound solar cell prepared on a flexible substrate is the copper indium gallium selenide (CIGS) solar cell prepared on a stainless steel substrate, and its efficiency can reach 17.4%. According to the coefficient of thermal expansion, Kovar alloy (Fe / Ni / Co alloy) matches best with molybdenum, while titanium foil matches best with CIGS absorption layer. [0003] The efficiency record of the flexible I-III-VI compound solar cell is currently using stainless steel as the substrate. The main reason is that stainless steel is resistant to high temperatures and can be heated to above 1000°...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCC03C17/23H01L31/18C03C17/25C03C2217/213C03C2217/425C03C2218/113C09D1/02H01L31/0749Y02E10/541
Inventor 徐东徐永任昌义
Owner 徐东
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