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Chemical vapor deposition preparation method of nanocrystal/quantum dot sensitized crystalline silicon battery cell

A technology of chemical vapor deposition and sensitization of crystalline silicon, applied in electrical components, circuits, climate sustainability, etc., can solve the problems of high production cost, narrow energy band of single crystal silicon, cumbersome process, etc., to reduce damage, strengthen Absorbent effect, suitable for a wide range of effects

Inactive Publication Date: 2012-09-26
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main reasons for restricting the photoelectric conversion efficiency and cost of crystalline silicon cells mainly come from two aspects: single crystal silicon has a narrow energy band and can only absorb sunlight at 600-1000nm; "Form loss, resulting in electrical loss; at the same time, the reflection of part of the sunlight on the surface of the battery panel causes optical loss
In order to reduce these additional losses, technologies such as surface texturing, passivation layer setting, and partition diffusion are usually used to increase photon absorption. These manufacturing processes are cumbersome, involve multiple processes, and the production cost is high.

Method used

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  • Chemical vapor deposition preparation method of nanocrystal/quantum dot sensitized crystalline silicon battery cell
  • Chemical vapor deposition preparation method of nanocrystal/quantum dot sensitized crystalline silicon battery cell
  • Chemical vapor deposition preparation method of nanocrystal/quantum dot sensitized crystalline silicon battery cell

Examples

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Effect test

Embodiment 1

[0030] a) Prepare the cleaning solution according to the ratio of 28% ammonia water: 30% hydrogen peroxide: pure water volume ratio of 1:1:4, put the diffused monocrystalline silicon cell into the cleaning solution, ultrasonically clean for 10 minutes, take it out, and wash with pure water ;

[0031] b) Prepare the etching solution according to the ratio of 40% hydrofluoric acid: absolute ethanol volume ratio of 3:1, put the cleaned diffusion monocrystalline silicon cell into the etching solution, ultrasonically etch for 5 minutes, take it out, and wash with pure water;

[0032] c) Immerse the corroded single crystal silicon cell in a 0.5mol / L ammonium fluoride solution ultrasonically for 5 minutes to perform surface hydrogen capping treatment;

[0033] d) Put the hydrogen-terminated monocrystalline silicon cell into a 0.1mol / L tin tetrachloride aqueous solution, immerse it in an ultrasonic solution for 5 minutes, perform metal salt treatment, take it out, and put it into a vacuum dr...

Embodiment 2

[0038] a) Prepare the cleaning solution according to the ratio of 28% ammonia water: 30% hydrogen peroxide: pure water volume ratio of 1:1:3, put the diffused polysilicon cell into the cleaning solution, ultrasonically clean for 10 minutes, take it out, and wash with pure water;

[0039] b) Prepare the etching solution according to the ratio of 40% hydrofluoric acid: absolute ethanol volume ratio of 1:1, put the cleaned diffusion polysilicon cell into the etching solution, ultrasonically etch for 3 minutes, take it out, and wash with pure water;

[0040] c) Immerse the corroded polycrystalline silicon cell in a 0.5mol / L ammonium fluoride solution ultrasonically for 3 minutes to perform surface hydrogen capping treatment;

[0041] d) Put the hydrogen-terminated polysilicon cell into a 0.1mol / L tin tetrachloride aqueous solution, immerse it in an ultrasonic solution for 3 minutes, perform metal salt treatment, take it out, and put it into a vacuum drying oven;

[0042] e) According to th...

Embodiment 3

[0046] The preparation method of this embodiment is the same as that described in embodiment 1, except that in step b) an etching solution is prepared in a ratio of 40% hydrofluoric acid: anhydrous ethanol with a volume ratio of 2:1, and the cleaned diffusion single crystal The silicon cell was put into the etching solution, ultrasonically etched for 15 minutes, taken out, and washed with pure water.

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Abstract

The invention relates to a chemical vapor deposition preparation method of a nanocrystal / quantum dot sensitized crystalline silicon battery cell, belonging to the fields of semiconductor photoelectric materials and solar batteries. A nanocrystal / quantum dot sensitizing layer is deposited on the diffusion crystalline silicon battery cell by a chemical vapor deposition method; and the nanocrystals / quantum dots have a strong absorption action for sunlight, and thus, have the actions of reducing crystalline silicon battery surface reflection and enhancing the photoelectric properties of the crystalline silicon battery cell. The chemical vapor deposition method provided by the invention has the advantages of low raw material cost and wide application range, and is suitable for large-scale industrial production.

Description

Technical field [0001] The invention relates to a chemical vapor deposition preparation method of a nanocrystalline / quantum dot sensitized crystalline silicon cell sheet, and belongs to the field of semiconductor photoelectric materials and solar cells. Background technique [0002] In 2011, global photovoltaic production reached 37.2GW, of which crystalline silicon cells accounted for nearly 90% of the market share of all photovoltaic cell products. It is estimated that global photovoltaic production will reach 100GW in 2020, and crystalline silicon cells will still play a leading role. [0003] The theoretical conversion efficiency of crystalline silicon cells is about 31%, which is currently the most efficient and most mature photovoltaic device on the market. However, the maximum efficiency of crystalline silicon cells reported by the laboratory is 25%, and most of the cells produced on a large scale are limited to about 15%. On the other hand, due to the cumbersome battery m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 余锡宾浦旭鑫冯吴亮夏玉胜
Owner SHANGHAI NORMAL UNIVERSITY