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Polysilicon active layer-containing thin film transistor, manufacturing method thereof and array substrate

A thin-film transistor and active layer technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of increasing the manufacturing cost of polysilicon TFTs, increasing the preparation time of polysilicon TFTs, and saving masks and photolithography The effect of craft

Inactive Publication Date: 2012-10-03
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] It can be seen that the above-mentioned preparation method of polysilicon TFT requires two heat treatments, namely crystallization heat treatment and impurity activation heat treatment after ion implantation, which increases the preparation time of polysilicon TFT and increases the manufacturing cost of polysilicon TFT

Method used

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  • Polysilicon active layer-containing thin film transistor, manufacturing method thereof and array substrate
  • Polysilicon active layer-containing thin film transistor, manufacturing method thereof and array substrate
  • Polysilicon active layer-containing thin film transistor, manufacturing method thereof and array substrate

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Embodiment 1

[0053] figure 2 It is a flowchart of a method for manufacturing a TFT containing a polysilicon active layer according to Embodiment 1 of the present invention. This embodiment is used to form a polysilicon TFT with a top gate structure, refer to figure 2 , including the following steps:

[0054] Step 201: depositing a buffer layer on the substrate, depositing an amorphous silicon layer on the buffer layer, patterning the amorphous silicon layer, and forming an active layer including a source region, a drain region and a channel region;

[0055] refer to Figure 3A , first, on a transparent substrate 1 such as glass that has been cleaned in advance, PECVD (plasma enhanced chemical vapor deposition), LPCVD (low pressure chemical vapor deposition), APCVD (atmospheric pressure chemical vapor deposition), ECR-CVD (electron cyclotron resonance chemical vapor deposition) Vapor deposition) or sputtering to form the buffer layer 2 to prevent the impurities contained in the glass f...

Embodiment 2

[0079] Figure 4 It is a flowchart of a method for manufacturing a TFT containing a polysilicon active layer according to Embodiment 2 of the present invention. This embodiment is used to form a polysilicon TFT with a bottom gate structure, refer to Figure 4 , including the following steps:

[0080] Step 401: forming a gate electrode and a gate insulating layer on the substrate;

[0081] First, on a transparent substrate such as glass that has been pre-cleaned, the gate metal layer is deposited by sputtering, thermal evaporation or PECVD, LPCVD, APCVD, ECR-CVD, etc., and then wet etching or dry etching is used. A mask is formed by photolithography, the gate metal layer is etched to form a pattern, and a gate electrode is formed. Finally, a gate insulating layer is deposited on the substrate on which the gate electrode is formed by PECVD, LPCVD, APCVD or ECR-CVD.

[0082] The gate metal layer is made of conductive materials such as metal, metal alloys such as molybdenum, mo...

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Abstract

The invention discloses a method for manufacturing a polysilicon active layer-containing thin film transistor, a manufacturing method thereof and an array substrate. The method comprises the following steps of: depositing an amorphous silicon layer on a substrate; patterning the amorphous silicon layer; forming an active layer which comprises a source region, a drain region and a channel region; forming a gate insulating layer and a gate electrode on the upper part of the channel region; depositing an induced metal layer on the substrate on which the gate electrode is formed; doping impurities into the source region and the drain region in an ion injection way, wherein part of the induced metal is bombarded into the source region and the drain region when ions are injected; removing the induced metal layer; performing heat treatment on the doped active layer, so that impurities are activated, and the active layer is subjected to metal-induced crystallization and metal-induced lateral crystallization under the action of the induced metal; and forming a source electrode and a drain electrode. By the method, the preparation time for a polysilicon thin film transistor (TFT) can be shortened; and the manufacturing cost of the polysilicon TFT can be reduced.

Description

technical field [0001] The present invention relates to the manufacturing technology of thin-film transistor (TFT), particularly a kind of thin-film transistor containing polysilicon active layer used for display device such as liquid crystal display (LCD) or organic electroluminescent display (OLED), its manufacturing method and array substrate. Background technique [0002] Metal-induced crystallization (MIC) and metal-induced lateral crystallization (MILC) are a method of preparing low-temperature polysilicon (LTPS). Compared with existing technologies such as laser crystallization (ELA) and solid-phase crystallization (SPC), MIC technology and MILC technology have low crystallization temperature, short crystallization time, relatively simple equipment and manufacturing process, and are suitable for commercial mass production. [0003] Figure 1A to Figure 1F It is a cross-sectional view of the process of manufacturing a TFT containing a polysilicon active layer using th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/77H01L29/786H01L27/12
CPCH01L21/26526H01L27/1277H01L29/66757H01L29/78618H01L29/78675
Inventor 姜春生
Owner BOE TECH GRP CO LTD
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