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Method for preparing and transferring graphene transparent film

A technology of graphene film and transparent film, which is applied in the direction of graphene, chemical instruments and methods, gaseous chemical plating, etc., can solve the problems of difficulty in extraction, easy failure, cracks and protrusions in graphene film, and overcome impurities. , cost reduction effect

Active Publication Date: 2012-10-10
BTR NEW MATERIAL GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The mature process of making transparent conductive film in the prior art is obtained by physical vapor deposition using indium tin oxide ITO as the material. However, the content of indium on the earth is very small and extraction is difficult, and the annual output is less than 500 tons; and ITO is not resistant to acid Alkali, easy to fail in acid-base environment
After the graphene film is prepared by the CVD method, the method for transferring the graphene film in the prior art is to spin-coat an organic colloid or a high molecular polymer on the graphene film as a support layer, and then use iron salt or acid to corrode the bottom of the graphene film. The metal substrate used in the CVD process, after the graphene film with the support layer is transferred to the specified substrate, and then the support layer on the graphene film is dissolved with an organic solvent, so that the graphene film transferred to the substrate Not only a large number of metal particles remain on the surface, but also the graphene film prepared is not flat due to the deformation of the metal substrate due to the high temperature process of the CVD method, resulting in cracks and protrusions in the graphene film obtained after the final transfer, which cannot be in good condition with the substrate. touch

Method used

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Examples

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Comparison scheme
Effect test

preparation example Construction

[0016] The preparation and transfer method of a kind of graphene transparent thin film of the present invention, first prepare graphene thin film with CVD method on metal substrate, then spin-coat organic colloid or macromolecular polymer on graphene thin film as support layer, pass electric The chemical foaming method separates the graphene film and the metal substrate. After the graphene film is transferred to the specified substrate, the organic colloid or high molecular polymer is spin-coated on the support layer for the second time to make the graphene film and the substrate plane well. Combine, and finally remove the support layer to obtain the combination of the graphene film and the substrate, which specifically includes the following steps:

[0017] 1. Preparation of graphene film by CVD: Put the metal substrate into the quartz tube, put the quartz tube into the electric furnace, then pass in hydrogen and argon, and raise the temperature from room temperature to 500~50...

Embodiment 1

[0035] 1. Put a 25um thick copper foil into a quartz tube, insert the quartz tube into an electric furnace with a volume of 5L, and pass in hydrogen and argon. Raise the temperature from room temperature to 900°C, keep it for 20 minutes, then raise the temperature to 1100°C at a heating rate of 10°C / min, feed methane gas at 70 sccm, keep it for 10 minutes, turn off the methane gas, wait for the quartz tube to cool to room temperature, take out the copper foil and graphite Oxygen thin films are grown on the surface of copper foil.

[0036] 2. Fix the copper foil treated in the first step on the turntable of the homogenizer, drop an appropriate amount of PMMA on the graphene film, set the first stage speed to 400rpm, time 5s, second stage speed to 3000rpm, time 30s. After the gluing is completed, the copper foil is transferred to the heating platform, and the temperature is raised from room temperature to 60°C at a heating rate of 5°C / min, and heated for 10 minutes.

[0037] 3....

Embodiment 2

[0042] 1. Put a 25um thick nickel foil into a quartz tube, insert the quartz tube into an electric furnace with a volume of 10L, and pass in hydrogen and argon. Raise the temperature from room temperature to 1000°C, keep it for 20 minutes, feed acetylene gas at 250 sccm, keep it for 5 minutes, turn off the acetylene gas, wait for the quartz tube to cool down to room temperature, take out the nickel foil, and the graphene film grows on the surface of the nickel foil.

[0043] 2. Fix the nickel foil treated in the first step on the turntable of the homogenizer, drop an appropriate amount of PMMA on the graphene film, set the first stage rotation speed to 600rpm, time 10s, and second stage rotation speed to 5000rpm, time 60s. After the gluing is completed, the copper foil is transferred to the heating platform, and the temperature is raised from room temperature to 120°C at a heating rate of 5°C / min, and heated for 1min.

[0044] 3. Connect the electrolytic circuit, the nickel fo...

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Abstract

The invention discloses a method for preparing and transferring a graphene transparent film. The technical problem required be solved is that impurities, cracks and bumps after the graphene transparent film is transferred are required to be reduced. The preparing and transferring method disclosed by the invention comprises the steps of: carrying out chemical vapor deposition on the graphene film on a metal substrate, coating methyl methacrylate or photoresist to form a support layer; electrolyzing the graphene film and separating the metal substrate; and coating the methyl methacrylate or photoresist on the support layer, putting the support layer into acetone solution, and attaching the graphene film to an appointed substrate. Compared with the prior art, the film composed of the graphene film and the support layer is separated from the metal substrate by an electrochemical foaming method; the graphene film is transferred to an appointed substrate and then the graphene film well contacts the plane of the appointed substrate without the cracks by spin coating for second time; the metal substrate can be repeatedly used, and the cost of preparation of the graphene transparent film is reduced; the transferred graphene film is well contacted with the substrate, and the impurities are relatively few.

Description

technical field [0001] The invention relates to a method for preparing and transferring a transparent conductive film, in particular to a method for preparing and transferring a transparent conductive film based on graphene. technical background [0002] The mature process of making transparent conductive film in the prior art is obtained by physical vapor deposition using indium tin oxide ITO as the material. However, the content of indium on the earth is very small and extraction is difficult, and the annual output is less than 500 tons; and ITO is not resistant to acid Alkali, easy to fail in acid-base environment. Since its discovery in 2004, graphene has attracted widespread attention due to its advantages of the fastest electron migration, high hardness, and fast heat transfer. After the graphene film is prepared by the CVD method, the method for transferring the graphene film in the prior art is to spin-coat an organic colloid or a high molecular polymer on the graph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/56C25F5/00C01B31/02C01B32/186C01B32/194
Inventor 梁奇梅佳陈冠雄孔东亮
Owner BTR NEW MATERIAL GRP CO LTD
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