Preparation method of low-cost GaN epitaxial film

Abstract

The invention discloses a preparation method of a low-cost GaN epitaxial film and belongs to the technical field of photoelectric film material preparation. The preparation method comprises the following steps of 1, preparing an anhydrous gallium source precursor solution by dissolving gallium acetylacetonate powder in mixed solvents of acetic acid and propionic acid with heating and stirring, wherein a Ga ion concentration is in a range of 0.1 to 0.4mol / L, adding methanol into the mixed solution, wherein the volume of methanol is 1 / 2 of the total volume of the mixed solvents, carrying out low pressure distillation to remove impurity water, then stopping the low pressure distillation and the heating but stirring, and adding ethanolamine into the mixed solution without impurity water to obtain the anhydrous gallium source precursor solution having a concentration of 0.1 to 0.3mol / L, 2, carrying out precursor solution coating by carrying out spin coating of the anhydrous gallium source precursor solution obtained by the step 1 on a substrate, and 3, carrying out heat treatment by heating and then cooling to a room temperature to obtain the low-cost GaN epitaxial film. The preparation method needs simple equipment, has simple preparation processes which comprise preparing the anhydrous gallium source precursor solution, coating the anhydrous gallium source precursor solution on the substrate and carrying out sintering, and has a low cost and good repeatability.

Description

technical field [0001] The invention belongs to the technical field of photoelectric thin film material preparation, and in particular relates to a GaN epitaxial thin film growth method, which can be used for making GaN semiconductor photoelectric devices. Background technique [0002] GaN is the third-generation wide-bandgap semiconductor material following the first and second-generation semiconductor materials represented by Si and GaAs. GaN is a direct bandgap semiconductor material, which has the characteristics of large band gap, high thermal conductivity, low dielectric constant, and high electron drift saturation speed. Devices, such as GaN, can be used to prepare new devices such as metal semiconductor field effect transistors (MESFETs) and high electron mobility transistors (HEMTs). Utilizing its wide bandgap characteristics, blue, green, and ultraviolet light-emitting devices and photodetection devices can also be produced. For example, GaN can be used to prepare...

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Problems solved by technology

MOCVD technology has high crystallization quality, and the deposition process is less sensitive to temperature changes and has good repeatability. It is the mainstream technology for growing GaN thin films in the LED industry, but the technology equipment is expensive, and metal-organic source materials are mostly flammable and flammable Explosive and highly toxic substances, many parameters need to be controlled during the growth process; MBE technology can accurately control the thickness, structure and composition of the film, but the growth rate of the film in this technology is extremely slow, and the equipment cost is high, so it is not suitable for industrial It is limited by low growth temperature and lack of effective nitrogen source; PAD and Sol-Gel technology do not require vacuum equipment, simple process and low cost, but the repeatability of the above two technologies is poor

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