Rough black metal film for absorbing terahertz radiation and preparation method of rough black metal film

A technology of terahertz radiation and metal thin film, which is applied in the field of terahertz detection and imaging, can solve problems such as difficult control, and achieve the effects of increasing absorption rate, easy large-area preparation and integration, and simple and reasonable preparation process

Active Publication Date: 2013-03-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method is mainly used in the preparation of the absorption layer of the infrared focal plane detector, an

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rough black metal film for absorbing terahertz radiation and preparation method of rough black metal film
  • Rough black metal film for absorbing terahertz radiation and preparation method of rough black metal film
  • Rough black metal film for absorbing terahertz radiation and preparation method of rough black metal film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] A rough blackened metal film for absorbing terahertz radiation, the metal film is a terahertz absorbing layer prepared on the top layer of the detection unit of a terahertz microarray detector, such as image 3 shown.

[0044] The detection unit of the terahertz microarray detector such as image 3 -a shown. The array unit is prepared on the silicon wafer with the underlying readout circuit 4, wherein the readout circuit has an interface 5 with the subsequent MEMS device, and then grows a sacrificial layer 6, a supporting layer 7, metal electrodes and leads 8, and a sensitive film 9 etc. and graph them separately. The sacrificial layer material is a photosensitive polyimide (PSPI) material; the support layer material is composed of a composite film of silicon nitride and silicon oxide; the metal electrode is a nickel-chromium alloy; and the sensitive film is a vanadium oxide film.

[0045] The aluminum metal thin film 10 is prepared by magnetron sputtering. Adjust t...

Embodiment 2

[0050] A rough blackened metal film for absorbing terahertz radiation, the metal film is a terahertz absorbing layer prepared on the top layer of a lithium tantalate crystal sheet sensitive element, such as Figure 4 shown.

[0051] Lithium tantalate crystal flake sensitive components such as Figure 4 -a shown. The pre-production process is as follows: prepare the lower electrode 13 on the lithium tantalate wafer 12, bond the lithium tantalate wafer to the silicon substrate 15 with BCB polymer material 14, thin the lithium tantalate wafer by grinding and polishing, The upper electrode 16 is prepared, and then a layer of dielectric film 17 is prepared on the upper electrode.

[0052] The aluminum metal thin film 18 is prepared by an evaporation method. Adjust the process parameters to control the film thickness to 20nm, such as Figure 4 -b shown.

[0053] The aluminum thin film was physically bombarded by reactive ion etching. The bombardment gas is SF 6 Gas, the gas f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a rough black metal film for absorbing terahertz radiation and a preparation method of the rough black metal film. An ultra-thin metal film is bombarded by plasma of a metal active etching agent, such as fluoro, and the surface of the metal film is rough through the physical bombardment of fluoro plasma. Simultaneously, the fluorinion energy and the fluorinion concentration are adjusted during the etching, the fluorinion is attached to the rough surface of the metal film, is diffused on the surface and reacts, and the metal film with enriched fluorinion is obtained. A large number of crystal defects of fluorinion are generated on the rough metal film surface after etching, the metal film surface is black, the structure of the black and rough metal film surface has the high surface-to-volume ratio and low reflectivity, the absorption performance and the efficiency of the terahertz radiation are effectively improved, the preparation process is simple, the Micro Electronic Mechanical System (MEMS) and the process are compatible, and the metal film and the method can be applied to the terahertz detection and imaging filed widely.

Description

technical field [0001] The invention relates to the technical field of terahertz detection and imaging, in particular to a rough blackened metal thin film for absorbing terahertz radiation and a preparation method thereof. Background technique [0002] Terahertz (Terahertz, THz) wave refers to electromagnetic radiation with a frequency between 0.1~10THz (wavelength 3mm~30??m), and its electromagnetic spectrum is between the microwave and infrared bands. Therefore, the terahertz system takes into account both electronics and optical systems The advantages. For a long time, due to the lack of effective THz radiation generation and detection methods, people's understanding of the nature of electromagnetic radiation in this band is so limited that this band is called the THz gap in the electromagnetic spectrum. This band is also the last frequency window in the electromagnetic spectrum to be fully studied. In recent years, due to the development of free electron laser and ultr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G02B5/00C23F1/12
Inventor 王军苟君杨明闫淼蒋亚东黎威志
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap