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Film system structure for enhancing Terahertz radiation absorption rate and preparation method thereof

A technology of terahertz radiation and film structure, which is applied in the field of film structure and its preparation to enhance the absorption rate of terahertz radiation, which can solve the problems of high thermal resistance, low reflectivity, hindering heat transmission, etc., so as to increase the terahertz radiation The effect of radiation absorption rate, improvement of film surface-to-body ratio, and simple and reasonable preparation process

Active Publication Date: 2014-09-24
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Black resins are also less reflective, but are thicker and have greater thermal resistance, which may impede the transfer of heat to sensitive films

Method used

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  • Film system structure for enhancing Terahertz radiation absorption rate and preparation method thereof
  • Film system structure for enhancing Terahertz radiation absorption rate and preparation method thereof
  • Film system structure for enhancing Terahertz radiation absorption rate and preparation method thereof

Examples

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Effect test

Embodiment 1

[0038] As shown in Figure 2, a film structure for enhancing the absorption rate of terahertz radiation includes a dielectric thin film and a terahertz absorbing layer, and the structure is deployed on the top layer of the detection unit of the terahertz microarray detector.

[0039] The detection unit of the terahertz microarray detector such as Figure 2-a shown. The array unit is prepared on the silicon wafer with the underlying readout circuit 4, wherein the readout circuit has an interface 5 with the subsequent MEMS device, and then grows a sacrificial layer 6, a supporting layer 7, metal electrodes and leads 8, and a sensitive film 9 etc. and graph them separately. The sacrificial layer material can be silicon oxide film or photosensitive polyimide (PSPI) material; the support layer material is composed of silicon nitride, silicon oxide or multi-layer composite film; the metal electrode is aluminum, titanium, nickel-chromium alloy, etc. ; Sensitive films are vanadium ox...

Embodiment 2

[0045] As shown in Fig. 3, a film structure for enhancing the absorption rate of terahertz radiation includes a dielectric film and a terahertz absorbing layer, and the structure is deployed on the top layer of the pyroelectric terahertz detection unit.

[0046] Pyroelectric terahertz detection unit such as Figure 3-a shown. The completed process is: remove a part of the semiconductor substrate 12 by chemical etching, and then prepare the silicon dioxide dielectric layer 13 , the lower electrode 14 , the lithium tantalate pyroelectric thin film 15 and the upper electrode 16 . Clean the top surface of the detection unit to remove surface contamination, and bake the substrate at 200°C to remove surface moisture and enhance the adhesion of the dielectric film.

[0047] The silicon oxide dielectric thin film 17 is prepared by PECVD frequency mixing growth technology. Two sets of power sources with different frequencies are used to work alternately, among which, the frequency of...

Embodiment 3

[0051] As shown in Figure 4, a film structure for enhancing the absorption rate of terahertz radiation includes a dielectric thin film and a terahertz absorbing layer, and the structure is developed on the top layer of the lithium tantalate crystal sheet sensitive element.

[0052] The preliminary preparation process of lithium tantalate crystal sheet sensitive element is as follows: Figure 4-a~Figure 4-c shown. The preparation process is as follows: the lower electrode 20 is prepared on the lithium tantalate wafer 19, and the lithium tantalate wafer is bonded to the silicon substrate 22 with a BCB polymer material 21, such as Figure 4-a Shown; Lithium tantalate wafer is thinned by grinding and polishing, such as Figure 4-b Shown; Prepare upper electrode 23, as Figure 4-c shown.

[0053] The silicon nitride dielectric thin film 24 is prepared by PECVD frequency mixing growth technology. Two sets of power sources with different frequencies are used to work alternately, ...

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Abstract

The invention discloses a film structure for enhancing the absorption rate of terahertz radiation and a preparation method thereof. The film structure is located on the top layer of a sensitive unit of a terahertz detector, and includes a dielectric thin film and a terahertz absorbing layer thereon. The dielectric film is a low-stress silicon nitride or silicon oxide film prepared by PECVD frequency mixing technology. The dielectric film is etched by reactive ion to a rough surface of micro-nano scale. The terahertz absorbing layer is sputtered by magnetron sputtering. prepared on rough dielectric films. Due to the rough surface structure of the dielectric film increases the surface-to-volume ratio of the terahertz absorbing layer, effectively enhancing the terahertz radiation absorption rate, and the preparation process is simple and reasonable, easy to prepare and integrate in large areas, and can be widely used in various terahertz detection and research applications. In the field of imaging technology, it provides strong support for the development of high-performance terahertz detectors.

Description

technical field [0001] The invention relates to the technical field of terahertz detection and imaging, in particular to a film structure for enhancing terahertz radiation absorption rate and a preparation method thereof. Background technique [0002] Terahertz refers to electromagnetic waves with a frequency in the range of 0.1-10THz (1 THz = 1012 Hz), and its corresponding wavelength range is 3mm-30μm, which is between millimeter waves and infrared waves. The development of terahertz science and technology depends on the development of basic disciplines such as physics, chemistry, materials science, optics, and microelectronics, and it also promotes these basic disciplines. It is recognized by the international scientific and technological community that terahertz is an important cross-cutting frontier field. For a long time, due to the lack of effective THz generation and detection methods, people's understanding of the properties of electromagnetic radiation in this ban...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B32B9/04B32B15/00G01J5/02
Inventor 王军蒋亚东苟君吴志明黎威志
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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