Preparation method of AlN/ZnO/InGaN/diamond/Si multilayer-structure surface acoustic wave filter
A technology of surface acoustic wave filtering and multi-layer structure, which is applied in the direction of metal material coating process, coating, electrical components, etc., can solve the problems of increasing non-radiative recombination centers, no piezoelectricity, low surface roughness, etc. Achieve the effect of good uniformity, high electromechanical coupling coefficient and low loss
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Embodiment 1
[0024] The Si substrate was ultrasonically cleaned with acetone, ethanol and deionized water, dried with nitrogen and sent to the hot-wire chemical vapor deposition reaction chamber, and the reaction chamber was evacuated to 9.0×10 -4 After Pa, heat the Si substrate to 500°C, and pass CH with a flow rate of 1.6 sccm into the reaction chamber 4 And H with a flow rate of 200sccm 2 , Control the microwave power to 650W, and deposit a 100nm thick diamond film on the Si substrate;
[0025] Rinse the above-mentioned diamond / Si substrate with deionized water, send it to the metal organic compound chemical vapor deposition reaction chamber, heat the diamond / Si substrate to 300°C, control the equipment with a microwave power of 650W, and flow into the reaction chamber respectively 0.6sccm of trimethylindium, 0.3sccm of trimethylgallium, and 100sccm of nitrogen, deposit an InGaN film with a thickness of 20nm on a diamond / Si substrate;
[0026] Then, argon and oxygen carrying diethylzinc were...
Embodiment 2
[0029] The Si substrate was ultrasonically cleaned with acetone, ethanol and deionized water, dried with nitrogen and sent to the hot-wire chemical vapor deposition reaction chamber, and the reaction chamber was evacuated to 9.0×10 -4 After Pa, heat the Si substrate to 500°C, and pass CH with a flow rate of 1.6 sccm into the reaction chamber 4 And H with a flow rate of 200sccm 2 , Control the microwave power to 650W, deposit a 200nm thick diamond film on the Si substrate;
[0030] Rinse the above-mentioned diamond / Si substrate with deionized water, send it to the metal organic compound chemical vapor deposition equipment, heat the diamond / Si substrate to 400℃, control the microwave power of the equipment to 650W, and pass the flow rate into the reaction chamber respectively. 1.0sccm of trimethylindium, 0.5sccm of trimethylgallium, and 100sccm of nitrogen, deposit an InGaN film with a thickness of 30nm on a diamond / Si substrate;
[0031] Then, argon and oxygen carrying diethylzinc a...
Embodiment 3
[0034] The Si substrate was ultrasonically cleaned with acetone, ethanol and deionized water, dried with nitrogen and sent to the hot-wire chemical vapor deposition reaction chamber, and the reaction chamber was evacuated to 9.0×10 -4 After Pa, heat the Si substrate to 500°C, and pass in CH with a flow of 1.6 sccm 4 And H with a flow rate of 200sccm 2 , Control the microwave power to 650W, and deposit a 300nm thick diamond film on the Si substrate;
[0035] Rinse the above-mentioned diamond / Si substrate with deionized water, send it to the metal organic compound chemical vapor deposition equipment, heat the diamond / Si substrate to 600℃, control the microwave power of the equipment at 650W, and pass the flow rate into the reaction chamber respectively. 2.0sccm of trimethylindium, 1.0sccm of trimethylgallium, and 150sccm of nitrogen, deposit an InGaN film with a thickness of 100nm on a diamond / Si substrate;
[0036] Then, argon and oxygen carrying diethylzinc are introduced into the ...
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