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A kind of oled device containing oxide thin film transistor

An oxide film and transistor technology, applied in the field of OLED devices, can solve problems such as low carrier mobility, and achieve the effects of high carrier mobility, good constant current characteristics, and improved aperture ratio.

Active Publication Date: 2015-09-16
KUNSHAN VISIONOX DISPLAY TECH +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The technical problem solved by the present invention is the problem that the carrier mobility of the thin film transistor formed by the zinc tin oxide thin film prepared by using 2-ethylhexanoate as the precursor material of tin in the prior art is relatively low, and further provides a A kind of OLED device containing zinc tin oxide thin film transistor prepared by solution method

Method used

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  • A kind of oled device containing oxide thin film transistor
  • A kind of oled device containing oxide thin film transistor
  • A kind of oled device containing oxide thin film transistor

Examples

Experimental program
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Embodiment 1-1

[0054] The preparation method of zinc tin oxide thin film described in the present embodiment, comprises the steps:

[0055] (1) Preparation of precursor solution

[0056] Dissolve the precursor material containing zinc ions-zinc acetate, the precursor material containing tin ions-2-ethyl stannous hexanoate and the cosolvent-diethanolamine in ethylene glycol monomethyl ether, fully dissolve to obtain the precursor Solution, stand for subsequent use, the mol ratio that zinc acetate and 2-ethylhexanoate and ethanolamine add is 1:1:3, wherein the total molar concentration of zinc acetate and 2-ethylhexanoate is 0.3 mol / L;

[0057] (2) Preparation of zinc tin oxide film

[0058] In a dust-free atmosphere, the precursor solution prepared in step (1) is coated into a thin film on the surface to be coated. The surface to be coated according to the present invention is a semiconductor layer. After the spin coating is completed, place it under heating Dry on the table, and start to ...

Embodiment 1-2

[0062] The preparation method of the zinc-tin oxide thin film described in this example is the same as that of Example 1-1, the only difference being that in the heat treatment step, the temperature is raised to 350°C at a heating rate of 30°C / min and then subjected to constant temperature treatment for at least After 20 minutes, it was naturally cooled to room temperature to obtain a zinc-tin oxide film.

Embodiment 1-3

[0064] The preparation method of the zinc-tin oxide thin film described in this example is the same as that of Example 1-1, the only difference being that in the heat treatment step, the temperature is raised to 550°C at a heating rate of 30°C / min and then subjected to constant temperature treatment for at least After 20 minutes, it was naturally cooled to room temperature to obtain a zinc-tin oxide film.

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Abstract

The invention belongs to the field of OLED (organic light-emitting diode) device, and relates to an OLED device with a control element composed of a film transistor containing zinc tin oxide. A preparation method of the zinc tin oxide of the film transistor comprises the following steps of dissolving a precursor material containing zinc ion, a precursor material containing tin ion and a co-solvent in a solvent, fully dissolving to obtain a precursor solution; and performing the heat treatment after coating the precursor solution on a to-be-coated face to form a film. The zinc tin oxide film obtained through the preparation method provided by the invention can enable the film transistor to obtain a greater charge carrier migration rate, and the OLED device containing the oxide film transistor has excellent luminescence property.

Description

technical field [0001] The invention belongs to the field of electronic devices, in particular to an OLED device containing a zinc-tin oxide thin film as a conductive layer TFT. Background technique [0002] Organic light-emitting devices (English full name organic lighting emitting display, referred to as OLED) have the advantages of active light emission, wide color gamut, fast response, wide viewing angle, high contrast ratio, planarization, etc., and are the development trend of the next generation of display and lighting technology. [0003] OLED display devices can be divided into passive matrix OLED (PMOLED) and active matrix OLED (AMOLED) according to the driving method; PMOLED adopts the scanning method, which has the characteristics of instantaneous high brightness, high power consumption, short life, and easy deterioration of display components. , not suitable for large-screen high-resolution lighting and other shortcomings, but due to the short design time of PMO...

Claims

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Application Information

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IPC IPC(8): H01L27/32H01L29/786H01L21/77
Inventor 邱勇段炼胡永岚张国辉董艳波王静
Owner KUNSHAN VISIONOX DISPLAY TECH
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