Method for preparing porous silicon-based one-dimensional nanowire gas sensitive element
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- TIANJIN UNIV
- Publication Date
- 2013-08-14
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a gas sensor, in particular to a method for preparing a micron-sized porous silicon-based one-dimensional tungsten oxide nanostructure gas sensor that can work at a lower temperature and is suitable for detecting nitrogen oxide gas. Background technique
[0002] With the rapid development of industrial technology and the continuous improvement of people's living standards, various gas pollutants brought about in the process of production and life have increased significantly. Nitrogen oxides (NO x ) as a highly toxic gas is the main source of acid rain and photochemical smog, which has posed a serious threat to human health and safety. Therefore, the detection of nitrogen oxide gas has become a research hotspot in recent years. In recent years, with the continuous development of nanotechnology, nanostructured gas sensor devices have achieved considerable development. Especially in order to meet the urgent needs of industrial ...