Semiconductor device connection high purity copper fine wire
A high-purity, semi-conductive technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., can solve problems such as impossibility to prevent oxygen penetration
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Embodiment 1
[0063] {Example 1}
[0064] The oxide layer of a copper fine wire preform having a diameter of 2 mm and made of copper with a purity of 99.99992% by mass consists of a 0.5-nm-thick outermost layer of copper dioxide and a 3-nm-thick sublayer of copper monoxide constitute. The preformed copper thin wire is continuously drawn to obtain a copper thin wire with a diameter of 0.2 mm (reference figure 1 ). as in figure 1 As clearly seen in the cross-sectional photographs of , even after a low-temperature heat treatment at 500 °C, there is still a microtexture in the copper matrix induced by wire drawing.
[0065] This thin copper wire was run at a speed of 100m / min through a vertical heat treatment furnace (700°C reading; length 50cm) with a forming gas atmosphere containing 5% hydrogen and 95% nitrogen, and in pure water at 20°C Cool in medium. After water cooling, it is wound on a bobbin; the oxide film of the high-purity copper fine wire has been thinned, and it consists of a...
Embodiment 2
[0072] {Example 2}
[0073] The oxide layer of a copper thin wire preform having a diameter of 5 mm and made of penta-nine-pure copper containing 20 mass ppm of silver, 2 mass ppm of iron and the balance of 99.9997 mass % of copper has a 0.5-nm- A thick outermost layer of copper dioxide and a 4-nm-thick sublayer of copper monoxide, similar to the fine wire preform of Example 1. This copper fine wire preform was continuously drawn to obtain a copper fine wire with a diameter of 0.5 mm. The cross-sectional structure of this thin copper wire is roughly similar to that in Figure 4 The cross-sectional structure shown in .
[0074] The thin copper wire was run at a speed of 50 m / min through a red hot (about 800°C) vertical heat treatment furnace (length 100 cm) containing a nitrogen atmosphere and cooled in pure water at 30°C. After water cooling, it was wound on a bobbin; similarly to the case of Example 1, the oxide film of the high-purity copper thin wire composed of a copper...
Embodiment 3
[0076] {Example 3}
[0077] Copper fine wire with a diameter of 5 mm and made of copper containing 5 mass ppm silver, 5 mass ppm iron, 2 mass ppm nickel, 5 mass ppm silicon, 10 mass ppm phosphorus, and the balance 99.9997 mass % copper The oxide layer of the preform had a 0.5-nm-thick outermost layer of copper dioxide and a 5-nm-thick copper monoxide sublayer. This copper fine wire preform was continuously drawn to obtain a copper fine wire with a diameter of 0.5 mm. The cross-sectional structure of this thin copper wire is roughly similar to that in Figure 4 The cross-sectional structure shown in .
[0078] The thin copper wire was run at a speed of 50 m / min through a red hot (about 800°C) vertical heat treatment furnace (length 100 cm) containing a nitrogen atmosphere and cooled in pure water at 30°C. After water cooling, it was wound on a bobbin; the oxide film of the high-purity copper thin wire composed of a copper dioxide layer and a copper monoxide layer was as thin...
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Abstract
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