Preparation method for copper foil current collector and application
A technology of current collector and copper foil, applied in the field of new material synthesis and preparation, can solve the problems of weak adhesion between copper foil and active material, complicated technology of coating a conductive carbon layer, affecting the utilization rate of electrode materials, etc. Effects of improved power density and low contact resistance
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[0029] Example one
[0030] A method for preparing a copper foil current collector includes the following steps:
[0031] (1) Provide copper foil with a thickness of 9μm, soak the copper foil in a hydrochloric acid solution with a concentration of 0.1 mol / L for 10 minutes to remove surface oxides, and then perform ultrasonic cleaning with ethanol and acetone for 20 minutes to remove oil stains on the surface. Inside the vapor deposition equipment, sealed;
[0032] (2) Pass 100sccm of hydrogen into the chemical vapor deposition equipment, start heating after exhausting the air, turn on the plasma equipment after heating to 1000°C (RF matcher power is 500w), pass in 200sccm of methane, keep it for 100min After the reaction is over, stop heating, turn off the plasma equipment, stop feeding methane, cool to room temperature under the protection of hydrogen, and stop feeding hydrogen to obtain a copper foil current collector with graphene grown on the surface.
[0033] figure 1 It is an ...
Example Embodiment
[0039] Example two
[0040] A method for preparing a copper foil current collector includes the following steps:
[0041] (1) Provide copper foil with a thickness of 15μm, soak the copper foil in a sulfuric acid solution with a concentration of 0.5 mol / L for 5 minutes to remove surface oxides, and then use ethanol and acetone ultrasonic cleaning for 20 minutes to remove surface oil stains and put it in the chemical Inside the vapor deposition equipment, sealed;
[0042] (2) Pass 50sccm of argon gas into the chemical vapor deposition equipment, start heating after exhausting the air, turn on the plasma equipment after heating to 800°C (RF matcher power is 500w), pass 50sccm of acetylene, keep After the reaction is completed for 300 minutes, stop heating, turn off the plasma equipment, stop passing acetylene, cool to room temperature under the protection of argon, and stop passing argon to obtain a copper foil current collector with graphene grown on the surface.
[0043] The copper fo...
Example Embodiment
[0044] Example three
[0045] A method for preparing a copper foil current collector includes the following steps:
[0046] (1) Provide copper foil with a thickness of 12μm, soak the copper foil in a nitric acid solution with a concentration of 0.3mol / L for 6 minutes to remove surface oxides, and then perform ultrasonic cleaning with ethanol and acetone for 20 minutes to remove oil stains on the surface. Inside the vapor deposition equipment, sealed;
[0047] (2) Pass 60sccm of nitrogen into the chemical vapor deposition equipment, start heating after exhausting the air, turn on the plasma equipment after heating to 900°C (RF matcher power is 500w), pass 100sccm of ethane, keep After the reaction is completed for 200 minutes, stop heating, turn off the plasma equipment, stop passing ethane, cool to room temperature under the protection of nitrogen, stop passing nitrogen, and obtain a copper foil current collector with graphene grown on the surface.
[0048] The copper foil current co...
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