Preparation method of Cu-Zn-In-S quantum dot luminescent thin film

A cu-zn-in-s, quantum dot luminescent technology, which is applied in the direction of luminescent materials, chemical instruments and methods, etc., can solve the problems of quantum dot agglomeration, increased difficulty, cumbersome synthesis process, etc., and achieves mild synthesis temperature and convenient operation , the effect of simple synthesis equipment

Active Publication Date: 2014-02-19
WENZHOU UNIVERSITY
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Problems solved by technology

Although the core-shell structure can significantly improve the quantum efficiency, its synthesis process is relatively cumbersome. Zhang et al. improved the preparation process, abandoned the core-shell structure on the basis of ensuring the quantum efficiency, and synthesized zinc blende Cu- Zn-In-S quaternary alloy nanocrystals (J. Zhang, R. Xie, W. Yang, Chem. Mater., 2011, 23, 3357-3361), the cationic precursor used is also acetate
[0003] Although the quantum dots prepared by the above method have good fluorescent properties, they also have some shortcomings: first, the precursors for the synthesis of Cu-Zn-In-S quantum dots are mostly long-chain molecules such as acetate, and the long-term The large steric hindrance and low activity of the chain structure will reduce the diffusion rate of Cu ions, which is not conducive to crystallization. The obtained quantum dots usually have only one crystal form; second, the synthesized quantum dots are usually stored in toluene, chloroform, etc. This increases the difficulty of applying quantum dots to devices such as LEDs, which limits their further development; third, solvents such as toluene and chloroform are extremely volatile, and the volatilization of solvents will cause quantum dots to agglomerate, making them The fluorescence performance is greatly attenuated

Method used

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  • Preparation method of Cu-Zn-In-S quantum dot luminescent thin film
  • Preparation method of Cu-Zn-In-S quantum dot luminescent thin film
  • Preparation method of Cu-Zn-In-S quantum dot luminescent thin film

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Experimental program
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Effect test

Embodiment 1

[0029] In the first step, weigh 3.96mg (0.04mmol) CuCl, 27.26mg (0.2mmol) ZnCl 2 , 44.24mg (0.2mmol) InCl 3 Place in a three-necked bottle, and add 0.2mmol oleic acid, 2mmol dodecanethiol, 8ml octadecene.

[0030] In the second step, under the conditions of magnetic stirring and argon protection, heat the mixed solution to 180°C to make CuCl, ZnCl 2 and InCl 3 Completely dissolve to form a clear and transparent solution. At this time, inject 4mL sulfur powder-oleylamine solution (sulfur powder concentration is 0.2mol / L) into the solution, adjust the temperature to 160°C, maintain the temperature, and let the reaction proceed for 90min to prepare Cu -Zn-In-S quantum dot solution.

[0031] In the third step, remove the heat source and cool to room temperature naturally, take 0.5ml of Cu-Zn-In-S quantum dot stock solution, add 4ml of absolute ethanol, and perform centrifugal purification on the Cu-Zn-In-S quantum dot stock solution.

[0032] The fourth step is to mix the puri...

Embodiment 2

[0037] The first step, weigh 2.48mg (0.025mmol) CuCl, 51.11mg (0.375mmol) ZnCl 2 , 44.24mg (0.2mmol) InCl 3 Place in a three-necked bottle, and add 0.2mmol oleic acid, 2mmol dodecanethiol, 8ml octadecene.

[0038] In the second step, under the conditions of magnetic stirring and argon protection, heat the mixed solution to 190°C to make CuCl, ZnCl 2 and InCl 3 Completely dissolve to form a clear and transparent solution. At this time, inject 4mL of sulfur powder-oleylamine solution (sulfur powder concentration is 0.2mol / L) into the solution, adjust the temperature to 170°C, maintain the temperature, and let the reaction proceed for 90min to prepare Cu -Zn-In-S quantum dot solution.

[0039] In the third step, remove the heat source and cool to room temperature naturally, take 0.5ml of Cu-Zn-In-S quantum dot stock solution, add 4ml of absolute ethanol, and perform centrifugal purification on the Cu-Zn-In-S quantum dot stock solution.

[0040] The fourth step is to mix the p...

Embodiment 3

[0045] In the first step, weigh 1.89mg (0.019mmol) CuCl, 240.89mg (0.381mmol) Zn (St) 2 , 44.24mg (0.2mmol) InCl 3 Place in a three-necked bottle, and add 0.2mmol oleic acid, 2mmol dodecanethiol, 8ml octadecene.

[0046] In the second step, under the conditions of magnetic stirring and argon protection, heat the mixed solution to 200°C to make CuCl, ZnCl 2 and InCl 3 Dissolve completely to form a clear and transparent solution. At this time, inject 4mL of sulfur powder-oleylamine solution (sulfur powder concentration is 0.2mol / L) into the solution, adjust the temperature to 220°C, maintain the temperature, and let the reaction proceed for 90min to prepare Cu -Zn-In-S quantum dot solution.

[0047] In the third step, remove the heat source and cool down to room temperature naturally, take 0.5ml Cu-Zn-In-S quantum dot stock solution, add absolute ethanol, and perform centrifugal purification treatment on the Cu-Zn-In-S quantum dot stock solution.

[0048] The fourth step is ...

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Abstract

The invention discloses a preparation method of a Cu-Zn-In-S quantum dot luminescent thin film. The preparation method comprises the following steps: (1) adding cuprous chloride, indium chloride, zinc salt, a capping agent and a surface coating agent to a non-polar high boiling point organic solvent so as to obtain a Cu, In and Zn mixed precursor solution, stirring and heating under the atmosphere of nitrogen or inert gas so as to form a clear transparent solution; (2) adding an oleylamine solution of sulfur to the clear transparent solution obtained in the step (1), and heating for reacting so as to prepare a Cu-Zn-In-S quantum dot solution; (3) separating so as to obtain Cu-Zn-In-S quantum dots; (4) mixing the prepared Cu-Zn-In-S quantum dots with a component A of an LED (Light Emitting Diode) pouring sealant; (5) uniformly mixing a component B of the LED pouring sealant with a mixture obtained in the step (4), removing air bubbles, then coating a product on a glass substrate, and curing at a room temperature so as to obtain the Cu-Zn-In-S quantum dot luminescent thin film. The fluorescence spectra of the Cu-Zn-In-S quantum dot luminescent thin film prepared by the method can be adjusted. The Cu-Zn-In-S quantum dot luminescent thin film has the excellent fluorescence property of the Cu-Zn-In-S quantum dots and the good machining property of an organic silicon adhesive AB.

Description

technical field [0001] The invention relates to the technical field of novel fluorescent materials, in particular to a method for preparing a copper-zinc-indium-sulfur (Cu-Zn-In-S) quantum dot luminescent film. Background technique [0002] As a new type of fluorescent nanocrystals (nanocrystals are also called quantum dots), copper indium sulfide (CuInS 2 ) Nanocrystals have the advantages of high luminous intensity, adjustable wavelength, and simple preparation process. Compared with common binary fluorescent quantum dots, they do not contain toxic and harmful elements, and their biocompatibility and toxicity are better than binary fluorescent quantum dots. point, has broad application prospects. Preparation of CuInS with wide luminescence range, adjustable luminescence peak position, high quantum efficiency (QY) and stable performance 2 Quantum dots, and to broaden its application field has become an urgent need for the synthesis of quantum dot materials. In order to s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/62
Inventor 向卫东骆乐谢翠屏王京杨海龙梁晓娟
Owner WENZHOU UNIVERSITY
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