Preparation method for polysilicon thin film with bridged crystal-grain structure
A technology of polysilicon thin film and bridging crystal grains, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as non-uniform brightness, discrete distribution of electrical characteristics, and uneven electrical characteristics
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Embodiment 1
[0046] This embodiment provides a method for forming a polysilicon film with bridging grain (BG) lines, including:
[0047] 1) A layer of PR 1075 photoresist is spin-coated on the surface of the polysilicon film. After the PR photoresist is spin-coated, the sample is heated to 90 degrees for soft baking. The heating time is 1 minute. The purpose of soft baking is to reduce the amount of photoresist. Solvent, from ~20% to ~5%, release the stress induced spin-coated film at the same time, after soft-baking, use ASM PAS5000 stepper photolithography machine to expose the photoresist to light with a wavelength of 365nm, and bake at 110°C After 1 minute, the sample was soaked in FHD-5 for 30 seconds for developing treatment. The photoresist exposed to the light was dissolved in the solution, and the part that was not exposed to the light remained as it was, so that the BG line pattern was transferred to the light. On the engraving (such as image 3 shown), forming a BG line pattern...
Embodiment 2
[0054] BG line patterning can also be achieved using laser interference lithography (LIL), which is easily realized on large-area substrates without the need for a mask. Laser interference lithography (LIL) is the method of choice for fabricating periodic and quasi-periodic patterns on a large area substrate.
[0055] Use based on Figure 5 The Lloyd Interferometry device is shown. The regular pattern is formed by interfering laser beams and reflected laser beams. Since the second laser beam is formed by a mirror very close to the substrate, this setup is less sensitive to vibrations than a true two-beam interference setup. The period of the interference pattern, as well as the resist grating recording on the substrate, is determined by the formula P=λ / (2sinθ). Using a 363.8nm light source, the period from 300nm to 1000nm can be easily adjusted.
[0056] This embodiment provides a method for forming a polysilicon film with bridging grain (BG) lines, including:
[0057] 1)...
Embodiment 3
[0065] Another way to achieve small-sized BG line patterns is nanoimprint lithography (NIL) technology. NIL is a simple photolithographic process with low cost, high volume production and high resolution. It is patterned by mechanical deformation of imprints on resist and subsequent processes. Resist imprints are usually printed from a monomeric or polymeric formulation in a thermal or UV curing process.
[0066] The principle of NIL is as follows Figure 9 As shown, a hard mold with a nanoscale undulating surface is pressed into a polymer material on a substrate, thereby forming a thickness contrast of high and low undulations on the polymer material. The thin residual layer of polymer material is intentionally left under the protruding part of the mold as a soft buffer layer to prevent the hard mold from directly affecting the substrate, and also effectively protect the delicate nanoscale undulating shape of the mold surface and the surface of the device . After NIL trea...
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