Organic light-emitting device and preparation method thereof
An electroluminescence device and electroluminescence technology, which are applied in the directions of organic semiconductor devices, materials of organic semiconductor devices, electric solid devices, etc., to achieve the effect of prolonging the life of the device, improving the lifespan, and excellent packaging effect.
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Embodiment 1
[0055] A method for preparing an organic electroluminescent device, comprising the following steps:
[0056] (1) Pre-treatment of ITO conductive glass substrate 1: put ITO conductive glass substrate 1 into acetone, ethanol, deionized water, and ethanol in sequence, ultrasonically clean them for 5 minutes, then blow dry with nitrogen, and dry them in an oven for later use; The cleaned ITO glass substrate 1 is subjected to surface activation treatment to increase the oxygen content of the conductive surface layer and improve the work function on the surface of the conductive layer; the thickness of the ITO conductive glass substrate 1 is 100nm;
[0057] (2) Preparation of functional layer and light-emitting layer:
[0058] Hole injection layer 2: Evaporate MoO on the ITO conductive glass substrate 1 3 Hybrid material obtained by doping NPB, MoO 3 The doping mass fraction is 25%, and the evaporation is carried out by high-vacuum coating equipment, and the vacuum degree during e...
Embodiment 2
[0074] A method for preparing an organic electroluminescent device, comprising the following steps:
[0075] (1), (2), (3) are the same as embodiment 1;
[0076] (4) Preparation of protective layer: NPB was prepared on the cathode layer by vacuum evaporation with a vacuum degree of 5×10 -5 Pa, the evaporation rate is The thickness is 300nm;
[0077] (5) Preparation of barrier layer:
[0078] (a) Preparation of the first sulfide layer: the first sulfide layer was prepared on the protective layer by reactive magnetron sputtering, and the material of the first sulfide layer was MoS 2 , the sputtering target is Mo, the gas is hydrogen sulfide and argon, the volume fraction of hydrogen sulfide in the mixed gas is 17%, the gas flow rate is 15 sccm, and the background vacuum is 2×10 -4 Pa, the thickness is 100nm;
[0079] (b) Preparation of the second sulfide layer: the second sulfide layer was prepared on the first sulfide layer by non-reactive magnetron sputtering, and the ma...
Embodiment 3
[0085] A method for preparing an organic electroluminescent device, comprising the following steps:
[0086] (1), (2), (3) are the same as embodiment 1;
[0087] (4) Preparation of protective layer: prepare Alq on the cathode layer by vacuum evaporation 3 , the vacuum degree is 8×10 -5 Pa, the evaporation rate is The thickness is 250nm;
[0088] (5) Preparation of barrier layer:
[0089] (a) Preparation of the first sulfide layer: the first sulfide layer was prepared on the protective layer by reactive magnetron sputtering, and the material of the first sulfide layer was TaS 2 , the sputtering target is Ta, the gas is hydrogen sulfide and argon, the volume fraction of hydrogen sulfide in the mixed gas is 10%, the gas flow rate is 12 sccm, and the background vacuum is 1×10 -5 Pa, the thickness is 120nm;
[0090] (b) Preparation of the second sulfide layer: the second sulfide layer was prepared on the first sulfide layer by non-reactive magnetron sputtering, and the mater...
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