Double-layer gate dielectric thin film transistor with electrochromism characteristic
An electrochromic, dielectric thin film technology, applied in the direction of transistors, circuits, electrical components, etc., can solve the problems of poor uniformity of polysilicon thin film transistors, difficulty in providing driving current for light-emitting devices, and high production costs, and achieves improved overall performance. The effect of mass production
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Embodiment 1
[0025] 1. Clean the ITO glass substrate.
[0026] 2. The silicon dioxide proton conductor film was prepared by plasma chemical vapor deposition technology; the reaction gases used were silane and phosphine, the concentration ratio was 9:1; argon gas was used for ignition; the oxygen flow rate used was 10 sccm; the radio frequency power used was 100 W; The deposition pressure is 30 Pa; the temperature used is room temperature; the thickness is 500 nm.
[0027] 3. The tungsten oxide film was prepared by sputtering. The target used was a tungsten target with a concentration of 99.99%. Argon gas was used for ignition, the oxygen flow rate used was 14 sccm, the radio frequency power was 100W, the deposition pressure was 0.1 Pa, and the thickness was 300 nm.
[0028] 4. Using magnetron sputtering technology, IZO was used as the target material, at room temperature, the reaction pressure was set to 1Pa, and the RF power was set to 100W to prepare a channel layer with a thickness ...
Embodiment 2
[0031] 1. Common glass substrates are cleaned.
[0032] 2. Using magnetron sputtering technology, ITO was used as the target material, at room temperature, the reaction pressure was set to 1Pa, and the radio frequency power was set to 100W to prepare the gate electrode with a thickness of 80 nm.
[0033] 3. The silicon dioxide proton conductor film was prepared by plasma chemical vapor deposition technology; the reaction gas used was silane and phosphine, the concentration ratio was 9:1; argon gas was used for ignition; the oxygen flow rate used was 10 sccm; the radio frequency power used was 200 W; The deposition pressure is 10 Pa; the temperature used is room temperature; the thickness is 1000 nm.
[0034] 4. The tungsten oxide film was prepared by sputtering. The target used was a tungsten target with a concentration of 99.99%. Argon gas was used for ignition, the oxygen flow rate was 14 sccm, the radio frequency power was 100W, the deposition pressure was 0.1Pa, and th...
Embodiment 3
[0038] 1. Rigorous cleaning of transparent polyamide substrates.
[0039] 2. Sputter the ITO thin film gate electrode; take ITO as the target, set the reaction pressure to 1Pa, the radio frequency power to 150W, and the thickness to 80 nm at room temperature.
[0040] 3. The silicon dioxide proton conductor film was prepared by plasma chemical vapor deposition technology; the reaction gas used was silane and phosphine, the concentration ratio was 9:1; argon gas was used for ignition; the oxygen flow rate used was 10 sccm; the radio frequency power used was 200 W; The deposition pressure is 30 Pa; the temperature used is room temperature; the thickness is 1500 nm.
[0041]4. The tungsten oxide film was prepared by sputtering. The target used was a tungsten target with a concentration of 99.99%. Argon gas was used for ignition, the oxygen flow rate was 10 sccm, the radio frequency power was 100W, the deposition pressure was 0.1 Pa, and the thickness was 500 nm.
[0042] 5. ...
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