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A kind of cadmium sulfide ceramic target material and preparation method thereof

A technology of ceramic target material and cadmium sulfide, which is applied in the field of solar photovoltaic materials, can solve the problems of reducing the conversion efficiency of solar cells, large surface roughness of CdS film, weak optical switching effect, etc., and achieves low production cost, high raw material utilization rate, The effect of uniform grain shape and size

Inactive Publication Date: 2017-01-18
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the preparation of CdS thin films by chemical water bath deposition method is widely studied, but the water bath method will cause a large amount of wastewater, and cadmium ions are heavy metal ions, and the problem of strong wastewater toxicity restricts the development of the water bath method.
In addition, the surface roughness of the CdS film prepared by the traditional chemical water bath method is large, the number of defects is large, and the optical switching effect is weak and other factors also seriously reduce its conversion efficiency as a solar cell, restricting the application of cadmium sulfide in solar cells.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] A cadmium sulfide ceramic target, the preparation method of which specifically comprises the following steps:

[0017] 1) Mixing: Add 3.0g of cadmium chloride into 30mL of hot water and stir to dissolve it, then evenly spray its aqueous solution on 97g of cadmium sulfide powder (powder particle size is 50-100μm), mix and stir evenly;

[0018] 2) Molding: Put the obtained mixture in a drying oven, dry at 50°C for 5 hours, and select 30-60 mesh particles through sieving; then, after aging in a closed container for 24 hours, carry out steel mold pressing;

[0019] 3) Sintering: Put the compacted body into a vacuum furnace at 800°C for sintering, keep it warm for 4 hours, and cool it down to room temperature naturally under vacuum conditions.

[0020] The density of the ceramic target prepared in this example reaches 94% of the theoretical density, the sintering linear shrinkage rate is 15.4%, the apparent porosity is 1.13%, the Shore hardness is 60HS, and the surface resis...

Embodiment 2

[0022] A cadmium sulfide ceramic target, the preparation method of which specifically comprises the following steps:

[0023] 1) Mixing: Add 1.5g of cadmium chloride into 30mL of hot water and stir to dissolve it, then evenly spray its aqueous solution on 98.5g of cadmium sulfide powder (powder particle size is 50-100μm), mix and stir evenly;

[0024] 2) Molding: Put the obtained mixture in a drying oven, dry at 50°C for 5 hours, and select 30-60 mesh particles through sieving; then, after aging in a closed container for 24 hours, carry out steel mold pressing;

[0025] 3) Sintering: Put the compacted body into a vacuum furnace at 700°C for sintering, keep it warm for 4 hours, and cool it down to room temperature naturally under vacuum conditions.

[0026] The ceramic target prepared in this example has a density of 97.71% of the theoretical density, a sintering linear shrinkage rate of 19.58%, an apparent porosity of 0.19%, a Shore hardness of 72HS, and a surface resistivity ...

Embodiment 3

[0028] A cadmium sulfide ceramic target, the preparation method of which specifically comprises the following steps:

[0029] 1) Mixing: Add 0.5g of cadmium chloride into 30mL of hot water and stir to dissolve it, then evenly spray its aqueous solution on 99.5g of cadmium sulfide powder (powder particle size is 50-100μm), mix and stir evenly;

[0030] 2) Molding: Put the obtained mixture in a drying oven, dry at 50°C for 5 hours, and select 30-60 mesh particles through sieving; then, after aging in a closed container for 24 hours, carry out steel mold pressing;

[0031] 3) Sintering: Put the compacted green body into a 900°C vacuum furnace for sintering, keep it warm for 4 hours, and cool it down to room temperature naturally under vacuum conditions.

[0032] The density of the ceramic target prepared in this example reaches 95.41% of the theoretical density, the sintering linear shrinkage rate is 20%, the apparent porosity is 0.46%, the Shore hardness is 66HS, and the surface...

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Abstract

The invention discloses a CdS (cadmium sulfide) ceramic target material and a preparation method thereof, and belongs to the field of solar photoelectric materials. A CdS thin film is an important thin film material of a thin-film solar battery, and the CdS ceramic target material is a precursor material used during thin film preparation with a magnetron sputtering method. According to the CdS ceramic target material and the preparation method, CdS is taken as a fluxing agent, and the CdS ceramic target material is obtained through mixing, forming and sintering and has good characteristics of high density, low resistivity, good stability, complete crystal and uniform crystal grain morphology, shape and size. According to the method, the procedure is simple, the operation is convenient, and a good condition is created for preparing the high-quality CdS thin film for a solar battery.

Description

technical field [0001] The invention belongs to the field of solar photoelectric materials, and in particular relates to a cadmium sulfide ceramic target material and a preparation method thereof. Background technique [0002] Cadmium sulfide (CdS) belongs to Ⅱ-Ⅳ group compounds, wide bandgap direct transition semiconductor, the bandgap width at room temperature is 2.42eV, it is an ideal material for the development of optoelectronic technology, mainly used to manufacture photocells and photoresistors, used in Photoresistors for automatic exposure of cameras, photoelectric control of electromechanical equipment, photoelectric coupling, photoelectric detection, light-controlled toys, and light-controlled lighting. [0003] CdS has two structures, cubic and hexagonal, the cubic structure is stable at low temperature, and the hexagonal structure is stable at high temperature. CdS is often used as the transition layer and window layer of copper indium gallium selenide and cadmi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06C04B35/63C04B35/547
CPCC23C14/0629C23C14/3414
Inventor 吴任平董雪振
Owner FUZHOU UNIV