Nanometer silicon film cathode and manufacturing method thereof

A nano-silicon thin film and a manufacturing method technology are applied in cold cathode manufacturing, discharge tube cold cathode, electrode system manufacturing and other directions, which can solve the problem of poor electron emission stability of porous silicon cathode, unstable mechanical and chemical properties, and unfavorable long-term use. devices, etc., to achieve the effects of good electron emission stability, favorable electron acceleration, and high electron emission density

Inactive Publication Date: 2015-02-18
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] (1) The electron emission stability of the porous silicon cathode is poor, and the mechanical and chemical properties are unstable, which is not conducive to the preparation of devices for long-term use

Method used

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  • Nanometer silicon film cathode and manufacturing method thereof
  • Nanometer silicon film cathode and manufacturing method thereof
  • Nanometer silicon film cathode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0064] Example 1:

[0065] Reference figure 1 As shown, the nano-silicon film cathode has a multilayer structure, including a bottom electrode 1, a silicon dioxide layer 2 containing nanocrystalline silicon (composed of nanocrystalline silicon 22 and silicon dioxide 21) and a top electrode sequentially arranged on a substrate 4 3.

[0066] The manufacturing method of the nano-silicon film cathode includes the following steps:

[0067] 1) Using a sputtering nickel target to deposit the bottom electrode 1 on the substrate 4 with a thickness of 200 nm;

[0068] 2) Pour argon and oxygen into the coating chamber so that the partial pressure ratio of argon to oxygen is 5:1 while controlling the total pressure in the coating chamber to 0.2Pa, and the temperature of the substrate 4 at 500°C. The silicon target is used as the sputtering source and SiO with a thickness of 500nm is deposited on the bottom electrode 1 with a sputtering power of 160W x Thin film; then, the SiO x The film is annea...

Example Embodiment

[0070] Example 2:

[0071] Reference figure 2 As shown, the nano-silicon film cathode has a multilayer structure, including a bottom electrode 1, a silicon dioxide layer 2 containing nanocrystalline silicon (composed of nanocrystalline silicon 22 and silicon dioxide 21) and a top electrode sequentially arranged on a substrate 4 3.

[0072] The manufacturing method of the nano-silicon film cathode includes the following steps:

[0073] 1) A sputtering aluminum target is used to deposit the bottom electrode 1 on the substrate 4 with a thickness of 50 nm;

[0074] 2) Depositing SiO with a silicon target as a sputtering source x During the filming process, argon and oxygen are introduced into the coating chamber, the total pressure in the coating chamber is controlled at 0.5Pa, the temperature of the substrate 4 is controlled at 200°C, and the sputtering power of the silicon target is 150W, which is adjusted by time The flow rate of argon gas and oxygen gas makes the coating process alt...

Example Embodiment

[0076] Example 3:

[0077] Reference figure 2 As shown, the nano-silicon film cathode has a multilayer structure, including a bottom electrode 1, a silicon dioxide layer 2 containing nanocrystalline silicon (composed of nanocrystalline silicon 22 and silicon dioxide 21) and a top electrode sequentially arranged on a substrate 4 3.

[0078] The manufacturing method of the nano-silicon film cathode includes the following steps:

[0079] 1) Using a sputtering chromium target to deposit the bottom electrode 1 on the substrate 4, the thickness of which is 300nm;

[0080] 2) Depositing SiO with a silicon target as a sputtering source x During the filming process, argon and oxygen are introduced into the coating chamber, the total pressure in the coating chamber is controlled at 1.0 Pa, the partial pressure ratio of argon to oxygen is 3:1, and the temperature of the substrate 4 is controlled at 350°C. By adjusting the sputtering power of the silicon target in time intervals, the coating is...

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Abstract

The invention discloses a nanometer silicon film cathode and a manufacturing method thereof. The nanometer silicon film cathode consists of a bottom electrode, a nanocrystalline silicon-containing silicon dioxide layer (nanocrystalline silicon particles are embedded into silicon dioxide) and a top electrode, which are sequentially manufactured on a substrate, wherein the nanocrystalline silicon-containing silicon dioxide layer is prepared by combining a sputtering method with a high-temperature annealing process. In a preparation process of the nanocrystalline silicon-containing silicon dioxide layer, the partial pressure ratio of argon and oxygen, which are introduced into a coating cavity, or the sputtering power of a silicon target and a silicon dioxide target is regulated to control the sizes and density distribution of the nanocrystalline silicon particles in the nanocrystalline silicon-containing silicon dioxide layer to realize the periodically changing layered distribution of the density of the nanocrystalline silicon particles with proper particle sizes in the nanocrystalline silicon-containing silicon dioxide layer. A manufacturing process for the nanometer silicon film cathode is compatible with a silicon microelectronic processing process, and stable electron emission performance is achieved.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials and devices, and in particular relates to a nano silicon thin film cathode and a manufacturing method thereof. Background technique [0002] There are many types of cold cathodes, including Spindt type, silicon microtip type, carbon nanotube type, diamond film type, diamond-like film type, porous silicon type and surface conduction electron emission type, metal-insulator (oxide)-metal type and metal-insulator (oxide)-semiconductor-metal type, etc. In order to obtain good electron emission, the cathode material should meet the following basic requirements: low work function, low electron emission turn-on voltage; high and uniform emission current density; high conductivity and melting point; stable surface physical and chemical properties; The material is economical and practical, low in cost and easy to process. [0003] Among many cathode materials, the processing of silicon ma...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/14C23C14/10H01J1/30H01J9/02
Inventor 胡文波赵晓磊樊金龙吴胜利张劲涛
Owner XI AN JIAOTONG UNIV
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