Nanostructure tungsten-zirconium carbide alloy and preparation method thereof
A nanostructure, zirconium carbide technology, applied in the field of material science, can solve the problems of brittle fracture, reduced strength of pure tungsten, and reduced toughness of tungsten, and achieve high-temperature strength and toughness, high-temperature stability, mechanical properties and high-temperature stability Good performance, the effect of improving strength and high temperature performance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0037] Example 1
[0038] The specific steps of preparation are:
[0039] Step 1. According to the weight percentage of 99.8wt%: 0.2wt%, the metal tungsten powder and the zirconium carbide powder are ball-milled and mixed uniformly in an argon atmosphere to obtain a mixture; wherein the particle size of the metal tungsten powder is 0.2μm, the particle size of zirconium carbide powder is 10nm.
[0040] Step 2: First press the mixture under a pressure of 300 MPa to form a green body, and then place the green body in a hydrogen atmosphere (or a vacuum with a vacuum degree of ≤ 10 Pa) and sinter it at 1500°C.
[0041] Step 2 can also adopt a direct hot pressing process, which is specifically as follows:
[0042] The mixture is placed in a hydrogen atmosphere (or a vacuum with a vacuum degree of ≤10Pa), and hot isostatic pressing is sintered at a pressure of 100MPa and a temperature of 1500°C.
[0043] Alternatively, the mixture is placed in a hydrogen atmosphere (or a vacuum with a vacuum ...
Example Embodiment
[0048] Example 2
[0049] The specific steps of preparation are:
[0050] Step 1. According to the weight percentage of 98.5wt%: 1.5wt%, the metal tungsten powder and zirconium carbide powder are ball-milled and mixed uniformly in alcohol; wherein the particle size of the metal tungsten powder is 0.6μm, and the zirconium carbide powder The body has a particle size of 50 nm and is ball-milled and mixed in an argon atmosphere to obtain a mixture.
[0051] Step 2: First press the mixture under a pressure of 300 MPa to form a green body, then place the green body in a hydrogen atmosphere or a vacuum, and sinter it at 1675°C;
[0052] Step 2 can also adopt a direct hot pressing process, which is specifically as follows:
[0053] Place the mixture in a hydrogen atmosphere or a vacuum atmosphere, and heat isostatically press at a pressure of 130MPa and a temperature of 1625°C to form a hot isostatic pressing;
[0054] Alternatively, the mixture is placed in a hydrogen atmosphere or a vacuum a...
Example Embodiment
[0055] Example 3
[0056] The specific steps of preparation are:
[0057] Step 1. According to the weight percentage of 99.00wt%: 1.0wt%, the metal tungsten powder and zirconium carbide powder are uniformly mixed in a nitrogen atmosphere with a mixer to obtain a mixture; wherein the particle size of the metal tungsten powder is 1μm, the particle size of zirconium carbide powder is 100nm.
[0058] Step 2: First press the mixture under a pressure of 400 MPa to form a green body, then place the green body in a hydrogen atmosphere and sinter it at 2300°C;
[0059] Step 2 can also adopt a direct hot pressing process, which is specifically as follows:
[0060] Place the mixture in an argon atmosphere and heat isostatic pressing at a pressure of 150MPa and a temperature of 2000°C to form a hot isostatic pressing;
[0061] Alternatively, the mixture is placed in an argon atmosphere or vacuum, and formed by spark plasma sintering at a pressure of 50 MPa and a temperature of 1750°C.
PUM
Property | Measurement | Unit |
---|---|---|
Particle size | aaaaa | aaaaa |
Particle size | aaaaa | aaaaa |
Tensile strength | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap