Visible light responsive nitride photocatalytic material and preparation method
A photocatalytic material, nitride light technology, applied in chemical instruments and methods, physical/chemical process catalysts, chemical/physical processes, etc., can solve the problem of low effective utilization of solar energy, reduce direct recombination rate, increase photo Effects of catalytic degradation efficiency and high photoelectric conversion efficiency
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[0033] Below in conjunction with accompanying drawing, the present invention will be further described through embodiment.
[0034] The preparation method of the visible light-responsive nitride photocatalytic material of this embodiment includes the following steps:
[0035]1) Use the MOCVD growth system of Aixtron Company, using trimethylgallium (TMGa), trimethylindium (TMIn), trimethylaluminum (TMAl) as the Group III source, ammonia (NH3) as the V group source, silane ( SiH4) as the n-type dopant source, dimagnesocene (Cp2Mg) as the p-type dopant source, grow a multi-layer PIN heterostructure nitride epitaxial film on the sapphire substrate, including the sapphire substrate 1, buffer layer (10nm ) 2, n-GaN layer (4μm) 3, InGaN (3nm) / GaN (3nm) multiple quantum wells (30 cycles) 4, p-GaN layer (200nm) 5, such as figure 1 shown.
[0036] figure 2 High-angle annular dark field-scanning transmission electron micrograph (HAADF-STEM) shows that the MOCVD-grown InGaN / GaN MQW in...
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