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Method for preparing heterojunction photoelectrode of photoelectrochomical cell through semiconductor nanomaterial recombination

A technology of photoelectrochemical cells and nanomaterials, which is applied in the field of heterojunction photoelectrodes of photoelectrochemical cells prepared by compounding semiconductor nanomaterials, can solve problems such as limiting development, achieve the effects of reducing recombination, improving photoelectric conversion efficiency, and promoting effective separation

Inactive Publication Date: 2015-12-09
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Now the most efficient and common method of hydrogen production is mainly electrolysis of water, but this requires additional energy, which limits its development

Method used

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  • Method for preparing heterojunction photoelectrode of photoelectrochomical cell through semiconductor nanomaterial recombination
  • Method for preparing heterojunction photoelectrode of photoelectrochomical cell through semiconductor nanomaterial recombination

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Experimental program
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Embodiment 1

[0028]Embodiment 1: FTO (fluorine-doped tin oxide) conductive glass was ultrasonically cleaned in alcohol, acetone and deionized water for 15 minutes respectively. Prepare a homogeneously mixed aqueous solution comprising 0.1 mol / L ferric trichloride hexahydrate, 0.1 mol / L urea and 0.1 mol / L ammonium fluoride. Measure 10mL of this solution in a 20mL polytetrafluoroethylene-lined autoclave, put the above-mentioned cleaned conductive glass face down, place it in the autoclave liner at a certain angle, and then heat the autoclave to 120°C, and reacted at this temperature for 6 hours. After the reaction, after cooling to room temperature, the sample was taken out. Finally, the samples were washed in deionized water and alcohol respectively, then dried in air at 80°C for 2 hours, and finally sintered in a muffle furnace at 550°C for 2 hours followed by sintering at 750°C for 15 minutes to obtain the obtained α-Fe 2 o 3 Nanorod array samples. The α-Fe synthesized above 2 o 3 ...

Embodiment 2

[0029] Embodiment 2: FTO (fluorine-doped tin oxide) conductive glass was ultrasonically cleaned in alcohol, acetone and deionized water for 15 minutes respectively. Prepare a homogeneously mixed aqueous solution comprising 0.1 mol / L ferric trichloride hexahydrate, 0.1 mol / L urea and 0.1 mol / L ammonium fluoride. Measure 10mL of this solution in a 20mL polytetrafluoroethylene-lined autoclave, put the above-mentioned cleaned conductive glass face down, place it in the autoclave liner at a certain angle, and then heat the autoclave to 120°C, and reacted at this temperature for 6 hours. After the reaction, after cooling to room temperature, the sample was taken out. Finally, the samples were washed in deionized water and alcohol respectively, then dried in air at 80°C for 2 hours, and finally sintered in a muffle furnace at 550°C for 2 hours followed by sintering at 750°C for 15 minutes to obtain the obtained α-Fe 2 o 3 Nanorod array samples. The α-Fe synthesized above 2 o 3...

Embodiment 3

[0030] Embodiment 3: FTO (fluorine-doped tin oxide) conductive glass was ultrasonically cleaned in alcohol, acetone and deionized water for 15 minutes respectively. Prepare a homogeneously mixed aqueous solution comprising 0.1 mol / L ferric trichloride hexahydrate, 0.1 mol / L urea and 0.1 mol / L ammonium fluoride. Measure 10mL of this solution in a 20mL polytetrafluoroethylene-lined autoclave, put the above-mentioned cleaned conductive glass face down, place it in the autoclave liner at a certain angle, and then heat the autoclave to 120°C, and reacted at this temperature for 6 hours. After the reaction, after cooling to room temperature, the sample was taken out. Finally, the samples were washed in deionized water and alcohol respectively, then dried in air at 80°C for 2 hours, and finally sintered in a muffle furnace at 550°C for 2 hours followed by sintering at 750°C for 15 minutes to obtain the obtained α-Fe 2 o 3 Nanorod array samples. The α-Fe synthesized above 2 o 3...

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Abstract

The invention discloses a method for preparing a heterojunction photoelectrode of a photoelectrochomical cell through semiconductor nanomaterial recombination. A synthetic iron oxide nanorod is compounded with zinc ferrite in a spinel structure to prepare a heterojunction anode. The semiconductor heterojunction photoelectrode built by the method has the effects of promoting effective separation of electron hole pairs, reducing recombination and accelerating charge transportation. According to the electrode, the defect that a single semiconductor carrier is low in migration rate can be overcome; the photoelectric conversion efficiency of the traditional single semiconductor electrode is improved; the water photolysis efficiency is improved; and the method is relatively simple in preparation method, can be produced on a large scale and has potential application value.

Description

technical field [0001] The invention relates to a method for preparing a photoelectrochemical cell electrode, in particular to a method for preparing a heterojunction photoelectrode of a photoelectrochemical cell by compounding semiconductor nanometer materials. Background technique [0002] Hydrogen energy is the best pollution-free green energy, because the product of hydrogen combustion is water, which will not cause any pollution to the environment. The most efficient and common method of hydrogen production is mainly water electrolysis, but this requires extra energy, which limits its development. Solar energy is an inexhaustible and inexhaustible natural resource. The solar energy that shines on the surface of the earth every year is equivalent to 10,000 times the total energy consumption in the world and 1 / 10 of the total fossil energy in the world. Therefore, using solar energy Photolysis of water to produce hydrogen is one of the best ways to utilize solar energy. ...

Claims

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Application Information

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IPC IPC(8): H01M14/00C25B1/04
CPCC25B1/04H01M14/005Y02E60/36Y02P20/133
Inventor 李亮田维刘琼
Owner SUZHOU UNIV
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