Preparation method of sulfur-doped graphene-based super capacitor electrode material

A technology of sulfur-doped graphene and supercapacitor, which is applied in the fields of hybrid capacitor electrodes, hybrid/electric double-layer capacitor manufacturing, metal material coating process, etc. The effect is limited and other problems, to achieve the effect of maintaining cycle stability, easy process control, and increasing specific capacitance value

Inactive Publication Date: 2016-03-02
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the problem that the existing graphene surface modification technology has a limited improvement effect, or the problem that the electronegativity difference between the doping element and the carbon atom is relatively large, and the problem that a covalent bond can be easily formed, and provides a Preparation method of sulfur-doped graphene-based supercapacitor electrode material

Method used

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specific Embodiment approach 1

[0019] Embodiment 1: The preparation method of a kind of sulfur-doped graphene-based supercapacitor electrode material described in this embodiment is specifically carried out according to the following steps:

[0020] 1. Put the collector material in the plasma-enhanced chemical vapor deposition vacuum device, evacuate, feed argon gas, adjust the flow rate of argon gas to 30sccm~60sccm, and adjust the pressure in the plasma-enhanced chemical vapor deposition vacuum device to 200Pa~ 400Pa, and under the pressure of 200Pa~400Pa and argon atmosphere, the temperature is raised to 600℃~800℃ within 20min~60min;

[0021] 2. Introduce hydrogen and methane gas, adjust the flow rate of hydrogen gas to 5sccm-15sccm, adjust the flow rate of methane gas to 10sccm-30sccm, adjust the flow rate of argon gas to 100sccm-200sccm, and adjust the pressure in the plasma-enhanced chemical vapor deposition vacuum device to 500Pa ~1000Pa, and then deposit under the conditions of RF power of 100W~200W...

specific Embodiment approach 2

[0030] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the collector material in step 1 is metal Ni, Pt, Cu or Ni foam. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0031] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is: the dibenzyl disulfide solution described in step 4 is prepared according to the following steps: dibenzyl disulfide is added to In the solvent, ultrasonic vibration is used for 3 minutes to 5 minutes; the solvent is methanol, ethanol, isopropanol or acetone. Others are the same as in the first or second embodiment.

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Abstract

The invention provides a preparation method of a sulfur-doped graphene-based super capacitor electrode material, and relates to a preparation method of an electrode material. The preparation method aims to solve the problem of an existing graphene surface modification technology or an existing limited improvement effect, or the problem that covalent binding can be easily formed because electronegativity of an existing doping element is quite different from electronegativity of a carbon atom. The method comprises adopting methane, an argon gas and a hydrogen gas to prepare a graphene material, coating a graphene surface by using a diebnzyl disulfide solution, placing the coated graphene material into a quartz tube, and performing annealing processing in argon atmosphere. The preparation method is used in preparation of the sulfur-doped graphene-based super capacitor electrode material.

Description

technical field [0001] The invention relates to a preparation method of an electrode material. Background technique [0002] Graphene material is carbon atom sp 2 The two-dimensional conjugated structure material formed after hybridization has good conductivity, stability and high electron mobility, and more importantly, its huge theoretical specific surface area (2675m 2 g -1 ) makes it an ideal electrode material for electric double layer capacitors, and its theoretical specific capacitance value can reach (550Fg -1 ), but the specific capacitance value of the graphene electrode material actually prepared is far less than the theoretical value, except that the defects and stacking of graphene in the preparation process are due to the conductivity of graphene, electron mobility and specific surface area are greatly reduced In addition, the electronic structure of graphene itself is stable, the surface energy is low, and the binding force with water molecules and positive...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/32H01G11/86C23C16/44
CPCY02E60/13H01G11/32C23C16/44H01G11/86
Inventor 亓钧雷刘瑜琳林景煌郭佳乐冯吉才
Owner HARBIN INST OF TECH
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